Thermo-optical switching at >100 khz frequency based on 4 and 9 µm thick silicon waveguides

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    Abstract

    This paper describes the design, fabrication and characterisation of fast thermo-optical switches on silicon-on-insulator (SOI) substrates with 4 and 9 µm SOI layer thicknesses. Thinner silicon waveguides provide faster switching and lower power consumption, while 9 µm thick waveguides enable better coupling to standard single-mode (SM) fibers. All devices are based on SM operation. The basic switching element is a Mach-Zehnder interferometer consisting of two successive 2x2 couplers and thin-film metallic heaters in both interferometer arms. Some preliminary results are given also for a compact 3x3 switch matrix on 4 µm SOI.
    Original languageEnglish
    Title of host publicationBook of abstracts. Topical Meeting on Optical Microsystems, OMS'05
    Publication statusPublished - 2005
    MoE publication typeNot Eligible

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    Aalto, T., Harjanne, M., Kapulainen, M., Solehmainen, K., & Heimala, P. (2005). Thermo-optical switching at >100 khz frequency based on 4 and 9 µm thick silicon waveguides. In Book of abstracts. Topical Meeting on Optical Microsystems, OMS'05 [68]