Thin film process for Nb/NbOx/(Pb-In-Au) Josephson junction devices

Jorma Salmi, Jukka Knuutila, Heikki Seppä, Pekka Immonen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

A thin film process for the fabrication of Nb/NbOx/(Pb-In-Au) Josephson junctions has been developed. This process is primarily based on the lift-off of photoresist treated with toluene, ion beam etching of junction areas, d.c. plasma oxidation and thin film vacuum deposition techniques. The device characteristics are described in terms of the processing parameters.

Original languageEnglish
Pages (from-to)77 - 81
Number of pages5
JournalThin Solid Films
Volume126
Issue number1-2
DOIs
Publication statusPublished - 1985
MoE publication typeNot Eligible

Fingerprint

Josephson junction devices
Josephson junctions
Vacuum deposition
Thin films
vacuum deposition
Toluene
Photoresists
thin films
photoresists
Ion beams
toluene
Etching
ion beams
etching
Plasmas
Fabrication
Oxidation
oxidation
fabrication
Processing

Keywords

  • Josephson junction
  • devices

Cite this

Salmi, Jorma ; Knuutila, Jukka ; Seppä, Heikki ; Immonen, Pekka. / Thin film process for Nb/NbOx/(Pb-In-Au) Josephson junction devices. In: Thin Solid Films. 1985 ; Vol. 126, No. 1-2. pp. 77 - 81.
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Thin film process for Nb/NbOx/(Pb-In-Au) Josephson junction devices. / Salmi, Jorma; Knuutila, Jukka; Seppä, Heikki; Immonen, Pekka.

In: Thin Solid Films, Vol. 126, No. 1-2, 1985, p. 77 - 81.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Thin film process for Nb/NbOx/(Pb-In-Au) Josephson junction devices

AU - Salmi, Jorma

AU - Knuutila, Jukka

AU - Seppä, Heikki

AU - Immonen, Pekka

PY - 1985

Y1 - 1985

N2 - A thin film process for the fabrication of Nb/NbOx/(Pb-In-Au) Josephson junctions has been developed. This process is primarily based on the lift-off of photoresist treated with toluene, ion beam etching of junction areas, d.c. plasma oxidation and thin film vacuum deposition techniques. The device characteristics are described in terms of the processing parameters.

AB - A thin film process for the fabrication of Nb/NbOx/(Pb-In-Au) Josephson junctions has been developed. This process is primarily based on the lift-off of photoresist treated with toluene, ion beam etching of junction areas, d.c. plasma oxidation and thin film vacuum deposition techniques. The device characteristics are described in terms of the processing parameters.

KW - Josephson junction

KW - devices

U2 - 10.1016/0040-6090(85)90178-6

DO - 10.1016/0040-6090(85)90178-6

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SP - 77

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JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

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