Thermal and plasma enhanced atomic layer deposition of SiO2 using commercial silicon precursors

Matti Putkonen (Corresponding Author), Markus Bosund, Oili M.E. Ylivaara, Riikka L. Puurunen, Lauri Kilpi, Helena Ronkainen, Sakari Sintonen, Saima Ali, Harri Lipsanen, Xuwen Liu, Eero Haimi, Simo Pekka Hannula, Timo Sajavaara, Iain Buchanan, Eugene Karwacki, Mika Vähä-Nissi

    Research output: Contribution to journalArticleScientificpeer-review

    62 Citations (Scopus)


    In this paper, we report ALD deposition of silicon dioxide using either thermal or plasma enhanced atomic layer deposition (PEALD). Several aminosilanes with differing structures and reactivity were used as silicon precursors in R&D single wafer ALD tools. One of the precursors was also tested on pilot scale batch ALD using O3 as oxidant and with substrates measuring 150 × 400 mm. The SiO2 film deposition rate was greatly dependent on the precursors used, highest values being 1.5-2.0 Å/cycle at 30-200°C for one precursor with an O2 plasma. According to time-of-flight-elastic recoil detection analysis measurements carbon and nitrogen impurities were relatively low, but hydrogen content increased at low deposition temperatures.

    Original languageEnglish
    Pages (from-to)93-98
    Number of pages6
    JournalThin Solid Films
    Early online date11 Mar 2014
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed


    • Atomic layer deposition
    • Batch deposition
    • Conformal coating
    • Plasma-enhanced atomic layer deposition
    • Precursors
    • Silicon dioxide


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