Abstract
This paper presents the most common thermal characterisation methods for
semiconductor diodes and discusses why thermal characterisation is important
for the diode reliability assessment. A special case of thermal
characterisation of THz frequency Schottky diodes for MetOp Second Generation
(MetOp-SG) satellite program instruments is covered in more detail. The
benefits of accurate thermal characterisation in this case are explained and
the drawbacks of unknown self-heating are discussed
| Original language | English |
|---|---|
| Title of host publication | Proceedings |
| Subtitle of host publication | XXXIII URSI Convention on Radio Science |
| Place of Publication | Helsinki |
| Publisher | Aalto University |
| Pages | 121-123 |
| ISBN (Print) | 978-952-60-5142-0 |
| Publication status | Published - 2013 |
| MoE publication type | Not Eligible |
| Event | XXXIII URSI Convention on Radio Science - Espoo, Finland Duration: 24 Apr 2013 → 25 Apr 2013 |
Conference
| Conference | XXXIII URSI Convention on Radio Science |
|---|---|
| Country | Finland |
| City | Espoo |
| Period | 24/04/13 → 25/04/13 |
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Cite this
Kiuru, T., Khanal, S., Mallat, J., Räisänen, A., & Närhi, T. (2013). Thermal characterisation as a part of reliability testing of THz schottky diodes. In Proceedings: XXXIII URSI Convention on Radio Science (pp. 121-123). Aalto University. http://www.ursi.fi/2013/data/uploads/b3-1.pdf