Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range

Tero Kiuru, Goutam Chattopadhyay, Theodore J. Reck, Austin J. Minnich, Robert Lin, Erich Schlecht, Jose V. Siles, Choonsup Lee, Imran Mehdi

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.

Original languageEnglish
Article number7379011
Pages (from-to)328-335
Number of pages8
JournalIEEE Transactions on Terahertz Science and Technology
Volume6
Issue number2
DOIs
Publication statusPublished - 1 Mar 2016
MoE publication typeA1 Journal article-refereed

Fingerprint

multipliers
membranes
Membranes
Substrates
thermal resistance
Heat resistance
Diamonds
diamonds
Temperature
temperature
frequency multipliers
Frequency multiplying circuits
engineers
Hot Temperature
Chemical vapor deposition
Anodes
anodes
vapor deposition
Cooling
cooling

Keywords

  • Cryogenic
  • frequency multiplier
  • Schottky diode
  • terahertz (THz)

Cite this

Kiuru, Tero ; Chattopadhyay, Goutam ; Reck, Theodore J. ; Minnich, Austin J. ; Lin, Robert ; Schlecht, Erich ; Siles, Jose V. ; Lee, Choonsup ; Mehdi, Imran. / Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range. In: IEEE Transactions on Terahertz Science and Technology. 2016 ; Vol. 6, No. 2. pp. 328-335.
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abstract = "This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.",
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author = "Tero Kiuru and Goutam Chattopadhyay and Reck, {Theodore J.} and Minnich, {Austin J.} and Robert Lin and Erich Schlecht and Siles, {Jose V.} and Choonsup Lee and Imran Mehdi",
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Kiuru, T, Chattopadhyay, G, Reck, TJ, Minnich, AJ, Lin, R, Schlecht, E, Siles, JV, Lee, C & Mehdi, I 2016, 'Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range', IEEE Transactions on Terahertz Science and Technology, vol. 6, no. 2, 7379011, pp. 328-335. https://doi.org/10.1109/TTHZ.2015.2511746

Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range. / Kiuru, Tero; Chattopadhyay, Goutam; Reck, Theodore J.; Minnich, Austin J.; Lin, Robert; Schlecht, Erich; Siles, Jose V.; Lee, Choonsup; Mehdi, Imran.

In: IEEE Transactions on Terahertz Science and Technology, Vol. 6, No. 2, 7379011, 01.03.2016, p. 328-335.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Chattopadhyay, Goutam

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AU - Lin, Robert

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AU - Siles, Jose V.

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AU - Mehdi, Imran

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N2 - This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.

AB - This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.

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