Thin film bulk acoustic wave filter

Markku Ylilammi; Juha Ellä; Jyrki Kaitila; Meeri Partanen

doi:10.1109/58.996574

Thin film bulk acoustic wave filter

Markku Ylilammi, Juha Ellä, Jyrki Kaitila, Meeri Partanen

Nokia Oyj

Research output: Contribution to journal › Article › Scientific › peer-review

50 Citations (Scopus)

Abstract

Thin film bulk acoustic wave (BAW) resonators (FBAR) are fabricated on a silicon nitride bridge using a ZnO piezolayer on a glass substrate and surface micromachining by standard thin film technology. These resonators exhibit a coupling constant k_t² = 7.8% at the first thickness extensional wave mode and are used as impedance elements in a ladder filter in the 1-GHz frequency band of mobile telecommunications. An electrical equivalent circuit is used to characterize the properties of the resonators and to show how the performance of the filter depends on the parameters of the resonators. 2.5% bandwidth, 2.8-dB insertion loss, and 35-dB selectivity are obtained in a filter with six resonators. The technology can be used to manufacture miniature microwave filters without any additional inductances.

Original language	English
Pages (from-to)	535-539
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	49
Issue number	4
DOIs	https://doi.org/10.1109/58.996574
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

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abstract = "Thin film bulk acoustic wave (BAW) resonators (FBAR) are fabricated on a silicon nitride bridge using a ZnO piezolayer on a glass substrate and surface micromachining by standard thin film technology. These resonators exhibit a coupling constant kt2 = 7.8% at the first thickness extensional wave mode and are used as impedance elements in a ladder filter in the 1-GHz frequency band of mobile telecommunications. An electrical equivalent circuit is used to characterize the properties of the resonators and to show how the performance of the filter depends on the parameters of the resonators. 2.5% bandwidth, 2.8-dB insertion loss, and 35-dB selectivity are obtained in a filter with six resonators. The technology can be used to manufacture miniature microwave filters without any additional inductances.",

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AU - Ylilammi, Markku

AU - Ellä, Juha

AU - Kaitila, Jyrki

AU - Partanen, Meeri

N1 - Project code: z1su00087

PY - 2002

Y1 - 2002

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AB - Thin film bulk acoustic wave (BAW) resonators (FBAR) are fabricated on a silicon nitride bridge using a ZnO piezolayer on a glass substrate and surface micromachining by standard thin film technology. These resonators exhibit a coupling constant kt2 = 7.8% at the first thickness extensional wave mode and are used as impedance elements in a ladder filter in the 1-GHz frequency band of mobile telecommunications. An electrical equivalent circuit is used to characterize the properties of the resonators and to show how the performance of the filter depends on the parameters of the resonators. 2.5% bandwidth, 2.8-dB insertion loss, and 35-dB selectivity are obtained in a filter with six resonators. The technology can be used to manufacture miniature microwave filters without any additional inductances.

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JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

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Thin film bulk acoustic wave filter

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