The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

Helena Ronkainen, Gyözö Drozdy, Sami Franssila

    Research output: Contribution to journalArticle

    9 Citations (Scopus)


    The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.
    Original languageEnglish
    Pages (from-to)125 - 127
    Number of pages3
    JournalIEEE Electron Device Letters
    Issue number3
    Publication statusPublished - 1991
    MoE publication typeA1 Journal article-refereed


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