Through-wafer polysilicon interconnect fabrication with in-situ boron doping

Ismo Luusua, Kimmo Henttinen, Panu Pekko, Tapani Vehmas, Hannu Luoto

    Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

    3 Citations (Scopus)

    Abstract

    Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon material in order to develop fast one-step doping process, without additional diffusion. The via holes can be processed by high-aspect ratio silicon etching with inductively coupled plasma (ICP).
    Original languageEnglish
    Title of host publicationSymposium J - Micro- and Nanosystems - Materials and Devices
    PublisherMaterials Research Society
    Pages77-81
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA4 Article in a conference publication
    Event2005 MRS Spring Meeting, Symposium J: Micro- and Nanosystems - Materials and Devices - San Francisco, United States
    Duration: 28 Mar 20051 Apr 2005

    Publication series

    SeriesMRS Online Proceedings
    Volume872
    ISSN1946-4274

    Conference

    Conference2005 MRS Spring Meeting, Symposium J: Micro- and Nanosystems - Materials and Devices
    CountryUnited States
    CitySan Francisco
    Period28/03/051/04/05

    Keywords

    • through-wafer interconnects
    • bulk micromachining
    • MEMS

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