Abstract
In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.
Original language | English |
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Pages (from-to) | 93-98 |
Journal | Thin Solid Films |
Volume | 558 |
Early online date | 11 Mar 2014 |
DOIs | |
Publication status | Published - 2014 |
MoE publication type | A1 Journal article-refereed |
Funding
This work has been partly carried out within the MECHALD project funded by the Finnish Funding Agency for Technology and Innovation (Tekes).
Keywords
- Atomic layer deposition
- Batch deposition
- Conformal coating
- Plasma-enhanced atomic layer deposition
- Precursors
- Silicon dioxide