Thin film process for Nb/NbOx/(Pb-In-Au) Josephson junction devices

Jorma Salmi; Jukka Knuutila; Heikki Seppä; Pekka Immonen

doi:10.1016/0040-6090(85)90178-6

Thin film process for Nb/NbO_x/(Pb-In-Au) Josephson junction devices

Jorma Salmi, Jukka Knuutila, Heikki Seppä, Pekka Immonen

Helsinki University of Technology

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

A thin film process for the fabrication of Nb/NbO_x/(Pb-In-Au) Josephson junctions has been developed. This process is primarily based on the lift-off of photoresist treated with toluene, ion beam etching of junction areas, d.c. plasma oxidation and thin film vacuum deposition techniques. The device characteristics are described in terms of the processing parameters.

Original language	English
Pages (from-to)	77-81
Journal	Thin Solid Films
Volume	126
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(85)90178-6
Publication status	Published - 1985
MoE publication type	A1 Journal article-refereed

Keywords

Josephson junction
devices

Access to Document

10.1016/0040-6090(85)90178-6

Cite this

@article{97e2651b9bd44b4d87734ac426eedcfb,

title = "Thin film process for Nb/NbOx/(Pb-In-Au) Josephson junction devices",

abstract = "A thin film process for the fabrication of Nb/NbOx/(Pb-In-Au) Josephson junctions has been developed. This process is primarily based on the lift-off of photoresist treated with toluene, ion beam etching of junction areas, d.c. plasma oxidation and thin film vacuum deposition techniques. The device characteristics are described in terms of the processing parameters.",

keywords = "Josephson junction, devices",

author = "Jorma Salmi and Jukka Knuutila and Heikki Sepp{\"a} and Pekka Immonen",

year = "1985",

doi = "10.1016/0040-6090(85)90178-6",

language = "English",

volume = "126",

pages = "77--81",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Thin film process for Nb/NbOx/(Pb-In-Au) Josephson junction devices

AU - Salmi, Jorma

AU - Knuutila, Jukka

AU - Seppä, Heikki

AU - Immonen, Pekka

PY - 1985

Y1 - 1985

N2 - A thin film process for the fabrication of Nb/NbOx/(Pb-In-Au) Josephson junctions has been developed. This process is primarily based on the lift-off of photoresist treated with toluene, ion beam etching of junction areas, d.c. plasma oxidation and thin film vacuum deposition techniques. The device characteristics are described in terms of the processing parameters.

AB - A thin film process for the fabrication of Nb/NbOx/(Pb-In-Au) Josephson junctions has been developed. This process is primarily based on the lift-off of photoresist treated with toluene, ion beam etching of junction areas, d.c. plasma oxidation and thin film vacuum deposition techniques. The device characteristics are described in terms of the processing parameters.

KW - Josephson junction

KW - devices

U2 - 10.1016/0040-6090(85)90178-6

DO - 10.1016/0040-6090(85)90178-6

M3 - Article

SN - 0040-6090

VL - 126

SP - 77

EP - 81

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -