Towards all-polymer field-effect transistors with solution processable materials

Tomas G Bäcklund (Corresponding Author), Henrik G O Sandberg, Ronald Österbacka, Henrik Stubb, Tapio Mäkelä, Salme Jussila

Research output: Contribution to journalArticleScientificpeer-review

40 Citations (Scopus)

Abstract

We have fabricated polymer field-effect transistors (FET) from solution processable polymers. Starting with an inorganic structure using only an organic semiconductor (regio-regular poly(3-hexylthiophene)), the transistor performance was studied as the inorganic materials were replaced with polymeric alternatives one at a time. We see a gradual increase in subthreshold swing and off-currents and an increased threshold voltage when substituting the inorganic materials with polymer materials. The small reduction in transistor performance when going from inorganic substrate and insulator to polymeric materials indicates that it is possible to make flexible polymer devices from solution processed materials suitable for roll-to-roll processing. The all-polymer FET was realized using two different conducting polymers, polyaniline for the source and drain electrodes and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), PEDOT:PSS, for the gate electrode.
Original languageEnglish
Pages (from-to)87-91
Number of pages5
JournalSynthetic Metals
Volume148
Issue number1
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

Fingerprint

Field effect transistors
Polymers
field effect transistors
polymers
inorganic materials
Transistors
transistors
Electrodes
Semiconducting organic compounds
Conducting polymers
Polymer solutions
Threshold voltage
electrodes
organic semiconductors
conducting polymers
Polyaniline
threshold voltage
insulators
Substrates
Processing

Keywords

  • all-polymer,field-effect transistor,organic,polymer insulator,solution process

Cite this

Bäcklund, Tomas G ; Sandberg, Henrik G O ; Österbacka, Ronald ; Stubb, Henrik ; Mäkelä, Tapio ; Jussila, Salme. / Towards all-polymer field-effect transistors with solution processable materials. In: Synthetic Metals. 2005 ; Vol. 148, No. 1. pp. 87-91.
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Towards all-polymer field-effect transistors with solution processable materials. / Bäcklund, Tomas G (Corresponding Author); Sandberg, Henrik G O; Österbacka, Ronald; Stubb, Henrik; Mäkelä, Tapio; Jussila, Salme.

In: Synthetic Metals, Vol. 148, No. 1, 2005, p. 87-91.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Towards all-polymer field-effect transistors with solution processable materials

AU - Bäcklund, Tomas G

AU - Sandberg, Henrik G O

AU - Österbacka, Ronald

AU - Stubb, Henrik

AU - Mäkelä, Tapio

AU - Jussila, Salme

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AB - We have fabricated polymer field-effect transistors (FET) from solution processable polymers. Starting with an inorganic structure using only an organic semiconductor (regio-regular poly(3-hexylthiophene)), the transistor performance was studied as the inorganic materials were replaced with polymeric alternatives one at a time. We see a gradual increase in subthreshold swing and off-currents and an increased threshold voltage when substituting the inorganic materials with polymer materials. The small reduction in transistor performance when going from inorganic substrate and insulator to polymeric materials indicates that it is possible to make flexible polymer devices from solution processed materials suitable for roll-to-roll processing. The all-polymer FET was realized using two different conducting polymers, polyaniline for the source and drain electrodes and poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), PEDOT:PSS, for the gate electrode.

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