The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

Helena Ronkainen; Gyözö Drozdy; Sami Franssila

doi:10.1109/55.75732

The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

Helena Ronkainen, Gyözö Drozdy, Sami Franssila

Research output: Contribution to journal › Article › Scientific › peer-review

12 Citations (Scopus)

Abstract

The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.

Original language	English
Pages (from-to)	125 - 127
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	3
DOIs	https://doi.org/10.1109/55.75732
Publication status	Published - 1991
MoE publication type	A1 Journal article-refereed

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abstract = "The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.",

author = "Helena Ronkainen and Gy{\"o}z{\"o} Drozdy and Sami Franssila",

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T1 - The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

AU - Ronkainen, Helena

AU - Drozdy, Gyözö

AU - Franssila, Sami

N1 - Project code: puo1020

PY - 1991

Y1 - 1991

N2 - The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.

AB - The use of a disposable double spacer of silicon-nitride/amorphous-silicon to fabricate lightly-doped-drain (LDD) MOSFETs with just two masking steps compared to four in the conventional oxide spacer LDD FET is discussed. The alpha -Si spacer is disposed of after it has been used to pattern the nitride. The nitride acts as a second spacer to block low-energy source/drain (S/D) implants and to shift LDD implants away from the gate edge. Self-aligned metallization can be realized using the nitride as silicidation barrier.

U2 - 10.1109/55.75732

DO - 10.1109/55.75732

M3 - Article

SN - 0741-3106

VL - 12

SP - 125

EP - 127

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

The use of disposable double spacer and self-aligned cobalt silicide for LDD MOSFET fabrication

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