Thermal characterisation as a part of reliability testing of THz schottky diodes

Tero Kiuru, S. Khanal, J. Mallat, A. Räisänen, T. Närhi

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    This paper presents the most common thermal characterisation methods for semiconductor diodes and discusses why thermal characterisation is important for the diode reliability assessment. A special case of thermal characterisation of THz frequency Schottky diodes for MetOp Second Generation (MetOp-SG) satellite program instruments is covered in more detail. The benefits of accurate thermal characterisation in this case are explained and the drawbacks of unknown self-heating are discussed
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publicationXXXIII URSI Convention on Radio Science
    Place of PublicationHelsinki
    PublisherAalto University
    Pages121-123
    ISBN (Print)978-952-60-5142-0
    Publication statusPublished - 2013
    MoE publication typeNot Eligible
    EventXXXIII URSI Convention on Radio Science - Espoo, Finland
    Duration: 24 Apr 201325 Apr 2013

    Conference

    ConferenceXXXIII URSI Convention on Radio Science
    CountryFinland
    CityEspoo
    Period24/04/1325/04/13

    Fingerprint

    Diodes
    Testing
    Semiconductor diodes
    Satellites
    Heating
    Hot Temperature

    Cite this

    Kiuru, T., Khanal, S., Mallat, J., Räisänen, A., & Närhi, T. (2013). Thermal characterisation as a part of reliability testing of THz schottky diodes. In Proceedings: XXXIII URSI Convention on Radio Science (pp. 121-123). Helsinki: Aalto University.
    Kiuru, Tero ; Khanal, S. ; Mallat, J. ; Räisänen, A. ; Närhi, T. / Thermal characterisation as a part of reliability testing of THz schottky diodes. Proceedings: XXXIII URSI Convention on Radio Science. Helsinki : Aalto University, 2013. pp. 121-123
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    abstract = "This paper presents the most common thermal characterisation methods for semiconductor diodes and discusses why thermal characterisation is important for the diode reliability assessment. A special case of thermal characterisation of THz frequency Schottky diodes for MetOp Second Generation (MetOp-SG) satellite program instruments is covered in more detail. The benefits of accurate thermal characterisation in this case are explained and the drawbacks of unknown self-heating are discussed",
    author = "Tero Kiuru and S. Khanal and J. Mallat and A. R{\"a}is{\"a}nen and T. N{\"a}rhi",
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    Kiuru, T, Khanal, S, Mallat, J, Räisänen, A & Närhi, T 2013, Thermal characterisation as a part of reliability testing of THz schottky diodes. in Proceedings: XXXIII URSI Convention on Radio Science. Aalto University, Helsinki, pp. 121-123, XXXIII URSI Convention on Radio Science, Espoo, Finland, 24/04/13.

    Thermal characterisation as a part of reliability testing of THz schottky diodes. / Kiuru, Tero; Khanal, S.; Mallat, J.; Räisänen, A.; Närhi, T.

    Proceedings: XXXIII URSI Convention on Radio Science. Helsinki : Aalto University, 2013. p. 121-123.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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    AU - Närhi, T.

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    AB - This paper presents the most common thermal characterisation methods for semiconductor diodes and discusses why thermal characterisation is important for the diode reliability assessment. A special case of thermal characterisation of THz frequency Schottky diodes for MetOp Second Generation (MetOp-SG) satellite program instruments is covered in more detail. The benefits of accurate thermal characterisation in this case are explained and the drawbacks of unknown self-heating are discussed

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    Kiuru T, Khanal S, Mallat J, Räisänen A, Närhi T. Thermal characterisation as a part of reliability testing of THz schottky diodes. In Proceedings: XXXIII URSI Convention on Radio Science. Helsinki: Aalto University. 2013. p. 121-123