Thermal Characterization of Substrate Options for High-Power THz Multipliers over a Broad Temperature Range

Tero Kiuru, Goutam Chattopadhyay, Theodore J. Reck, Austin J. Minnich, Robert Lin, Erich Schlecht, Jose V. Siles, Choonsup Lee, Imran Mehdi

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)


    This paper presents thermal characterization results for three high-power THz Schottky frequency multipliers in the temperature range of 20-380 K. All measured multipliers have different substrates: a 5-μm-thick GaAs membrane, a 40-μm-thick GaAs substrate, and a 5-μm-thick GaAs membrane glued to a 20-μm-thick CVD diamond substrate with polymer bonding agent. The thermal characterization results include such parameters as the maximum average junction temperature of the anodes, device total thermal resistance, and device cooling (or heating) times. The results enable designers to better optimize their devices for the maximum power level and temperature range and system engineers to better predict the overall performance of the system in an environment, where the ambient conditions might change. For example, from the thermal resistance point of view the GaAs membrane on diamond substrate clearly outperforms the device on GaAs membrane alone at room temperature or above. However, perhaps surprisingly, at temperatures below 125 K, the GaAs membrane is on par, or even has lower thermal resistance than the membrane on diamond.
    Original languageEnglish
    Article number7379011
    Pages (from-to)328-335
    JournalIEEE Transactions on Terahertz Science and Technology
    Issue number2
    Publication statusPublished - 1 Mar 2016
    MoE publication typeA1 Journal article-refereed


    • Cryogenic
    • frequency multiplier
    • Schottky diode
    • terahertz (THz)


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