The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

Helena Ronkainen, Gyözö Drozdy, Sami Franssila

    Research output: Contribution to journalArticleScientificpeer-review

    9 Citations (Scopus)

    Abstract

    The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.
    Original languageEnglish
    Pages (from-to)125 - 127
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume12
    Issue number3
    DOIs
    Publication statusPublished - 1991
    MoE publication typeA1 Journal article-refereed

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    Cobalt
    Nitrides
    Fabrication
    Field effect transistors
    Metallizing
    Amorphous silicon
    Silicon nitride
    Oxides

    Cite this

    @article{ac6d1c12f6ef4898aefda4e62af31dd1,
    title = "The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication",
    abstract = "The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.",
    author = "Helena Ronkainen and Gy{\"o}z{\"o} Drozdy and Sami Franssila",
    note = "Project code: puo1020",
    year = "1991",
    doi = "10.1109/55.75732",
    language = "English",
    volume = "12",
    pages = "125 -- 127",
    journal = "IEEE Electron Device Letters",
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    publisher = "IEEE Institute of Electrical and Electronic Engineers",
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    The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication. / Ronkainen, Helena; Drozdy, Gyözö; Franssila, Sami.

    In: IEEE Electron Device Letters, Vol. 12, No. 3, 1991, p. 125 - 127.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

    AU - Ronkainen, Helena

    AU - Drozdy, Gyözö

    AU - Franssila, Sami

    N1 - Project code: puo1020

    PY - 1991

    Y1 - 1991

    N2 - The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.

    AB - The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.

    U2 - 10.1109/55.75732

    DO - 10.1109/55.75732

    M3 - Article

    VL - 12

    SP - 125

    EP - 127

    JO - IEEE Electron Device Letters

    JF - IEEE Electron Device Letters

    SN - 0741-3106

    IS - 3

    ER -