Three stage ring oscillator with organic transistors

A.G. Bonea, Tomi Hassinen, P. Svasta

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    1 Citation (Scopus)

    Abstract

    The paper aims to address the issues of circuit integration of organic thin film transistors (OTFT) into a ring oscillator module. The stress falls on the optimization of the connections of the inverters in each of the stages of the presented three-stage ring oscillators. The organic transistors, with Bottom Contact Top Gate architecture, are fabricated using commercially available materials and accessible deposition techniques, such as spin-coating and metal evaporation. Two ring oscillators are fabricated with manual and patterned interconnections. The first circuit has a widthlength ratio of 1:10 between the load and drive transistors, while the second structure has a 1:30 ratio. The current-voltage measurements on the individual transistors, as well as the electrical measurements onto inverters and onto the whole circuit, are performed with a Keithley 4200 Semiconductor Analyzer. All measurements are done in accordance with the 1620.1 standard, in air and under normal ceiling fluorescent light illumination. The stability of the individual devices and the overall circuit is proved to remain constant under normal working conditions. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
    Original languageEnglish
    Title of host publicationAdvanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI
    EditorsPaul Schiopu
    PublisherInternational Society for Optics and Photonics SPIE
    Number of pages6
    ISBN (Print)978-0-8194-9089-6
    DOIs
    Publication statusPublished - 2012
    MoE publication typeA4 Article in a conference publication
    EventAdvanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI - Constanta, Romania
    Duration: 23 Aug 201226 Aug 2012

    Publication series

    SeriesProceedings of SPIE
    Volume8411
    ISSN0277-786X

    Conference

    ConferenceAdvanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI
    CountryRomania
    CityConstanta
    Period23/08/1226/08/12

    Fingerprint

    transistors
    oscillators
    inverters
    rings
    electrical measurement
    ceilings
    coating
    analyzers
    modules
    illumination
    evaporation
    optimization
    air
    thin films
    metals

    Keywords

    • organic thin film transistor
    • ring oscillator

    Cite this

    Bonea, A. G., Hassinen, T., & Svasta, P. (2012). Three stage ring oscillator with organic transistors. In P. Schiopu (Ed.), Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI [841111] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 8411 https://doi.org/10.1117/12.966330
    Bonea, A.G. ; Hassinen, Tomi ; Svasta, P. / Three stage ring oscillator with organic transistors. Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI. editor / Paul Schiopu. International Society for Optics and Photonics SPIE, 2012. (Proceedings of SPIE, Vol. 8411).
    @inproceedings{3262bdac66564bf2b99be83d4da975ed,
    title = "Three stage ring oscillator with organic transistors",
    abstract = "The paper aims to address the issues of circuit integration of organic thin film transistors (OTFT) into a ring oscillator module. The stress falls on the optimization of the connections of the inverters in each of the stages of the presented three-stage ring oscillators. The organic transistors, with Bottom Contact Top Gate architecture, are fabricated using commercially available materials and accessible deposition techniques, such as spin-coating and metal evaporation. Two ring oscillators are fabricated with manual and patterned interconnections. The first circuit has a widthlength ratio of 1:10 between the load and drive transistors, while the second structure has a 1:30 ratio. The current-voltage measurements on the individual transistors, as well as the electrical measurements onto inverters and onto the whole circuit, are performed with a Keithley 4200 Semiconductor Analyzer. All measurements are done in accordance with the 1620.1 standard, in air and under normal ceiling fluorescent light illumination. The stability of the individual devices and the overall circuit is proved to remain constant under normal working conditions. {\circledC} (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.",
    keywords = "organic thin film transistor, ring oscillator",
    author = "A.G. Bonea and Tomi Hassinen and P. Svasta",
    year = "2012",
    doi = "10.1117/12.966330",
    language = "English",
    isbn = "978-0-8194-9089-6",
    series = "Proceedings of SPIE",
    publisher = "International Society for Optics and Photonics SPIE",
    editor = "Paul Schiopu",
    booktitle = "Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI",
    address = "United States",

    }

    Bonea, AG, Hassinen, T & Svasta, P 2012, Three stage ring oscillator with organic transistors. in P Schiopu (ed.), Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI., 841111, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 8411, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI, Constanta, Romania, 23/08/12. https://doi.org/10.1117/12.966330

    Three stage ring oscillator with organic transistors. / Bonea, A.G.; Hassinen, Tomi; Svasta, P.

    Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI. ed. / Paul Schiopu. International Society for Optics and Photonics SPIE, 2012. 841111 (Proceedings of SPIE, Vol. 8411).

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    TY - GEN

    T1 - Three stage ring oscillator with organic transistors

    AU - Bonea, A.G.

    AU - Hassinen, Tomi

    AU - Svasta, P.

    PY - 2012

    Y1 - 2012

    N2 - The paper aims to address the issues of circuit integration of organic thin film transistors (OTFT) into a ring oscillator module. The stress falls on the optimization of the connections of the inverters in each of the stages of the presented three-stage ring oscillators. The organic transistors, with Bottom Contact Top Gate architecture, are fabricated using commercially available materials and accessible deposition techniques, such as spin-coating and metal evaporation. Two ring oscillators are fabricated with manual and patterned interconnections. The first circuit has a widthlength ratio of 1:10 between the load and drive transistors, while the second structure has a 1:30 ratio. The current-voltage measurements on the individual transistors, as well as the electrical measurements onto inverters and onto the whole circuit, are performed with a Keithley 4200 Semiconductor Analyzer. All measurements are done in accordance with the 1620.1 standard, in air and under normal ceiling fluorescent light illumination. The stability of the individual devices and the overall circuit is proved to remain constant under normal working conditions. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

    AB - The paper aims to address the issues of circuit integration of organic thin film transistors (OTFT) into a ring oscillator module. The stress falls on the optimization of the connections of the inverters in each of the stages of the presented three-stage ring oscillators. The organic transistors, with Bottom Contact Top Gate architecture, are fabricated using commercially available materials and accessible deposition techniques, such as spin-coating and metal evaporation. Two ring oscillators are fabricated with manual and patterned interconnections. The first circuit has a widthlength ratio of 1:10 between the load and drive transistors, while the second structure has a 1:30 ratio. The current-voltage measurements on the individual transistors, as well as the electrical measurements onto inverters and onto the whole circuit, are performed with a Keithley 4200 Semiconductor Analyzer. All measurements are done in accordance with the 1620.1 standard, in air and under normal ceiling fluorescent light illumination. The stability of the individual devices and the overall circuit is proved to remain constant under normal working conditions. © (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

    KW - organic thin film transistor

    KW - ring oscillator

    U2 - 10.1117/12.966330

    DO - 10.1117/12.966330

    M3 - Conference article in proceedings

    SN - 978-0-8194-9089-6

    T3 - Proceedings of SPIE

    BT - Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI

    A2 - Schiopu, Paul

    PB - International Society for Optics and Photonics SPIE

    ER -

    Bonea AG, Hassinen T, Svasta P. Three stage ring oscillator with organic transistors. In Schiopu P, editor, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VI. International Society for Optics and Photonics SPIE. 2012. 841111. (Proceedings of SPIE, Vol. 8411). https://doi.org/10.1117/12.966330