Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry

J S Reparaz, E Chavez-Angel, J Gomis-Bresco, M R Wagner, Andrey Shchepetov, Mika Prunnila, Jouni Ahopelto, F Alzina, C M Sotomayor Torres

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality
Original languageEnglish
Title of host publicationProceedings
Subtitle of host publication19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013
PublisherInstitute of Electrical and Electronic Engineers IEEE
Pages95-96
ISBN (Electronic)978-1-4799-2272-7
ISBN (Print)978-1-4799-2271-0
DOIs
Publication statusPublished - 2013
MoE publication typeNot Eligible
Event19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 - Berlin, Germany
Duration: 25 Sep 201327 Sep 2013
Conference number: 19

Conference

Conference19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013
Abbreviated titleTHERMINIC 2013
CountryGermany
CityBerlin
Period25/09/1327/09/13

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temperature measurement
thermal conductivity
membranes
absorptivity
room temperature
scattering
lasers

Cite this

Reparaz, J. S., Chavez-Angel, E., Gomis-Bresco, J., Wagner, M. R., Shchepetov, A., Prunnila, M., ... Sotomayor Torres, C. M. (2013). Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. In Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 (pp. 95-96). Institute of Electrical and Electronic Engineers IEEE. https://doi.org/10.1109/THERMINIC.2013.6675244
Reparaz, J S ; Chavez-Angel, E ; Gomis-Bresco, J ; Wagner, M R ; Shchepetov, Andrey ; Prunnila, Mika ; Ahopelto, Jouni ; Alzina, F ; Sotomayor Torres, C M. / Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. Institute of Electrical and Electronic Engineers IEEE, 2013. pp. 95-96
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abstract = "We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality",
author = "Reparaz, {J S} and E Chavez-Angel and J Gomis-Bresco and Wagner, {M R} and Andrey Shchepetov and Mika Prunnila and Jouni Ahopelto and F Alzina and {Sotomayor Torres}, {C M}",
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Reparaz, JS, Chavez-Angel, E, Gomis-Bresco, J, Wagner, MR, Shchepetov, A, Prunnila, M, Ahopelto, J, Alzina, F & Sotomayor Torres, CM 2013, Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. in Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. Institute of Electrical and Electronic Engineers IEEE, pp. 95-96, 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013, Berlin, Germany, 25/09/13. https://doi.org/10.1109/THERMINIC.2013.6675244

Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. / Reparaz, J S; Chavez-Angel, E; Gomis-Bresco, J; Wagner, M R; Shchepetov, Andrey; Prunnila, Mika; Ahopelto, Jouni; Alzina, F; Sotomayor Torres, C M.

Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. Institute of Electrical and Electronic Engineers IEEE, 2013. p. 95-96.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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AU - Reparaz, J S

AU - Chavez-Angel, E

AU - Gomis-Bresco, J

AU - Wagner, M R

AU - Shchepetov, Andrey

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Alzina, F

AU - Sotomayor Torres, C M

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N2 - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality

AB - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality

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DO - 10.1109/THERMINIC.2013.6675244

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BT - Proceedings

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Reparaz JS, Chavez-Angel E, Gomis-Bresco J, Wagner MR, Shchepetov A, Prunnila M et al. Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. In Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. Institute of Electrical and Electronic Engineers IEEE. 2013. p. 95-96 https://doi.org/10.1109/THERMINIC.2013.6675244