The vertical IGBT with an implanted buried layer

Simo Eränen; Martti Blomberg

doi:10.1109/ISPSD.1991.146102

The vertical IGBT with an implanted buried layer

Simo Eränen, Martti Blomberg

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

The properties of vertical IGBT (insulated-gate bipolar transistor) test structures with implanted, self-aligned, boron doped buried layers are considered. In the case examined, the buried layers form retrograde p-type regions under the n-type sources of the IGBT. The modifications of the normal IGBT process, which are needed for the fabrication of the buried layers, are described. The process parameters and process steps which are relevant in the context of the buried layers are discussed. Some results from 1-D and 2-D process simulations are shown. Finally, the results of electrical measurements on test IGBTs with several kinds of buried layers and without the buried layers are reported. It is demonstrated that the latch-up current can be dramatically improved with the addition of the buried layer, whereas the forward conduction properties are independent of the buried layers.

Original language	English
Title of host publication	Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs
Editors	Muhammed Ayman Shibib, B. Jayant Baliga
Place of Publication	Piscataway
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	211-214
ISBN (Print)	0-7803-0009-2
DOIs	https://doi.org/10.1109/ISPSD.1991.146102
Publication status	Published - 1991
MoE publication type	A4 Article in a conference publication
Event	International Symposium on Power Semiconductor Devices and ICs. 3 - Baltimore, United States Duration: 22 Apr 1991 → 24 Apr 1991

Conference

Conference	International Symposium on Power Semiconductor Devices and ICs. 3
Country/Territory	United States
City	Baltimore
Period	22/04/91 → 24/04/91

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10.1109/ISPSD.1991.146102

Cite this

@inproceedings{1889573a3e2d4278bea007ea7af4b7a7,

title = "The vertical IGBT with an implanted buried layer",

abstract = "The properties of vertical IGBT (insulated-gate bipolar transistor) test structures with implanted, self-aligned, boron doped buried layers are considered. In the case examined, the buried layers form retrograde p-type regions under the n-type sources of the IGBT. The modifications of the normal IGBT process, which are needed for the fabrication of the buried layers, are described. The process parameters and process steps which are relevant in the context of the buried layers are discussed. Some results from 1-D and 2-D process simulations are shown. Finally, the results of electrical measurements on test IGBTs with several kinds of buried layers and without the buried layers are reported. It is demonstrated that the latch-up current can be dramatically improved with the addition of the buried layer, whereas the forward conduction properties are independent of the buried layers.",

author = "Simo Er{\"a}nen and Martti Blomberg",

note = "Project code: puo7006; International Symposium on Power Semiconductor Devices and ICs. 3 ; Conference date: 22-04-1991 Through 24-04-1991",

year = "1991",

doi = "10.1109/ISPSD.1991.146102",

language = "English",

isbn = "0-7803-0009-2",

pages = "211--214",

editor = "Shibib, {Muhammed Ayman} and Baliga, {B. Jayant}",

booktitle = "Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Eränen, S & Blomberg, M 1991, The vertical IGBT with an implanted buried layer. in MA Shibib & BJ Baliga (eds), Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs. IEEE Institute of Electrical and Electronic Engineers, Piscataway, pp. 211-214, International Symposium on Power Semiconductor Devices and ICs. 3, Baltimore, Maryland, United States, 22/04/91. https://doi.org/10.1109/ISPSD.1991.146102

The vertical IGBT with an implanted buried layer. / Eränen, Simo; Blomberg, Martti.
Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs. ed. / Muhammed Ayman Shibib; B. Jayant Baliga. Piscataway: IEEE Institute of Electrical and Electronic Engineers, 1991. p. 211-214.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - The vertical IGBT with an implanted buried layer

AU - Eränen, Simo

AU - Blomberg, Martti

N1 - Project code: puo7006

PY - 1991

Y1 - 1991

N2 - The properties of vertical IGBT (insulated-gate bipolar transistor) test structures with implanted, self-aligned, boron doped buried layers are considered. In the case examined, the buried layers form retrograde p-type regions under the n-type sources of the IGBT. The modifications of the normal IGBT process, which are needed for the fabrication of the buried layers, are described. The process parameters and process steps which are relevant in the context of the buried layers are discussed. Some results from 1-D and 2-D process simulations are shown. Finally, the results of electrical measurements on test IGBTs with several kinds of buried layers and without the buried layers are reported. It is demonstrated that the latch-up current can be dramatically improved with the addition of the buried layer, whereas the forward conduction properties are independent of the buried layers.

AB - The properties of vertical IGBT (insulated-gate bipolar transistor) test structures with implanted, self-aligned, boron doped buried layers are considered. In the case examined, the buried layers form retrograde p-type regions under the n-type sources of the IGBT. The modifications of the normal IGBT process, which are needed for the fabrication of the buried layers, are described. The process parameters and process steps which are relevant in the context of the buried layers are discussed. Some results from 1-D and 2-D process simulations are shown. Finally, the results of electrical measurements on test IGBTs with several kinds of buried layers and without the buried layers are reported. It is demonstrated that the latch-up current can be dramatically improved with the addition of the buried layer, whereas the forward conduction properties are independent of the buried layers.

U2 - 10.1109/ISPSD.1991.146102

DO - 10.1109/ISPSD.1991.146102

M3 - Conference article in proceedings

SN - 0-7803-0009-2

SP - 211

EP - 214

BT - Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs

A2 - Shibib, Muhammed Ayman

A2 - Baliga, B. Jayant

PB - IEEE Institute of Electrical and Electronic Engineers

CY - Piscataway

T2 - International Symposium on Power Semiconductor Devices and ICs. 3

Y2 - 22 April 1991 through 24 April 1991

ER -

The vertical IGBT with an implanted buried layer

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