Thermalization arrangement at cryogenic temperatures

Mika Prunnila; Alberto Ronzani; Emma Mykkänen; Antti Kemppinen; Janne Lehtinen

Thermalization arrangement at cryogenic temperatures

Mika Prunnila (Inventor), Alberto Ronzani (Inventor), Emma Mykkänen (Inventor), Antti Kemppinen (Inventor), Janne Lehtinen (Inventor)

Research output: Patent › Patent

Abstract

An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.

Patent familiy as of 18.12.2024

AU2022225660 AA 20230727 AU20220225660 20220218

AU2022225660 AI 20241017 AU20220225660 20220218

CA3208928 AA 20230719 CA20223208928 20220218

EP4298874 A1 20240103 EP20220706338 20220218

EP4373233 A2 20240522 EP20240168258 20220218

EP4373233 A3 20240814 EP20240168258 20220218

FI20215201 A 20220824 FI20210005201 20210223

JP2024506806 T2 20240215 JP20230543417T 20220218

US11800689 BB 20231024 US20220676581 20220221

US2022272869 AA 20220825 US20220676581 20220221

US2024015936 AA 20240111 US20230470777 20230920

WO22180302 A1 20220901 WO2022FI50109 20220218

Original language	English
Patent number	US11800689 B2
Priority date	23/02/21
Publication status	Published - 24 Oct 2023
MoE publication type	Not Eligible

Cite this

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title = "Thermalization arrangement at cryogenic temperatures",

abstract = "An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.Patent familiy as of 18.12.2024AU2022225660 AA 20230727 AU20220225660 20220218AU2022225660 AI 20241017 AU20220225660 20220218CA3208928 AA 20230719 CA20223208928 20220218EP4298874 A1 20240103 EP20220706338 20220218EP4373233 A2 20240522 EP20240168258 20220218EP4373233 A3 20240814 EP20240168258 20220218FI20215201 A 20220824 FI20210005201 20210223JP2024506806 T2 20240215 JP20230543417T 20220218US11800689 BB 20231024 US20220676581 20220221US2022272869 AA 20220825 US20220676581 20220221US2024015936 AA 20240111 US20230470777 20230920WO22180302 A1 20220901 WO2022FI50109 20220218",

author = "Mika Prunnila and Alberto Ronzani and Emma Mykk{\"a}nen and Antti Kemppinen and Janne Lehtinen",

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day = "24",

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type = "Patent",

note = "US11800689 B2",

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AU - Prunnila, Mika

AU - Ronzani, Alberto

AU - Mykkänen, Emma

AU - Kemppinen, Antti

AU - Lehtinen, Janne

PY - 2023/10/24

Y1 - 2023/10/24

N2 - An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.Patent familiy as of 18.12.2024AU2022225660 AA 20230727 AU20220225660 20220218AU2022225660 AI 20241017 AU20220225660 20220218CA3208928 AA 20230719 CA20223208928 20220218EP4298874 A1 20240103 EP20220706338 20220218EP4373233 A2 20240522 EP20240168258 20220218EP4373233 A3 20240814 EP20240168258 20220218FI20215201 A 20220824 FI20210005201 20210223JP2024506806 T2 20240215 JP20230543417T 20220218US11800689 BB 20231024 US20220676581 20220221US2022272869 AA 20220825 US20220676581 20220221US2024015936 AA 20240111 US20230470777 20230920WO22180302 A1 20220901 WO2022FI50109 20220218

AB - An inventive embodiment comprises a thermalization arrangement at cryogenic temperatures. The arrangement comprises a dielectric substrate (2) layer on which substrate a device/s or component/s (1) are positionable. A heat sink component (4) is attached on another side of the substrate. The arrangement further comprises a conductive layer (5) between the substrate layer (2) and the heat sink component (4). A joint between the substrate layer (2) and the conductive layer (5) has minimal thermal boundary resistance. Another joint between the conductive layer (5) and the cooling heat sink layer (4) is electrically conductive.Patent familiy as of 18.12.2024AU2022225660 AA 20230727 AU20220225660 20220218AU2022225660 AI 20241017 AU20220225660 20220218CA3208928 AA 20230719 CA20223208928 20220218EP4298874 A1 20240103 EP20220706338 20220218EP4373233 A2 20240522 EP20240168258 20220218EP4373233 A3 20240814 EP20240168258 20220218FI20215201 A 20220824 FI20210005201 20210223JP2024506806 T2 20240215 JP20230543417T 20220218US11800689 BB 20231024 US20220676581 20220221US2022272869 AA 20220825 US20220676581 20220221US2024015936 AA 20240111 US20230470777 20230920WO22180302 A1 20220901 WO2022FI50109 20220218

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M3 - Patent

M1 - US11800689 B2

ER -

Thermalization arrangement at cryogenic temperatures

Abstract

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