The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process

T. Hochbauer (Corresponding Author), M. Nastasi, R. Verda, A. Misra, Kimmo Henttinen, Ilkka Suni, Arto Nurmela, S. Lau, J. Mayer

Research output: Contribution to journalArticleScientificpeer-review

6 Citations (Scopus)

Abstract

Hydrogen ion implantation in Si has been shown to be an effective means of inducing cleavage in Si and facilitating the transfer of thin slices to other substrates, a process known as ion-cut. In our experiments silicon wafers were implanted with 40 keV protons to a variety of ion doses ranging from 5×1016 to 1×1017 cm−2 and subsequently annealed at 600 °C.
Under all of these conditions ion-cutting in the form of “popping off” discrete blisters was obtained.
The cleavage mechanisms in these samples were studied through the combined use of Rutherford backscattering spectroscopy in channeling mode, elastic recoil detection analysis, and scanning electron microscopy.
Our analyses had shown that the cleavage location in Si is largely controlled by the lattice damage that is generated by the H-implantation process.
At lower H doses, the cut location is well correlated with the damage peak and can be explained by damage-induced in-plane stress and the corresponding out-of-plane strain.
However, at higher implantation doses the ion-cut location shifts to a portion of the crystal which contains lower damage and sufficient concentration of H.
This effect can be explained by the changing fracture mechanics at high H concentrations in heavily damaged Si.
Original languageEnglish
Pages (from-to)592-597
JournalNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume190
Issue number1-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

cleavage
damage
Ions
Ion implantation
dosage
implantation
ions
blisters
plane stress
fracture mechanics
plane strain
Rutherford backscattering spectroscopy
hydrogen ions
Silicon wafers
Fracture mechanics
ion implantation
backscattering
Protons
wafers
Hydrogen

Keywords

  • ion-cut
  • implantation
  • fracture mechanics
  • silicon on insulator

Cite this

Hochbauer, T. ; Nastasi, M. ; Verda, R. ; Misra, A. ; Henttinen, Kimmo ; Suni, Ilkka ; Nurmela, Arto ; Lau, S. ; Mayer, J. / The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process. In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2002 ; Vol. 190, No. 1-4. pp. 592-597.
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abstract = "Hydrogen ion implantation in Si has been shown to be an effective means of inducing cleavage in Si and facilitating the transfer of thin slices to other substrates, a process known as ion-cut. In our experiments silicon wafers were implanted with 40 keV protons to a variety of ion doses ranging from 5×1016 to 1×1017 cm−2 and subsequently annealed at 600 °C. Under all of these conditions ion-cutting in the form of “popping off” discrete blisters was obtained. The cleavage mechanisms in these samples were studied through the combined use of Rutherford backscattering spectroscopy in channeling mode, elastic recoil detection analysis, and scanning electron microscopy. Our analyses had shown that the cleavage location in Si is largely controlled by the lattice damage that is generated by the H-implantation process. At lower H doses, the cut location is well correlated with the damage peak and can be explained by damage-induced in-plane stress and the corresponding out-of-plane strain. However, at higher implantation doses the ion-cut location shifts to a portion of the crystal which contains lower damage and sufficient concentration of H. This effect can be explained by the changing fracture mechanics at high H concentrations in heavily damaged Si.",
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The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process. / Hochbauer, T. (Corresponding Author); Nastasi, M.; Verda, R.; Misra, A.; Henttinen, Kimmo; Suni, Ilkka; Nurmela, Arto; Lau, S.; Mayer, J.

In: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 190, No. 1-4, 2002, p. 592-597.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - The use of ion channeling and elastic recoil detection in determining the mechanism of cleavage in the ion-cut process

AU - Hochbauer, T.

AU - Nastasi, M.

AU - Verda, R.

AU - Misra, A.

AU - Henttinen, Kimmo

AU - Suni, Ilkka

AU - Nurmela, Arto

AU - Lau, S.

AU - Mayer, J.

N1 - Project code: T2SU00141

PY - 2002

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N2 - Hydrogen ion implantation in Si has been shown to be an effective means of inducing cleavage in Si and facilitating the transfer of thin slices to other substrates, a process known as ion-cut. In our experiments silicon wafers were implanted with 40 keV protons to a variety of ion doses ranging from 5×1016 to 1×1017 cm−2 and subsequently annealed at 600 °C. Under all of these conditions ion-cutting in the form of “popping off” discrete blisters was obtained. The cleavage mechanisms in these samples were studied through the combined use of Rutherford backscattering spectroscopy in channeling mode, elastic recoil detection analysis, and scanning electron microscopy. Our analyses had shown that the cleavage location in Si is largely controlled by the lattice damage that is generated by the H-implantation process. At lower H doses, the cut location is well correlated with the damage peak and can be explained by damage-induced in-plane stress and the corresponding out-of-plane strain. However, at higher implantation doses the ion-cut location shifts to a portion of the crystal which contains lower damage and sufficient concentration of H. This effect can be explained by the changing fracture mechanics at high H concentrations in heavily damaged Si.

AB - Hydrogen ion implantation in Si has been shown to be an effective means of inducing cleavage in Si and facilitating the transfer of thin slices to other substrates, a process known as ion-cut. In our experiments silicon wafers were implanted with 40 keV protons to a variety of ion doses ranging from 5×1016 to 1×1017 cm−2 and subsequently annealed at 600 °C. Under all of these conditions ion-cutting in the form of “popping off” discrete blisters was obtained. The cleavage mechanisms in these samples were studied through the combined use of Rutherford backscattering spectroscopy in channeling mode, elastic recoil detection analysis, and scanning electron microscopy. Our analyses had shown that the cleavage location in Si is largely controlled by the lattice damage that is generated by the H-implantation process. At lower H doses, the cut location is well correlated with the damage peak and can be explained by damage-induced in-plane stress and the corresponding out-of-plane strain. However, at higher implantation doses the ion-cut location shifts to a portion of the crystal which contains lower damage and sufficient concentration of H. This effect can be explained by the changing fracture mechanics at high H concentrations in heavily damaged Si.

KW - ion-cut

KW - implantation

KW - fracture mechanics

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JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

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