The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

Helena Ronkainen, Gyözö Drozdy, Sami Franssila

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.
Original languageEnglish
Pages (from-to)125 - 127
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number3
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Cobalt
Nitrides
Fabrication
Field effect transistors
Metallizing
Amorphous silicon
Silicon nitride
Oxides

Cite this

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title = "The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication",
abstract = "The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.",
author = "Helena Ronkainen and Gy{\"o}z{\"o} Drozdy and Sami Franssila",
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doi = "10.1109/55.75732",
language = "English",
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pages = "125 -- 127",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
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The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication. / Ronkainen, Helena; Drozdy, Gyözö; Franssila, Sami.

In: IEEE Electron Device Letters, Vol. 12, No. 3, 1991, p. 125 - 127.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

AU - Ronkainen, Helena

AU - Drozdy, Gyözö

AU - Franssila, Sami

N1 - Project code: puo1020

PY - 1991

Y1 - 1991

N2 - The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.

AB - The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.

U2 - 10.1109/55.75732

DO - 10.1109/55.75732

M3 - Article

VL - 12

SP - 125

EP - 127

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 3

ER -