Thermal isolation through nanostructuring

D. Leadley, V. Shah, Jouni Ahopelto, Andrey Shchepetov, Mika Prunnila, et al

    Research output: Chapter in Book/Report/Conference proceedingChapter or book articleProfessional

    Abstract

    This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.
    Original languageEnglish
    Title of host publicationBeyond-CMOS Nanodevices 1
    PublisherWiley
    Pages331-363
    ISBN (Print)978-111898477-2, 978-184821654-9
    DOIs
    Publication statusPublished - 2014
    MoE publication typeD2 Article in professional manuals or guides or professional information systems or text book material

    Fingerprint

    isolation
    platforms
    cooling
    heat
    magnetic materials
    coolers
    silicon nitrides
    phonons
    thermal conductivity
    wafers
    membranes
    electrical resistivity
    sensors
    electronics
    temperature

    Keywords

    • crystalline materials;
    • electronic coolers;
    • nanostructured porous Si layers;
    • nanostructuring;
    • thermal conductivity;
    • thermal isolation

    Cite this

    Leadley, D., Shah, V., Ahopelto, J., Shchepetov, A., Prunnila, M., & al, E. (2014). Thermal isolation through nanostructuring. In Beyond-CMOS Nanodevices 1 (pp. 331-363). Wiley. https://doi.org/10.1002/9781118984772.ch12
    Leadley, D. ; Shah, V. ; Ahopelto, Jouni ; Shchepetov, Andrey ; Prunnila, Mika ; al, et. / Thermal isolation through nanostructuring. Beyond-CMOS Nanodevices 1. Wiley, 2014. pp. 331-363
    @inbook{53459e7788414fb8a7d4f8ae0e6e8634,
    title = "Thermal isolation through nanostructuring",
    abstract = "This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.",
    keywords = "crystalline materials;, electronic coolers;, nanostructured porous Si layers;, nanostructuring;, thermal conductivity;, thermal isolation",
    author = "D. Leadley and V. Shah and Jouni Ahopelto and Andrey Shchepetov and Mika Prunnila and et al",
    year = "2014",
    doi = "10.1002/9781118984772.ch12",
    language = "English",
    isbn = "978-111898477-2",
    pages = "331--363",
    booktitle = "Beyond-CMOS Nanodevices 1",
    publisher = "Wiley",
    address = "United States",

    }

    Leadley, D, Shah, V, Ahopelto, J, Shchepetov, A, Prunnila, M & al, E 2014, Thermal isolation through nanostructuring. in Beyond-CMOS Nanodevices 1. Wiley, pp. 331-363. https://doi.org/10.1002/9781118984772.ch12

    Thermal isolation through nanostructuring. / Leadley, D.; Shah, V.; Ahopelto, Jouni; Shchepetov, Andrey; Prunnila, Mika; al, et.

    Beyond-CMOS Nanodevices 1. Wiley, 2014. p. 331-363.

    Research output: Chapter in Book/Report/Conference proceedingChapter or book articleProfessional

    TY - CHAP

    T1 - Thermal isolation through nanostructuring

    AU - Leadley, D.

    AU - Shah, V.

    AU - Ahopelto, Jouni

    AU - Shchepetov, Andrey

    AU - Prunnila, Mika

    AU - al, et

    PY - 2014

    Y1 - 2014

    N2 - This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.

    AB - This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.

    KW - crystalline materials;

    KW - electronic coolers;

    KW - nanostructured porous Si layers;

    KW - nanostructuring;

    KW - thermal conductivity;

    KW - thermal isolation

    U2 - 10.1002/9781118984772.ch12

    DO - 10.1002/9781118984772.ch12

    M3 - Chapter or book article

    SN - 978-111898477-2

    SN - 978-184821654-9

    SP - 331

    EP - 363

    BT - Beyond-CMOS Nanodevices 1

    PB - Wiley

    ER -

    Leadley D, Shah V, Ahopelto J, Shchepetov A, Prunnila M, al E. Thermal isolation through nanostructuring. In Beyond-CMOS Nanodevices 1. Wiley. 2014. p. 331-363 https://doi.org/10.1002/9781118984772.ch12