Thermal isolation through nanostructuring

D. Leadley, V. Shah, Jouni Ahopelto, Andrey Shchepetov, Mika Prunnila, et al

Research output: Chapter in Book/Report/Conference proceedingChapter or book articleProfessional

Abstract

This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.
Original languageEnglish
Title of host publicationBeyond-CMOS Nanodevices 1
PublisherWiley
Pages331-363
ISBN (Print)978-111898477-2, 978-184821654-9
DOIs
Publication statusPublished - 2014
MoE publication typeD2 Article in professional manuals or guides or professional information systems or text book material

Fingerprint

isolation
platforms
cooling
heat
magnetic materials
coolers
silicon nitrides
phonons
thermal conductivity
wafers
membranes
electrical resistivity
sensors
electronics
temperature

Keywords

  • crystalline materials;
  • electronic coolers;
  • nanostructured porous Si layers;
  • nanostructuring;
  • thermal conductivity;
  • thermal isolation

Cite this

Leadley, D., Shah, V., Ahopelto, J., Shchepetov, A., Prunnila, M., & al, E. (2014). Thermal isolation through nanostructuring. In Beyond-CMOS Nanodevices 1 (pp. 331-363). Wiley. https://doi.org/10.1002/9781118984772.ch12
Leadley, D. ; Shah, V. ; Ahopelto, Jouni ; Shchepetov, Andrey ; Prunnila, Mika ; al, et. / Thermal isolation through nanostructuring. Beyond-CMOS Nanodevices 1. Wiley, 2014. pp. 331-363
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Leadley, D, Shah, V, Ahopelto, J, Shchepetov, A, Prunnila, M & al, E 2014, Thermal isolation through nanostructuring. in Beyond-CMOS Nanodevices 1. Wiley, pp. 331-363. https://doi.org/10.1002/9781118984772.ch12

Thermal isolation through nanostructuring. / Leadley, D.; Shah, V.; Ahopelto, Jouni; Shchepetov, Andrey; Prunnila, Mika; al, et.

Beyond-CMOS Nanodevices 1. Wiley, 2014. p. 331-363.

Research output: Chapter in Book/Report/Conference proceedingChapter or book articleProfessional

TY - CHAP

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AU - Shah, V.

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AU - Shchepetov, Andrey

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N2 - This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.

AB - This chapter discusses the cooling of a platform, which requires the electronic coolers to extract heat by coupling to phonons within the platform material. Major results obtained within the nanofunction NoE on the development of nanomodulated magnetic materials and the investigation of their main properties are also presented. The cooling power of the devices becomes paramount, as opposed to the base temperature that could be reached, and must exceed heat leaks into the platform from the surroundings. This indirect cooling is desirable for systems where electrical isolation from the refrigeration elements is required, such as in quantum information applications or superconducting transition edge sensors (TESs). Thick porous Si layers on the Si wafer constitute alternative structures that could replace the rather fragile silicon nitride membranes for use as thermal isolation platforms. The structure and morphology of porous Si determines its electrical and thermal conductivity.

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DO - 10.1002/9781118984772.ch12

M3 - Chapter or book article

SN - 978-111898477-2

SN - 978-184821654-9

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BT - Beyond-CMOS Nanodevices 1

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Leadley D, Shah V, Ahopelto J, Shchepetov A, Prunnila M, al E. Thermal isolation through nanostructuring. In Beyond-CMOS Nanodevices 1. Wiley. 2014. p. 331-363 https://doi.org/10.1002/9781118984772.ch12