Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Matti Putkonen (Corresponding Author), Markus Bosund, Oili M.E. Ylivaara, Riikka L. Puurunen, Lauri Kilpi, Helena Ronkainen, Sakari Sintonen, Saima Ali, Harri Lipsanen, Xuwen Liu, Eero Haimi, Simo Pekka Hannula, Timo Sajavaara, Iain Buchanan, Eugene Karwacki, Mika Vähä-Nissi

Research output: Contribution to journalArticleScientificpeer-review

30 Citations (Scopus)

Abstract

In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.

Original languageEnglish
Pages (from-to)93-98
Number of pages6
JournalThin Solid Films
Volume558
Early online date11 Mar 2014
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Fingerprint

Plasma Gases
Atomic layer deposition
Silicon
atomic layer epitaxy
Plasmas
silicon
Deposition rates
Oxidants
Silicon Dioxide
Hydrogen
Nitrogen
Carbon
Silica
Impurities
Substrates
reactivity
wafers
silicon dioxide
nitrogen
impurities

Keywords

  • Atomic layer deposition
  • Batch deposition
  • Conformal coating
  • Plasma-enhanced atomic layer deposition
  • Precursors
  • Silicon dioxide

Cite this

Putkonen, Matti ; Bosund, Markus ; Ylivaara, Oili M.E. ; Puurunen, Riikka L. ; Kilpi, Lauri ; Ronkainen, Helena ; Sintonen, Sakari ; Ali, Saima ; Lipsanen, Harri ; Liu, Xuwen ; Haimi, Eero ; Hannula, Simo Pekka ; Sajavaara, Timo ; Buchanan, Iain ; Karwacki, Eugene ; Vähä-Nissi, Mika. / Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors. In: Thin Solid Films. 2014 ; Vol. 558. pp. 93-98.
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abstract = "In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 {\AA}/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.",
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author = "Matti Putkonen and Markus Bosund and Ylivaara, {Oili M.E.} and Puurunen, {Riikka L.} and Lauri Kilpi and Helena Ronkainen and Sakari Sintonen and Saima Ali and Harri Lipsanen and Xuwen Liu and Eero Haimi and Hannula, {Simo Pekka} and Timo Sajavaara and Iain Buchanan and Eugene Karwacki and Mika V{\"a}h{\"a}-Nissi",
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Putkonen, M, Bosund, M, Ylivaara, OME, Puurunen, RL, Kilpi, L, Ronkainen, H, Sintonen, S, Ali, S, Lipsanen, H, Liu, X, Haimi, E, Hannula, SP, Sajavaara, T, Buchanan, I, Karwacki, E & Vähä-Nissi, M 2014, 'Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors', Thin Solid Films, vol. 558, pp. 93-98. https://doi.org/10.1016/j.tsf.2014.02.087

Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors. / Putkonen, Matti (Corresponding Author); Bosund, Markus; Ylivaara, Oili M.E.; Puurunen, Riikka L.; Kilpi, Lauri; Ronkainen, Helena; Sintonen, Sakari; Ali, Saima; Lipsanen, Harri; Liu, Xuwen; Haimi, Eero; Hannula, Simo Pekka; Sajavaara, Timo; Buchanan, Iain; Karwacki, Eugene; Vähä-Nissi, Mika.

In: Thin Solid Films, Vol. 558, 2014, p. 93-98.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Putkonen, Matti

AU - Bosund, Markus

AU - Ylivaara, Oili M.E.

AU - Puurunen, Riikka L.

AU - Kilpi, Lauri

AU - Ronkainen, Helena

AU - Sintonen, Sakari

AU - Ali, Saima

AU - Lipsanen, Harri

AU - Liu, Xuwen

AU - Haimi, Eero

AU - Hannula, Simo Pekka

AU - Sajavaara, Timo

AU - Buchanan, Iain

AU - Karwacki, Eugene

AU - Vähä-Nissi, Mika

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PY - 2014

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AB - In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.

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KW - Batch deposition

KW - Conformal coating

KW - Plasma-enhanced atomic layer deposition

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M3 - Article

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