Thermal stability and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization scheme

Frank So, Elzbieta Kolawa, Hannu Kattelus, Xin-An Zhao, Marc Nicolet, Chuen-Der Lien

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi2.3 film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min.
Original languageEnglish
Pages (from-to)3078 - 3081
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume4
Issue number6
DOIs
Publication statusPublished - 1986
MoE publication typeNot Eligible

Fingerprint

Metallizing
Thermodynamic stability
thermal stability
Nitrogen
nitrogen
Annealing
annealing
Auger electron spectroscopy
Backscattering
Spectrometry
Auger spectroscopy
electron spectroscopy
affinity
backscattering
Diffraction
Heat treatment
diffraction
spectroscopy
Temperature

Cite this

So, Frank ; Kolawa, Elzbieta ; Kattelus, Hannu ; Zhao, Xin-An ; Nicolet, Marc ; Lien, Chuen-Der. / Thermal stability and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization scheme. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1986 ; Vol. 4, No. 6. pp. 3078 - 3081.
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title = "Thermal stability and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization scheme",
abstract = "Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi2.3 film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min.",
author = "Frank So and Elzbieta Kolawa and Hannu Kattelus and Xin-An Zhao and Marc Nicolet and Chuen-Der Lien",
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Thermal stability and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization scheme. / So, Frank; Kolawa, Elzbieta; Kattelus, Hannu; Zhao, Xin-An; Nicolet, Marc; Lien, Chuen-Der.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 4, No. 6, 1986, p. 3078 - 3081.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Thermal stability and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization scheme

AU - So, Frank

AU - Kolawa, Elzbieta

AU - Kattelus, Hannu

AU - Zhao, Xin-An

AU - Nicolet, Marc

AU - Lien, Chuen-Der

PY - 1986

Y1 - 1986

N2 - Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi2.3 film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min.

AB - Backscattering spectrometry, Auger electron spectroscopy, and x‐ray diffraction have been used to monitor the thin‐film reactions and nitrogen redistribution in the 〈Si〉/Ti/W–N/Al metallization system. It is found that nitrogen in the W–N layer redistributes into Ti after annealing at temperatures above 500 °C. As a consequence of this redistribution of nitrogen, a significant amount of interdiffusion between Al and the underlayers is observed after annealing at 550 °C. This result contrasts markedly with that for the 〈Si〉/W–N/Al system, where no interdiffusion can be detected after the same thermal treatment. We attribute this redistribution of nitrogen to the stronger affinity of Ti for nitrogen than W. If the Ti layer is replaced by a sputtered TiSi2.3 film, no redistribution of nitrogen or reactions can be detected after annealing at 550 °C for 30 min.

U2 - 10.1116/1.573631

DO - 10.1116/1.573631

M3 - Article

VL - 4

SP - 3078

EP - 3081

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 6

ER -