Total internal reflection mirrors with ultra-low losses in 3 µm thick SOI waveguides

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    9 Citations (Scopus)


    Total internal reflection (TIR) mirrors represent an ultra-compact and flexible method to turn light in a photonic integrated circuit (PIC). These can also have very broadband and polarisation independent operation. This paper presents results from 90 degree strip waveguide turning mirrors with novel geometry on a 3 µm SOI waveguide platform. The new TIR mirrors have record-low insertion loss of 0.08 dB/mirror. They are compared with previous designs that have demonstrated insertion losses down to 0.15 dB/mirror. The test structures consisted of up to 96 consecutive mirrors and were fabricated in a multi-project wafer run. The multi-moded test devices only propagate light in the fundamental mode. The mirrors can be used in single-mode PICs that combine low losses, small polarisation dependency, wide bandwidth and small footprint.
    Original languageEnglish
    Title of host publicationSilicon Photonics X
    EditorsGraham T. Reed, Michael R. Watts
    PublisherInternational Society for Optics and Photonics SPIE
    ISBN (Print)978-1-6284-1457-8
    Publication statusPublished - 27 Feb 2015
    MoE publication typeA4 Article in a conference publication
    EventSilicon Photonics X - San Francisco, United States
    Duration: 9 Feb 201512 Feb 2015

    Publication series

    SeriesProceedings of SPIE


    ConferenceSilicon Photonics X
    Abbreviated titleSPIE OPTO
    CountryUnited States
    CitySan Francisco


    • elliptic mirror
    • photonic integrated circuit
    • PIC
    • slicon photonics
    • silicon-on-insulator
    • SOI
    • TIR
    • total internal reflection
    • waveguide mirror

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    Aalto, T., Harjanne, M., Ylinen, S., Kapulainen, M., Vehmas, T., & Cherchi, M. (2015). Total internal reflection mirrors with ultra-low losses in 3 µm thick SOI waveguides. In G. T. Reed, & M. R. Watts (Eds.), Silicon Photonics X [93670B] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 9367