Thermo-optically controlled ring resonator on silicon

Pekka Katila, Päivi Heimala, Jaakko Aarnio

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)

Abstract

A temperature controlled integrated optical ring resonator processed on a silicon substrate is studied using integrated polysilicon heater and thermistor elements. The response speed of the optical 2/spl pi/ phase shift is evaluated as the surface temperature of the device is measured with the thermistor. The effect of an applied heat sink on the device operation is studied.
Original languageEnglish
Pages (from-to)1005-1006
Number of pages2
JournalElectronics Letters
Volume32
Issue number11
DOIs
Publication statusPublished - 1996
MoE publication typeA1 Journal article-refereed

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Thermistors
Resonators
Optical resonators
Silicon
Heat sinks
Polysilicon
Phase shift
Temperature
Substrates

Cite this

Katila, Pekka ; Heimala, Päivi ; Aarnio, Jaakko. / Thermo-optically controlled ring resonator on silicon. In: Electronics Letters. 1996 ; Vol. 32, No. 11. pp. 1005-1006.
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Thermo-optically controlled ring resonator on silicon. / Katila, Pekka; Heimala, Päivi; Aarnio, Jaakko.

In: Electronics Letters, Vol. 32, No. 11, 1996, p. 1005-1006.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Thermo-optically controlled ring resonator on silicon

AU - Katila, Pekka

AU - Heimala, Päivi

AU - Aarnio, Jaakko

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PY - 1996

Y1 - 1996

N2 - A temperature controlled integrated optical ring resonator processed on a silicon substrate is studied using integrated polysilicon heater and thermistor elements. The response speed of the optical 2/spl pi/ phase shift is evaluated as the surface temperature of the device is measured with the thermistor. The effect of an applied heat sink on the device operation is studied.

AB - A temperature controlled integrated optical ring resonator processed on a silicon substrate is studied using integrated polysilicon heater and thermistor elements. The response speed of the optical 2/spl pi/ phase shift is evaluated as the surface temperature of the device is measured with the thermistor. The effect of an applied heat sink on the device operation is studied.

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DO - 10.1049/el:19960640

M3 - Article

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JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

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