Abstract
In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 93-98 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 558 |
| Early online date | 11 Mar 2014 |
| DOIs | |
| Publication status | Published - 2014 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- Atomic layer deposition
- Batch deposition
- Conformal coating
- Plasma-enhanced atomic layer deposition
- Precursors
- Silicon dioxide
Cite this
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Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors. / Putkonen, Matti (Corresponding Author); Bosund, Markus; Ylivaara, Oili M.E.; Puurunen, Riikka L.; Kilpi, Lauri; Ronkainen, Helena; Sintonen, Sakari; Ali, Saima; Lipsanen, Harri; Liu, Xuwen; Haimi, Eero; Hannula, Simo Pekka; Sajavaara, Timo; Buchanan, Iain; Karwacki, Eugene; Vähä-Nissi, Mika.
In: Thin Solid Films, Vol. 558, 2014, p. 93-98.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors
AU - Putkonen, Matti
AU - Bosund, Markus
AU - Ylivaara, Oili M.E.
AU - Puurunen, Riikka L.
AU - Kilpi, Lauri
AU - Ronkainen, Helena
AU - Sintonen, Sakari
AU - Ali, Saima
AU - Lipsanen, Harri
AU - Liu, Xuwen
AU - Haimi, Eero
AU - Hannula, Simo Pekka
AU - Sajavaara, Timo
AU - Buchanan, Iain
AU - Karwacki, Eugene
AU - Vähä-Nissi, Mika
N1 - Project 74717 MECHALD
PY - 2014
Y1 - 2014
N2 - In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.
AB - In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.
KW - Atomic layer deposition
KW - Batch deposition
KW - Conformal coating
KW - Plasma-enhanced atomic layer deposition
KW - Precursors
KW - Silicon dioxide
UR - http://www.scopus.com/inward/record.url?scp=84898808682&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2014.02.087
DO - 10.1016/j.tsf.2014.02.087
M3 - Article
VL - 558
SP - 93
EP - 98
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -