Thin multilayer CdS/ZnS films grown by SILAR technique

Mika Valkonen (Corresponding Author), Seppo Lindroos, Tapio Kanniainen, Markku Leskelä, Unto Tapper, Esko Kauppinen

Research output: Contribution to journalArticleScientificpeer-review

46 Citations (Scopus)

Abstract

Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1−xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.

Original languageEnglish
Pages (from-to)58 - 64
Number of pages7
JournalApplied Surface Science
Volume120
Issue number1-2
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

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Zinc sulfide
Cadmium sulfide
Multilayers
Adsorption
ITO glass
Thin films
Scanning electron microscopy
Multilayer films
X ray diffraction analysis
Solid solutions
Annealing
X rays
Glass
Substrates
zinc sulfide
cadmium sulfide
Temperature

Cite this

Valkonen, M., Lindroos, S., Kanniainen, T., Leskelä, M., Tapper, U., & Kauppinen, E. (1997). Thin multilayer CdS/ZnS films grown by SILAR technique. Applied Surface Science, 120(1-2), 58 - 64. https://doi.org/10.1016/S0169-4332(97)00248-1
Valkonen, Mika ; Lindroos, Seppo ; Kanniainen, Tapio ; Leskelä, Markku ; Tapper, Unto ; Kauppinen, Esko. / Thin multilayer CdS/ZnS films grown by SILAR technique. In: Applied Surface Science. 1997 ; Vol. 120, No. 1-2. pp. 58 - 64.
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abstract = "Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1−xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.",
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Valkonen, M, Lindroos, S, Kanniainen, T, Leskelä, M, Tapper, U & Kauppinen, E 1997, 'Thin multilayer CdS/ZnS films grown by SILAR technique', Applied Surface Science, vol. 120, no. 1-2, pp. 58 - 64. https://doi.org/10.1016/S0169-4332(97)00248-1

Thin multilayer CdS/ZnS films grown by SILAR technique. / Valkonen, Mika (Corresponding Author); Lindroos, Seppo; Kanniainen, Tapio; Leskelä, Markku; Tapper, Unto; Kauppinen, Esko.

In: Applied Surface Science, Vol. 120, No. 1-2, 1997, p. 58 - 64.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Thin multilayer CdS/ZnS films grown by SILAR technique

AU - Valkonen, Mika

AU - Lindroos, Seppo

AU - Kanniainen, Tapio

AU - Leskelä, Markku

AU - Tapper, Unto

AU - Kauppinen, Esko

N1 - Project code: K7SU00060

PY - 1997

Y1 - 1997

N2 - Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1−xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.

AB - Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1−xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.

U2 - 10.1016/S0169-4332(97)00248-1

DO - 10.1016/S0169-4332(97)00248-1

M3 - Article

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JF - Applied Surface Science

SN - 0169-4332

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Valkonen M, Lindroos S, Kanniainen T, Leskelä M, Tapper U, Kauppinen E. Thin multilayer CdS/ZnS films grown by SILAR technique. Applied Surface Science. 1997;120(1-2):58 - 64. https://doi.org/10.1016/S0169-4332(97)00248-1