Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry

J.S. Reparaz; E. Chávez-Ángel; J. Gomis-Bresco; M.R. Wagner; Andrey Shchepetov; Mika Prunnila; Jouni Ahopelto; F. Alzina; C.M. Sotomayor Torres

doi:10.1109/THERMINIC.2013.6675244

Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry

J.S. Reparaz, E. Chávez-Ángel, J. Gomis-Bresco, M.R. Wagner, Andrey Shchepetov, Mika Prunnila, Jouni Ahopelto, F. Alzina, C.M. Sotomayor Torres

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality

Original language	English
Title of host publication	19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	95-96
ISBN (Electronic)	978-1-4799-2272-7
ISBN (Print)	978-1-4799-2271-0
DOIs	https://doi.org/10.1109/THERMINIC.2013.6675244
Publication status	Published - 2013
MoE publication type	Not Eligible
Event	19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 - Berlin, Germany Duration: 25 Sept 2013 → 27 Sept 2013 Conference number: 19

Conference

Conference	19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013
Abbreviated title	THERMINIC 2013
Country/Territory	Germany
City	Berlin
Period	25/09/13 → 27/09/13

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10.1109/THERMINIC.2013.6675244

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Reparaz, J. S., Chávez-Ángel, E., Gomis-Bresco, J., Wagner, M. R., Shchepetov, A., Prunnila, M., Ahopelto, J., Alzina, F., & Sotomayor Torres, C. M. (2013). Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. In 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 (pp. 95-96). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/THERMINIC.2013.6675244

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title = "Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry",

abstract = "We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality",

author = "J.S. Reparaz and E. Ch{\'a}vez-{\'A}ngel and J. Gomis-Bresco and M.R. Wagner and Andrey Shchepetov and Mika Prunnila and Jouni Ahopelto and F. Alzina and {Sotomayor Torres}, C.M.",

year = "2013",

doi = "10.1109/THERMINIC.2013.6675244",

language = "English",

isbn = "978-1-4799-2271-0",

pages = "95--96",

booktitle = "19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013, THERMINIC 2013 ; Conference date: 25-09-2013 Through 27-09-2013",

}

Reparaz, JS, Chávez-Ángel, E, Gomis-Bresco, J, Wagner, MR, Shchepetov, A, Prunnila, M , Ahopelto, J, Alzina, F & Sotomayor Torres, CM 2013, Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. in 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. IEEE Institute of Electrical and Electronic Engineers, pp. 95-96, 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013, Berlin, Germany, 25/09/13. https://doi.org/10.1109/THERMINIC.2013.6675244

Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. / Reparaz, J.S.; Chávez-Ángel, E.; Gomis-Bresco, J. et al.
19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. IEEE Institute of Electrical and Electronic Engineers, 2013. p. 95-96.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry

AU - Reparaz, J.S.

AU - Chávez-Ángel, E.

AU - Gomis-Bresco, J.

AU - Wagner, M.R.

AU - Shchepetov, Andrey

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Alzina, F.

AU - Sotomayor Torres, C.M.

N1 - Conference code: 19

PY - 2013

Y1 - 2013

N2 - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality

AB - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality

U2 - 10.1109/THERMINIC.2013.6675244

DO - 10.1109/THERMINIC.2013.6675244

M3 - Conference article in proceedings

SN - 978-1-4799-2271-0

SP - 95

EP - 96

BT - 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013

Y2 - 25 September 2013 through 27 September 2013

ER -

Reparaz JS, Chávez-Ángel E, Gomis-Bresco J, Wagner MR, Shchepetov A, Prunnila M et al. Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. In 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. IEEE Institute of Electrical and Electronic Engineers. 2013. p. 95-96 doi: 10.1109/THERMINIC.2013.6675244

Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry

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