Thickness dependent properties of Sr2FeMoO6 thin films grown on SrTiO3 and (LaAlO3) 0.3 (Sr2AlTaO6) 0.7 substrates

I. Angervo; M. Saloaro; H. Palonen; S. Majumdar; H. Huhtinen; P. Paturi

doi:10.1016/j.phpro.2015.12.170

Thickness dependent properties of Sr2FeMoO6 thin films grown on SrTiO3 and (LaAlO3) 0.3 (Sr2AlTaO6) 0.7 substrates

I. Angervo, M. Saloaro (Corresponding Author), H. Palonen, S. Majumdar, H. Huhtinen, P. Paturi

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Abstract

Pure, fully textured and c-axis oriented Sr2FeMoO6 films were deposited on SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates with different thicknesses. A decrease in substrate induced strain was observed in films on SrTiO3 with increasing thickness, but the strain in the films on (LaAlO3)0.3(Sr2AlTaO6)0.7 was nearly constant within the whole film thickness range. Despite the differences in the strain, the magnetic properties of the films showed similar thickness dependence on both substrates. The saturation magnetization and Curie temperature increased until around 150 nm thickness was reached. Semiconducting low temperature upturn in resistivity was observed in all the films and it was enhanced in the thinnest films. Thus, the band gap energy increases with increasing film thickness. According to these results, at least 150 nm thickness is required for high quality Sr2FeMoO6 films.

Original language	English
Pages (from-to)	1011-1021
Number of pages	11
Journal	Physics Procedia
Volume	75
DOIs	https://doi.org/10.1016/j.phpro.2015.12.170
Publication status	Published - 2015
MoE publication type	A4 Article in a conference publication

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10.1016/j.phpro.2015.12.170

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@article{730b96269fbf422b8008d109b12cae5a,

title = "Thickness dependent properties of Sr2FeMoO6 thin films grown on SrTiO3 and (LaAlO3) 0.3 (Sr2AlTaO6) 0.7 substrates",

abstract = "Pure, fully textured and c-axis oriented Sr2FeMoO6 films were deposited on SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates with different thicknesses. A decrease in substrate induced strain was observed in films on SrTiO3 with increasing thickness, but the strain in the films on (LaAlO3)0.3(Sr2AlTaO6)0.7 was nearly constant within the whole film thickness range. Despite the differences in the strain, the magnetic properties of the films showed similar thickness dependence on both substrates. The saturation magnetization and Curie temperature increased until around 150 nm thickness was reached. Semiconducting low temperature upturn in resistivity was observed in all the films and it was enhanced in the thinnest films. Thus, the band gap energy increases with increasing film thickness. According to these results, at least 150 nm thickness is required for high quality Sr2FeMoO6 films.",

author = "I. Angervo and M. Saloaro and H. Palonen and S. Majumdar and H. Huhtinen and P. Paturi",

year = "2015",

doi = "10.1016/j.phpro.2015.12.170",

language = "English",

volume = "75",

pages = "1011--1021",

journal = "Physics Procedia",

issn = "1875-3884",

publisher = "Elsevier",

}

TY - JOUR

T1 - Thickness dependent properties of Sr2FeMoO6 thin films grown on SrTiO3 and (LaAlO3) 0.3 (Sr2AlTaO6) 0.7 substrates

AU - Angervo, I.

AU - Saloaro, M.

AU - Palonen, H.

AU - Majumdar, S.

AU - Huhtinen, H.

AU - Paturi, P.

PY - 2015

Y1 - 2015

N2 - Pure, fully textured and c-axis oriented Sr2FeMoO6 films were deposited on SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates with different thicknesses. A decrease in substrate induced strain was observed in films on SrTiO3 with increasing thickness, but the strain in the films on (LaAlO3)0.3(Sr2AlTaO6)0.7 was nearly constant within the whole film thickness range. Despite the differences in the strain, the magnetic properties of the films showed similar thickness dependence on both substrates. The saturation magnetization and Curie temperature increased until around 150 nm thickness was reached. Semiconducting low temperature upturn in resistivity was observed in all the films and it was enhanced in the thinnest films. Thus, the band gap energy increases with increasing film thickness. According to these results, at least 150 nm thickness is required for high quality Sr2FeMoO6 films.

AB - Pure, fully textured and c-axis oriented Sr2FeMoO6 films were deposited on SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates with different thicknesses. A decrease in substrate induced strain was observed in films on SrTiO3 with increasing thickness, but the strain in the films on (LaAlO3)0.3(Sr2AlTaO6)0.7 was nearly constant within the whole film thickness range. Despite the differences in the strain, the magnetic properties of the films showed similar thickness dependence on both substrates. The saturation magnetization and Curie temperature increased until around 150 nm thickness was reached. Semiconducting low temperature upturn in resistivity was observed in all the films and it was enhanced in the thinnest films. Thus, the band gap energy increases with increasing film thickness. According to these results, at least 150 nm thickness is required for high quality Sr2FeMoO6 films.

U2 - 10.1016/j.phpro.2015.12.170

DO - 10.1016/j.phpro.2015.12.170

M3 - Article in a proceedings journal

SN - 1875-3884

VL - 75

SP - 1011

EP - 1021

JO - Physics Procedia

JF - Physics Procedia

ER -

Thickness dependent properties of Sr2FeMoO6 thin films grown on SrTiO3 and (LaAlO3) 0.3 (Sr2AlTaO6) 0.7 substrates

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