Three stage ring oscillator with organic transistors

A.G. Bonea, Tomi Hassinen, P. Svasta

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

The paper aims to address the issues of circuit integration of organic thin film transistors (OTFT) into a ring oscillator module. The stress falls on the optimization of the connections of the inverters in each of the stages of the presented three-stage ring oscillators. The organic transistors, with Bottom Contact Top Gate architecture, are fabricated using commercially available materials and accessible deposition techniques, such as spin-coating and metal evaporation. Two ring oscillators are fabricated with manual and patterned interconnections. The first circuit has a widthlength ratio of 1:10 between the load and drive transistors, while the second structure has a 1:30 ratio. The current-voltage measurements on the individual transistors, as well as the electrical measurements onto inverters and onto the whole circuit, are performed with a Keithley 4200 Semiconductor Analyzer. All measurements are done in accordance with the 1620.1 standard, in air and under normal ceiling fluorescent light illumination. The stability of the individual devices and the overall circuit is proved to remain constant under normal working conditions. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Original languageEnglish
Title of host publicationAdvanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI
EditorsPaul Schiopu
PublisherInternational Society for Optics and Photonics SPIE
Number of pages6
ISBN (Print)978-0-8194-9089-6
DOIs
Publication statusPublished - 2012
MoE publication typeA4 Article in a conference publication
EventAdvanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI - Constanta, Romania
Duration: 23 Aug 201226 Aug 2012

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume8411
ISSN (Print)0277-786X

Conference

ConferenceAdvanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI
CountryRomania
CityConstanta
Period23/08/1226/08/12

Fingerprint

transistors
oscillators
inverters
rings
electrical measurement
ceilings
coating
analyzers
modules
illumination
evaporation
optimization
air
thin films
metals

Keywords

  • organic thin film transistor
  • ring oscillator

Cite this

Bonea, A. G., Hassinen, T., & Svasta, P. (2012). Three stage ring oscillator with organic transistors. In P. Schiopu (Ed.), Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI [841111] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 8411 https://doi.org/10.1117/12.966330
Bonea, A.G. ; Hassinen, Tomi ; Svasta, P. / Three stage ring oscillator with organic transistors. Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI. editor / Paul Schiopu. International Society for Optics and Photonics SPIE, 2012. (Proceedings of SPIE, Vol. 8411).
@inproceedings{3262bdac66564bf2b99be83d4da975ed,
title = "Three stage ring oscillator with organic transistors",
abstract = "The paper aims to address the issues of circuit integration of organic thin film transistors (OTFT) into a ring oscillator module. The stress falls on the optimization of the connections of the inverters in each of the stages of the presented three-stage ring oscillators. The organic transistors, with Bottom Contact Top Gate architecture, are fabricated using commercially available materials and accessible deposition techniques, such as spin-coating and metal evaporation. Two ring oscillators are fabricated with manual and patterned interconnections. The first circuit has a widthlength ratio of 1:10 between the load and drive transistors, while the second structure has a 1:30 ratio. The current-voltage measurements on the individual transistors, as well as the electrical measurements onto inverters and onto the whole circuit, are performed with a Keithley 4200 Semiconductor Analyzer. All measurements are done in accordance with the 1620.1 standard, in air and under normal ceiling fluorescent light illumination. The stability of the individual devices and the overall circuit is proved to remain constant under normal working conditions. {\circledC} (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.",
keywords = "organic thin film transistor, ring oscillator",
author = "A.G. Bonea and Tomi Hassinen and P. Svasta",
year = "2012",
doi = "10.1117/12.966330",
language = "English",
isbn = "978-0-8194-9089-6",
series = "Proceedings of SPIE",
publisher = "International Society for Optics and Photonics SPIE",
editor = "Paul Schiopu",
booktitle = "Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI",
address = "United States",

}

Bonea, AG, Hassinen, T & Svasta, P 2012, Three stage ring oscillator with organic transistors. in P Schiopu (ed.), Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI., 841111, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, Constanta, Romania, 23/08/12. https://doi.org/10.1117/12.966330

Three stage ring oscillator with organic transistors. / Bonea, A.G.; Hassinen, Tomi; Svasta, P.

Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI. ed. / Paul Schiopu. International Society for Optics and Photonics SPIE, 2012. 841111 (Proceedings of SPIE, Vol. 8411).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Three stage ring oscillator with organic transistors

AU - Bonea, A.G.

AU - Hassinen, Tomi

AU - Svasta, P.

PY - 2012

Y1 - 2012

N2 - The paper aims to address the issues of circuit integration of organic thin film transistors (OTFT) into a ring oscillator module. The stress falls on the optimization of the connections of the inverters in each of the stages of the presented three-stage ring oscillators. The organic transistors, with Bottom Contact Top Gate architecture, are fabricated using commercially available materials and accessible deposition techniques, such as spin-coating and metal evaporation. Two ring oscillators are fabricated with manual and patterned interconnections. The first circuit has a widthlength ratio of 1:10 between the load and drive transistors, while the second structure has a 1:30 ratio. The current-voltage measurements on the individual transistors, as well as the electrical measurements onto inverters and onto the whole circuit, are performed with a Keithley 4200 Semiconductor Analyzer. All measurements are done in accordance with the 1620.1 standard, in air and under normal ceiling fluorescent light illumination. The stability of the individual devices and the overall circuit is proved to remain constant under normal working conditions. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

AB - The paper aims to address the issues of circuit integration of organic thin film transistors (OTFT) into a ring oscillator module. The stress falls on the optimization of the connections of the inverters in each of the stages of the presented three-stage ring oscillators. The organic transistors, with Bottom Contact Top Gate architecture, are fabricated using commercially available materials and accessible deposition techniques, such as spin-coating and metal evaporation. Two ring oscillators are fabricated with manual and patterned interconnections. The first circuit has a widthlength ratio of 1:10 between the load and drive transistors, while the second structure has a 1:30 ratio. The current-voltage measurements on the individual transistors, as well as the electrical measurements onto inverters and onto the whole circuit, are performed with a Keithley 4200 Semiconductor Analyzer. All measurements are done in accordance with the 1620.1 standard, in air and under normal ceiling fluorescent light illumination. The stability of the individual devices and the overall circuit is proved to remain constant under normal working conditions. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

KW - organic thin film transistor

KW - ring oscillator

U2 - 10.1117/12.966330

DO - 10.1117/12.966330

M3 - Conference article in proceedings

SN - 978-0-8194-9089-6

T3 - Proceedings of SPIE

BT - Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI

A2 - Schiopu, Paul

PB - International Society for Optics and Photonics SPIE

ER -

Bonea AG, Hassinen T, Svasta P. Three stage ring oscillator with organic transistors. In Schiopu P, editor, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI. International Society for Optics and Photonics SPIE. 2012. 841111. (Proceedings of SPIE, Vol. 8411). https://doi.org/10.1117/12.966330