Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry

J S Reparaz, E Chavez-Angel, J Gomis-Bresco, M R Wagner, Andrey Shchepetov, Mika Prunnila, Jouni Ahopelto, F Alzina, C M Sotomayor Torres

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    Abstract

    We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality
    Original languageEnglish
    Title of host publicationProceedings
    Subtitle of host publication19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013
    PublisherIEEE Institute of Electrical and Electronic Engineers
    Pages95-96
    ISBN (Electronic)978-1-4799-2272-7
    ISBN (Print)978-1-4799-2271-0
    DOIs
    Publication statusPublished - 2013
    MoE publication typeNot Eligible
    Event19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 - Berlin, Germany
    Duration: 25 Sep 201327 Sep 2013
    Conference number: 19

    Conference

    Conference19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013
    Abbreviated titleTHERMINIC 2013
    CountryGermany
    CityBerlin
    Period25/09/1327/09/13

    Fingerprint

    temperature measurement
    thermal conductivity
    membranes
    absorptivity
    room temperature
    scattering
    lasers

    Cite this

    Reparaz, J. S., Chavez-Angel, E., Gomis-Bresco, J., Wagner, M. R., Shchepetov, A., Prunnila, M., ... Sotomayor Torres, C. M. (2013). Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. In Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013 (pp. 95-96). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/THERMINIC.2013.6675244
    Reparaz, J S ; Chavez-Angel, E ; Gomis-Bresco, J ; Wagner, M R ; Shchepetov, Andrey ; Prunnila, Mika ; Ahopelto, Jouni ; Alzina, F ; Sotomayor Torres, C M. / Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. IEEE Institute of Electrical and Electronic Engineers , 2013. pp. 95-96
    @inproceedings{cd89bee1f1484cfd945757ee67a23a12,
    title = "Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry",
    abstract = "We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality",
    author = "Reparaz, {J S} and E Chavez-Angel and J Gomis-Bresco and Wagner, {M R} and Andrey Shchepetov and Mika Prunnila and Jouni Ahopelto and F Alzina and {Sotomayor Torres}, {C M}",
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    doi = "10.1109/THERMINIC.2013.6675244",
    language = "English",
    isbn = "978-1-4799-2271-0",
    pages = "95--96",
    booktitle = "Proceedings",
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    Reparaz, JS, Chavez-Angel, E, Gomis-Bresco, J, Wagner, MR, Shchepetov, A, Prunnila, M, Ahopelto, J, Alzina, F & Sotomayor Torres, CM 2013, Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. in Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. IEEE Institute of Electrical and Electronic Engineers , pp. 95-96, 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013, Berlin, Germany, 25/09/13. https://doi.org/10.1109/THERMINIC.2013.6675244

    Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. / Reparaz, J S; Chavez-Angel, E; Gomis-Bresco, J; Wagner, M R; Shchepetov, Andrey; Prunnila, Mika; Ahopelto, Jouni; Alzina, F; Sotomayor Torres, C M.

    Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. IEEE Institute of Electrical and Electronic Engineers , 2013. p. 95-96.

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry

    AU - Reparaz, J S

    AU - Chavez-Angel, E

    AU - Gomis-Bresco, J

    AU - Wagner, M R

    AU - Shchepetov, Andrey

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    AU - Alzina, F

    AU - Sotomayor Torres, C M

    PY - 2013

    Y1 - 2013

    N2 - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality

    AB - We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality at room temperature. A series of membranes with thicknesses ranging from 9 nm to 1.5 µm was investigated using Raman thermometry, a novel contactless optical technique for thermal conductivity determination. The temperature rise of a laser spot focused on the membranes was monitored as a function of the absorbed power. For this purpose, the absorption coefficient of the membranes was experimentally determined and also theoretically modelled. A systematic decrease in the thermal conductivity was observed as reducing the thickness of the membranes which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces of the membranes. The thermal conductivity of the thinnest membrane with d= 9 nm resulted in (9±2)W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality

    U2 - 10.1109/THERMINIC.2013.6675244

    DO - 10.1109/THERMINIC.2013.6675244

    M3 - Conference article in proceedings

    SN - 978-1-4799-2271-0

    SP - 95

    EP - 96

    BT - Proceedings

    PB - IEEE Institute of Electrical and Electronic Engineers

    ER -

    Reparaz JS, Chavez-Angel E, Gomis-Bresco J, Wagner MR, Shchepetov A, Prunnila M et al. Thermal conductivity reduction in Si free-standing membranes investigated using Raman thermometry. In Proceedings: 19th International Workshop on Thermal Investigations of ICs and Systems, THERMINIC 2013. IEEE Institute of Electrical and Electronic Engineers . 2013. p. 95-96 https://doi.org/10.1109/THERMINIC.2013.6675244