Thermal characterization of THz schottky diodes using transient current measurements

S Khanal, Tero Kiuru, A-Y Tang, M A Saber, J Mallat, J Stake, T Närhi, A V Räisänen

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 µm2 is within 10% of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper
    Original languageEnglish
    Pages (from-to)267-276
    Number of pages9
    JournalIEEE Transactions on Terahertz Science and Technology
    Volume4
    Issue number2
    DOIs
    Publication statusPublished - 2014
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Electric current measurement
    Schottky diodes
    Diodes
    thermal resistance
    time constant
    anodes
    diodes
    Heat resistance
    varactor diodes
    Anodes
    simulators
    Varactors
    heating
    Hot Temperature
    Simulators
    Heating
    simulation
    temperature

    Keywords

    • Junction temperature
    • Schottky diode
    • thermal impedance
    • thermal parameters
    • thermal resistance
    • thermal time constant
    • transient measurement

    Cite this

    Khanal, S ; Kiuru, Tero ; Tang, A-Y ; Saber, M A ; Mallat, J ; Stake, J ; Närhi, T ; Räisänen, A V. / Thermal characterization of THz schottky diodes using transient current measurements. In: IEEE Transactions on Terahertz Science and Technology. 2014 ; Vol. 4, No. 2. pp. 267-276.
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    abstract = "This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 µm2 is within 10{\%} of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper",
    keywords = "Junction temperature, Schottky diode, thermal impedance, thermal parameters, thermal resistance, thermal time constant, transient measurement",
    author = "S Khanal and Tero Kiuru and A-Y Tang and Saber, {M A} and J Mallat and J Stake and T N{\"a}rhi and R{\"a}is{\"a}nen, {A V}",
    year = "2014",
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    language = "English",
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    Thermal characterization of THz schottky diodes using transient current measurements. / Khanal, S; Kiuru, Tero; Tang, A-Y; Saber, M A; Mallat, J; Stake, J; Närhi, T; Räisänen, A V.

    In: IEEE Transactions on Terahertz Science and Technology, Vol. 4, No. 2, 2014, p. 267-276.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Thermal characterization of THz schottky diodes using transient current measurements

    AU - Khanal, S

    AU - Kiuru, Tero

    AU - Tang, A-Y

    AU - Saber, M A

    AU - Mallat, J

    AU - Stake, J

    AU - Närhi, T

    AU - Räisänen, A V

    PY - 2014

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    N2 - This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 µm2 is within 10% of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper

    AB - This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 µm2 is within 10% of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper

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    KW - Schottky diode

    KW - thermal impedance

    KW - thermal parameters

    KW - thermal resistance

    KW - thermal time constant

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