Thermal characterization of THz schottky diodes using transient current measurements

S Khanal, Tero Kiuru, A-Y Tang, M A Saber, J Mallat, J Stake, T Närhi, A V Räisänen

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 µm2 is within 10% of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper
Original languageEnglish
Pages (from-to)267-276
Number of pages9
JournalIEEE Transactions on Terahertz Science and Technology
Volume4
Issue number2
DOIs
Publication statusPublished - 2014
MoE publication typeA1 Journal article-refereed

Fingerprint

Electric current measurement
Schottky diodes
Diodes
thermal resistance
time constant
anodes
diodes
Heat resistance
varactor diodes
Anodes
simulators
Varactors
heating
Hot Temperature
Simulators
Heating
simulation
temperature

Keywords

  • Junction temperature
  • Schottky diode
  • thermal impedance
  • thermal parameters
  • thermal resistance
  • thermal time constant
  • transient measurement

Cite this

Khanal, S ; Kiuru, Tero ; Tang, A-Y ; Saber, M A ; Mallat, J ; Stake, J ; Närhi, T ; Räisänen, A V. / Thermal characterization of THz schottky diodes using transient current measurements. In: IEEE Transactions on Terahertz Science and Technology. 2014 ; Vol. 4, No. 2. pp. 267-276.
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abstract = "This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 µm2 is within 10{\%} of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper",
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Thermal characterization of THz schottky diodes using transient current measurements. / Khanal, S; Kiuru, Tero; Tang, A-Y; Saber, M A; Mallat, J; Stake, J; Närhi, T; Räisänen, A V.

In: IEEE Transactions on Terahertz Science and Technology, Vol. 4, No. 2, 2014, p. 267-276.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Khanal, S

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AB - This paper presents a new method for thermal characterization of THz Schottky diodes. The method is based on the transient current behavior, and it enables the extraction of thermal resistances, thermal time-constants, and peak junction temperatures of THz Schottky diodes. Many typical challenges in thermal characterization of small-area diode devices, particularly those related to self-heating and electrical transients, are either avoided or mitigated. The method is validated with measurements of commercially available single-anode Schottky varactor diodes. A verification routine is performed to ensure the accuracy of the measurement setup, and the characterization results are compared against an in-house measurement-based method and against simulation results of two commercial 3-D thermal simulators. For example, characterization result for the total thermal resistance of a Schottky diode with an anode area of 9 µm2 is within 10% of the average value of 4020 K/W when using all four approaches. The new method can be used to measure small diode devices with thermal time constants down to about 300 ns with the measurement setup described in the paper

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