Through-wafer polysilicon interconnect fabrication with in-situ boron doping

Ismo Luusua; Kimmo Henttinen; Panu Pekko; Tapani Vehmas; Hannu Luoto

doi:10.1557/PROC-872-J5.5

Through-wafer polysilicon interconnect fabrication with in-situ boron doping

Ismo Luusua, Kimmo Henttinen, Panu Pekko, Tapani Vehmas, Hannu Luoto

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

5 Citations (Scopus)

Abstract

Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon material in order to develop fast one-step doping process, without additional diffusion. The via holes can be processed by high-aspect ratio silicon etching with inductively coupled plasma (ICP).

Original language	English
Title of host publication	Symposium J - Micro- and Nanosystems - Materials and Devices
Publisher	Materials Research Society
Pages	77-81
DOIs	https://doi.org/10.1557/PROC-872-J5.5
Publication status	Published - 2005
MoE publication type	A4 Article in a conference publication
Event	2005 MRS Spring Meeting, Symposium J: Micro- and Nanosystems - Materials and Devices - San Francisco, United States Duration: 28 Mar 2005 → 1 Apr 2005

Publication series

Series	MRS Online Proceedings
Volume	872
ISSN	1946-4274

Conference

Conference	2005 MRS Spring Meeting, Symposium J: Micro- and Nanosystems - Materials and Devices
Country/Territory	United States
City	San Francisco
Period	28/03/05 → 1/04/05

Keywords

through-wafer interconnects
bulk micromachining
MEMS

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1557/PROC-872-J5.5

Cite this

@inproceedings{c1cb4ca6dbbb48e584a69cdf4625f20b,

title = "Through-wafer polysilicon interconnect fabrication with in-situ boron doping",

abstract = "Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon material in order to develop fast one-step doping process, without additional diffusion. The via holes can be processed by high-aspect ratio silicon etching with inductively coupled plasma (ICP).",

keywords = "through-wafer interconnects, bulk micromachining, MEMS",

author = "Ismo Luusua and Kimmo Henttinen and Panu Pekko and Tapani Vehmas and Hannu Luoto",

note = "Project code: T5SU00314; 2005 MRS Spring Meeting, Symposium J: Micro- and Nanosystems - Materials and Devices ; Conference date: 28-03-2005 Through 01-04-2005",

year = "2005",

doi = "10.1557/PROC-872-J5.5",

language = "English",

series = "MRS Online Proceedings ",

publisher = "Materials Research Society",

pages = "77--81",

booktitle = "Symposium J - Micro- and Nanosystems - Materials and Devices",

address = "United States",

}

Luusua, I, Henttinen, K, Pekko, P , Vehmas, T & Luoto, H 2005, Through-wafer polysilicon interconnect fabrication with in-situ boron doping. in Symposium J - Micro- and Nanosystems - Materials and Devices., J5.5, Materials Research Society, MRS Online Proceedings , vol. 872, pp. 77-81, 2005 MRS Spring Meeting, Symposium J: Micro- and Nanosystems - Materials and Devices, San Francisco, California, United States, 28/03/05. https://doi.org/10.1557/PROC-872-J5.5

Through-wafer polysilicon interconnect fabrication with in-situ boron doping. / Luusua, Ismo; Henttinen, Kimmo; Pekko, Panu et al.
Symposium J - Micro- and Nanosystems - Materials and Devices. Materials Research Society, 2005. p. 77-81 J5.5 (MRS Online Proceedings , Vol. 872).

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Through-wafer polysilicon interconnect fabrication with in-situ boron doping

AU - Luusua, Ismo

AU - Henttinen, Kimmo

AU - Pekko, Panu

AU - Vehmas, Tapani

AU - Luoto, Hannu

N1 - Project code: T5SU00314

PY - 2005

Y1 - 2005

N2 - Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon material in order to develop fast one-step doping process, without additional diffusion. The via holes can be processed by high-aspect ratio silicon etching with inductively coupled plasma (ICP).

AB - Bulk micromachining technology can be used to produce conducting through-wafer polysilicon interconnects, i.e., polysilicon via plugs. This paper presents the process fabrication steps of polysilicon via plugs with in-situ boron doped polysilicon material in order to develop fast one-step doping process, without additional diffusion. The via holes can be processed by high-aspect ratio silicon etching with inductively coupled plasma (ICP).

KW - through-wafer interconnects

KW - bulk micromachining

KW - MEMS

U2 - 10.1557/PROC-872-J5.5

DO - 10.1557/PROC-872-J5.5

M3 - Conference article in proceedings

T3 - MRS Online Proceedings

SP - 77

EP - 81

BT - Symposium J - Micro- and Nanosystems - Materials and Devices

PB - Materials Research Society

T2 - 2005 MRS Spring Meeting, Symposium J: Micro- and Nanosystems - Materials and Devices

Y2 - 28 March 2005 through 1 April 2005

ER -

Through-wafer polysilicon interconnect fabrication with in-situ boron doping

Abstract

Publication series

Conference

Keywords

UN SDGs

Access to Document

Fingerprint

Cite this