Thermal annealing effect on 1.3-µm GaInNAs/GaAs quantum well structures capped with dielectric films

H.F. Liu, C.S. Peng, Jari Likonen, J. Konttinen, V.D.S. Dhaka, N. Tkachenko, M. Pessa

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Two kinds of dielectric films, Si3N4 and SiO2, deposited onto the surface of 1.3-μm GaInNAs/GaAs quantum well (QW) structures were studied upon post-growth thermal annealing. The blue-shift in photoluminescence (PL) as a function of annealing time showed distinct dependence on the selection of the dielectric films. It was found that a Si3N4 cap layer inhibits the blue-shift under specific annealing conditions and the blue-shift inhibition effect increases with the thickness of the Si3N4 cap; while a SiO2 cap layer enhances the PL blue-shift. X-ray diffraction (XRD) and secondary-ion-mass-spectrometry (SIMS) indicated that the enhanced blue-shift in PL from the SiO2-capped sample was caused by two factors: interdiffusion of Ga and In atoms across the QW interfaces and the decrease of N-Ga ion density (and hence N) in the QW material. Compared with the SiO2 caps, Si3N4 cap layers can inhibit both of these factors. Time-resolved PL decay measurements at room temperature were performed to study the optical properties of the uncovered and Si3N4-capped samples.
Original languageEnglish
Pages (from-to)267 - 270
Number of pages4
JournalIEE proceedings: Optoelectronics
Volume151
Issue number5
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Fingerprint

Dielectric films
blue shift
caps
Semiconductor quantum wells
Photoluminescence
quantum wells
Annealing
annealing
photoluminescence
Secondary ion mass spectrometry
Optical properties
secondary ion mass spectrometry
X ray diffraction
Atoms
Hot Temperature
Ions
optical properties
decay
room temperature
diffraction

Keywords

  • quantum wells

Cite this

Liu, H.F. ; Peng, C.S. ; Likonen, Jari ; Konttinen, J. ; Dhaka, V.D.S. ; Tkachenko, N. ; Pessa, M. / Thermal annealing effect on 1.3-µm GaInNAs/GaAs quantum well structures capped with dielectric films. In: IEE proceedings: Optoelectronics. 2004 ; Vol. 151, No. 5. pp. 267 - 270.
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title = "Thermal annealing effect on 1.3-µm GaInNAs/GaAs quantum well structures capped with dielectric films",
abstract = "Two kinds of dielectric films, Si3N4 and SiO2, deposited onto the surface of 1.3-μm GaInNAs/GaAs quantum well (QW) structures were studied upon post-growth thermal annealing. The blue-shift in photoluminescence (PL) as a function of annealing time showed distinct dependence on the selection of the dielectric films. It was found that a Si3N4 cap layer inhibits the blue-shift under specific annealing conditions and the blue-shift inhibition effect increases with the thickness of the Si3N4 cap; while a SiO2 cap layer enhances the PL blue-shift. X-ray diffraction (XRD) and secondary-ion-mass-spectrometry (SIMS) indicated that the enhanced blue-shift in PL from the SiO2-capped sample was caused by two factors: interdiffusion of Ga and In atoms across the QW interfaces and the decrease of N-Ga ion density (and hence N) in the QW material. Compared with the SiO2 caps, Si3N4 cap layers can inhibit both of these factors. Time-resolved PL decay measurements at room temperature were performed to study the optical properties of the uncovered and Si3N4-capped samples.",
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Thermal annealing effect on 1.3-µm GaInNAs/GaAs quantum well structures capped with dielectric films. / Liu, H.F.; Peng, C.S.; Likonen, Jari; Konttinen, J.; Dhaka, V.D.S.; Tkachenko, N.; Pessa, M.

In: IEE proceedings: Optoelectronics, Vol. 151, No. 5, 2004, p. 267 - 270.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Thermal annealing effect on 1.3-µm GaInNAs/GaAs quantum well structures capped with dielectric films

AU - Liu, H.F.

AU - Peng, C.S.

AU - Likonen, Jari

AU - Konttinen, J.

AU - Dhaka, V.D.S.

AU - Tkachenko, N.

AU - Pessa, M.

PY - 2004

Y1 - 2004

N2 - Two kinds of dielectric films, Si3N4 and SiO2, deposited onto the surface of 1.3-μm GaInNAs/GaAs quantum well (QW) structures were studied upon post-growth thermal annealing. The blue-shift in photoluminescence (PL) as a function of annealing time showed distinct dependence on the selection of the dielectric films. It was found that a Si3N4 cap layer inhibits the blue-shift under specific annealing conditions and the blue-shift inhibition effect increases with the thickness of the Si3N4 cap; while a SiO2 cap layer enhances the PL blue-shift. X-ray diffraction (XRD) and secondary-ion-mass-spectrometry (SIMS) indicated that the enhanced blue-shift in PL from the SiO2-capped sample was caused by two factors: interdiffusion of Ga and In atoms across the QW interfaces and the decrease of N-Ga ion density (and hence N) in the QW material. Compared with the SiO2 caps, Si3N4 cap layers can inhibit both of these factors. Time-resolved PL decay measurements at room temperature were performed to study the optical properties of the uncovered and Si3N4-capped samples.

AB - Two kinds of dielectric films, Si3N4 and SiO2, deposited onto the surface of 1.3-μm GaInNAs/GaAs quantum well (QW) structures were studied upon post-growth thermal annealing. The blue-shift in photoluminescence (PL) as a function of annealing time showed distinct dependence on the selection of the dielectric films. It was found that a Si3N4 cap layer inhibits the blue-shift under specific annealing conditions and the blue-shift inhibition effect increases with the thickness of the Si3N4 cap; while a SiO2 cap layer enhances the PL blue-shift. X-ray diffraction (XRD) and secondary-ion-mass-spectrometry (SIMS) indicated that the enhanced blue-shift in PL from the SiO2-capped sample was caused by two factors: interdiffusion of Ga and In atoms across the QW interfaces and the decrease of N-Ga ion density (and hence N) in the QW material. Compared with the SiO2 caps, Si3N4 cap layers can inhibit both of these factors. Time-resolved PL decay measurements at room temperature were performed to study the optical properties of the uncovered and Si3N4-capped samples.

KW - quantum wells

U2 - 10.1049/ip-opt:20040941

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SN - 1751-8768

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