Abstract
The use of a disposable double spacer of
silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD)
MOSFETs with just two masking steps compared to four in the
conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is
disposed of after it has been used to pattern the nitride. The nitride
acts as a second spacer to block low-energy source/drain (S/D) implants
and to shift LDD implants away from the gate edge. Self-aligned
metallization can be realized using the nitride as silicidation
barrier.
Original language | English |
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Pages (from-to) | 125 - 127 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 12 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1991 |
MoE publication type | A1 Journal article-refereed |