Thin multilayer CdS/ZnS films grown by SILAR technique

Mika Valkonen (Corresponding Author), Seppo Lindroos, Tapio Kanniainen, Markku Leskelä, Unto Tapper, Esko Kauppinen

    Research output: Contribution to journalArticleScientificpeer-review

    46 Citations (Scopus)

    Abstract

    Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1−xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.

    Original languageEnglish
    Pages (from-to)58 - 64
    Number of pages7
    JournalApplied Surface Science
    Volume120
    Issue number1-2
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Zinc sulfide
    Cadmium sulfide
    Multilayers
    Adsorption
    ITO glass
    Thin films
    Scanning electron microscopy
    Multilayer films
    X ray diffraction analysis
    Solid solutions
    Annealing
    X rays
    Glass
    Substrates
    zinc sulfide
    cadmium sulfide
    Temperature

    Cite this

    Valkonen, M., Lindroos, S., Kanniainen, T., Leskelä, M., Tapper, U., & Kauppinen, E. (1997). Thin multilayer CdS/ZnS films grown by SILAR technique. Applied Surface Science, 120(1-2), 58 - 64. https://doi.org/10.1016/S0169-4332(97)00248-1
    Valkonen, Mika ; Lindroos, Seppo ; Kanniainen, Tapio ; Leskelä, Markku ; Tapper, Unto ; Kauppinen, Esko. / Thin multilayer CdS/ZnS films grown by SILAR technique. In: Applied Surface Science. 1997 ; Vol. 120, No. 1-2. pp. 58 - 64.
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    abstract = "Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1−xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.",
    author = "Mika Valkonen and Seppo Lindroos and Tapio Kanniainen and Markku Leskel{\"a} and Unto Tapper and Esko Kauppinen",
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    Valkonen, M, Lindroos, S, Kanniainen, T, Leskelä, M, Tapper, U & Kauppinen, E 1997, 'Thin multilayer CdS/ZnS films grown by SILAR technique', Applied Surface Science, vol. 120, no. 1-2, pp. 58 - 64. https://doi.org/10.1016/S0169-4332(97)00248-1

    Thin multilayer CdS/ZnS films grown by SILAR technique. / Valkonen, Mika (Corresponding Author); Lindroos, Seppo; Kanniainen, Tapio; Leskelä, Markku; Tapper, Unto; Kauppinen, Esko.

    In: Applied Surface Science, Vol. 120, No. 1-2, 1997, p. 58 - 64.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Thin multilayer CdS/ZnS films grown by SILAR technique

    AU - Valkonen, Mika

    AU - Lindroos, Seppo

    AU - Kanniainen, Tapio

    AU - Leskelä, Markku

    AU - Tapper, Unto

    AU - Kauppinen, Esko

    N1 - Project code: K7SU00060

    PY - 1997

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    N2 - Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1−xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.

    AB - Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1–6 nm thick and the amount of layers varied so that the total thickness of 100–120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin CdxZn1−xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.

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    JF - Applied Surface Science

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    Valkonen M, Lindroos S, Kanniainen T, Leskelä M, Tapper U, Kauppinen E. Thin multilayer CdS/ZnS films grown by SILAR technique. Applied Surface Science. 1997;120(1-2):58 - 64. https://doi.org/10.1016/S0169-4332(97)00248-1