Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range

Tero Kiuru, Goutam Chattopadhyay, Theodore J. Reck, Austin J. Minnich, Robert Lin, Erich Schlecht, Jose V. Siles, Choonsup Lee, Imran Mehdi

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.

    Original languageEnglish
    Article number7379011
    Pages (from-to)328-335
    Number of pages8
    JournalIEEE Transactions on Terahertz Science and Technology
    Volume6
    Issue number2
    DOIs
    Publication statusPublished - 1 Mar 2016
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    multipliers
    membranes
    Membranes
    Substrates
    thermal resistance
    Heat resistance
    Diamonds
    diamonds
    Temperature
    temperature
    frequency multipliers
    Frequency multiplying circuits
    engineers
    Hot Temperature
    Chemical vapor deposition
    Anodes
    anodes
    vapor deposition
    Cooling
    cooling

    Keywords

    • Cryogenic
    • frequency multiplier
    • Schottky diode
    • terahertz (THz)

    Cite this

    Kiuru, Tero ; Chattopadhyay, Goutam ; Reck, Theodore J. ; Minnich, Austin J. ; Lin, Robert ; Schlecht, Erich ; Siles, Jose V. ; Lee, Choonsup ; Mehdi, Imran. / Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range. In: IEEE Transactions on Terahertz Science and Technology. 2016 ; Vol. 6, No. 2. pp. 328-335.
    @article{c436cb28951744d0ad2da9080296314a,
    title = "Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range",
    abstract = "This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.",
    keywords = "Cryogenic, frequency multiplier, Schottky diode, terahertz (THz)",
    author = "Tero Kiuru and Goutam Chattopadhyay and Reck, {Theodore J.} and Minnich, {Austin J.} and Robert Lin and Erich Schlecht and Siles, {Jose V.} and Choonsup Lee and Imran Mehdi",
    year = "2016",
    month = "3",
    day = "1",
    doi = "10.1109/TTHZ.2015.2511746",
    language = "English",
    volume = "6",
    pages = "328--335",
    journal = "IEEE Transactions on Terahertz Science and Technology",
    issn = "2156-342X",
    publisher = "IEEE Institute of Electrical and Electronic Engineers",
    number = "2",

    }

    Kiuru, T, Chattopadhyay, G, Reck, TJ, Minnich, AJ, Lin, R, Schlecht, E, Siles, JV, Lee, C & Mehdi, I 2016, 'Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range', IEEE Transactions on Terahertz Science and Technology, vol. 6, no. 2, 7379011, pp. 328-335. https://doi.org/10.1109/TTHZ.2015.2511746

    Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range. / Kiuru, Tero; Chattopadhyay, Goutam; Reck, Theodore J.; Minnich, Austin J.; Lin, Robert; Schlecht, Erich; Siles, Jose V.; Lee, Choonsup; Mehdi, Imran.

    In: IEEE Transactions on Terahertz Science and Technology, Vol. 6, No. 2, 7379011, 01.03.2016, p. 328-335.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range

    AU - Kiuru, Tero

    AU - Chattopadhyay, Goutam

    AU - Reck, Theodore J.

    AU - Minnich, Austin J.

    AU - Lin, Robert

    AU - Schlecht, Erich

    AU - Siles, Jose V.

    AU - Lee, Choonsup

    AU - Mehdi, Imran

    PY - 2016/3/1

    Y1 - 2016/3/1

    N2 - This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.

    AB - This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.

    KW - Cryogenic

    KW - frequency multiplier

    KW - Schottky diode

    KW - terahertz (THz)

    UR - http://www.scopus.com/inward/record.url?scp=84954107515&partnerID=8YFLogxK

    U2 - 10.1109/TTHZ.2015.2511746

    DO - 10.1109/TTHZ.2015.2511746

    M3 - Article

    AN - SCOPUS:84954107515

    VL - 6

    SP - 328

    EP - 335

    JO - IEEE Transactions on Terahertz Science and Technology

    JF - IEEE Transactions on Terahertz Science and Technology

    SN - 2156-342X

    IS - 2

    M1 - 7379011

    ER -