Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Matti Putkonen; Markus Bosund; Oili M.E. Ylivaara; Riikka L. Puurunen; Lauri Kilpi; Helena Ronkainen; Sakari Sintonen; Saima Ali; Harri Lipsanen; Xuwen Liu; Eero Haimi; Simo Pekka Hannula; Timo Sajavaara; Iain Buchanan; Eugene Karwacki; Mika Vähä-Nissi

doi:10.1016/j.tsf.2014.02.087

Thermal and plasma enhanced atomic layer deposition of SiO₂ using commercial silicon precursors

Matti Putkonen^*, Markus Bosund, Oili M.E. Ylivaara, Riikka L. Puurunen, Lauri Kilpi, Helena Ronkainen, Sakari Sintonen, Saima Ali, Harri Lipsanen, Xuwen Liu, Eero Haimi, Simo Pekka Hannula, Timo Sajavaara, Iain Buchanan, Eugene Karwacki, Mika Vähä-Nissi

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

69 Citations (Scopus)

Abstract

In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O₃ as oxidant and with substrates measuring 150 × 400 mm. The SiO₂ film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O₂ plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.

Original language	English
Pages (from-to)	93-98
Journal	Thin Solid Films
Volume	558
Early online date	11 Mar 2014
DOIs	https://doi.org/10.1016/j.tsf.2014.02.087
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

Funding

This work has been partly carried out within the MECHALD project funded by the Finnish Funding Agency for Technology and Innovation (Tekes).

Keywords

Atomic layer deposition
Batch deposition
Conformal coating
Plasma-enhanced atomic layer deposition
Precursors
Silicon dioxide

Access to Document

10.1016/j.tsf.2014.02.087

Cite this

Putkonen, M., Bosund, M., Ylivaara, O. M. E., Puurunen, R. L., Kilpi, L., Ronkainen, H., Sintonen, S., Ali, S., Lipsanen, H., Liu, X., Haimi, E., Hannula, S. P., Sajavaara, T., Buchanan, I., Karwacki, E., & Vähä-Nissi, M. (2014). Thermal and plasma enhanced atomic layer deposition of SiO₂ using commercial silicon precursors. Thin Solid Films, 558, 93-98. https://doi.org/10.1016/j.tsf.2014.02.087

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title = "Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors",

abstract = "In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 {\AA}/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.",

keywords = "Atomic layer deposition, Batch deposition, Conformal coating, Plasma-enhanced atomic layer deposition, Precursors, Silicon dioxide",

author = "Matti Putkonen and Markus Bosund and Ylivaara, {Oili M.E.} and Puurunen, {Riikka L.} and Lauri Kilpi and Helena Ronkainen and Sakari Sintonen and Saima Ali and Harri Lipsanen and Xuwen Liu and Eero Haimi and Hannula, {Simo Pekka} and Timo Sajavaara and Iain Buchanan and Eugene Karwacki and Mika V{\"a}h{\"a}-Nissi",

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doi = "10.1016/j.tsf.2014.02.087",

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Putkonen, M, Bosund, M, Ylivaara, OME, Puurunen, RL, Kilpi, L , Ronkainen, H, Sintonen, S, Ali, S, Lipsanen, H, Liu, X, Haimi, E, Hannula, SP, Sajavaara, T, Buchanan, I, Karwacki, E & Vähä-Nissi, M 2014, 'Thermal and plasma enhanced atomic layer deposition of SiO₂ using commercial silicon precursors', Thin Solid Films, vol. 558, pp. 93-98. https://doi.org/10.1016/j.tsf.2014.02.087

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AU - Putkonen, Matti

AU - Bosund, Markus

AU - Ylivaara, Oili M.E.

AU - Puurunen, Riikka L.

AU - Kilpi, Lauri

AU - Ronkainen, Helena

AU - Sintonen, Sakari

AU - Ali, Saima

AU - Lipsanen, Harri

AU - Liu, Xuwen

AU - Haimi, Eero

AU - Hannula, Simo Pekka

AU - Sajavaara, Timo

AU - Buchanan, Iain

AU - Karwacki, Eugene

AU - Vähä-Nissi, Mika

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AB - In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.

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KW - Batch deposition

KW - Conformal coating

KW - Plasma-enhanced atomic layer deposition

KW - Precursors

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