ToF-SIMS 3d analysis of thin films deposited in high aspect ratio structures via atomic layer deposition and chemical vapor deposition

Alireza M. Kia (Corresponding Author), Nora Haufe, Sajjad Esmaeili, Clemens Mart, Mikko Utriainen, Riikka L. Puurunen, Wenke Weinreich

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)

    Abstract

    For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.

    Original languageEnglish
    Article number1035
    JournalNanomaterials
    Volume9
    Issue number7
    DOIs
    Publication statusPublished - Jul 2019
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Atomic layer deposition
    Secondary ion mass spectrometry
    Aspect ratio
    Chemical vapor deposition
    Thin films
    Silicon
    Copper
    Electroplating
    Surface topography
    Cobalt
    Electron microscopy
    Electrolytes
    Seed
    Doping (additives)
    Corrosion
    Semiconductor materials
    Chemical analysis

    Keywords

    • Compositional depth profiling
    • High aspect ratio (HAR) structures
    • Lateral high aspect ratio (LHAR)
    • Silicon doped hafnium oxide (HSO) ALD deposition
    • ToF-SIMS 3D imaging
    • ToF-SIMS analysis

    Cite this

    Kia, Alireza M. ; Haufe, Nora ; Esmaeili, Sajjad ; Mart, Clemens ; Utriainen, Mikko ; Puurunen, Riikka L. ; Weinreich, Wenke. / ToF-SIMS 3d analysis of thin films deposited in high aspect ratio structures via atomic layer deposition and chemical vapor deposition. In: Nanomaterials. 2019 ; Vol. 9, No. 7.
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    ToF-SIMS 3d analysis of thin films deposited in high aspect ratio structures via atomic layer deposition and chemical vapor deposition. / Kia, Alireza M. (Corresponding Author); Haufe, Nora; Esmaeili, Sajjad; Mart, Clemens; Utriainen, Mikko; Puurunen, Riikka L.; Weinreich, Wenke.

    In: Nanomaterials, Vol. 9, No. 7, 1035, 07.2019.

    Research output: Contribution to journalArticleScientificpeer-review

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    AU - Kia, Alireza M.

    AU - Haufe, Nora

    AU - Esmaeili, Sajjad

    AU - Mart, Clemens

    AU - Utriainen, Mikko

    AU - Puurunen, Riikka L.

    AU - Weinreich, Wenke

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    N2 - For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films.

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    KW - ToF-SIMS analysis

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