Towards plastic electronics: Patterning semiconducting polymers by nanoimprint lithography

M. Behl, J. Seekamp, S. Sankovysh, C.M. Sotomayor Torres, R. Zentel (Corresponding Author), Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

93 Citations (Scopus)

Abstract

The direct patterning of functional semiconducting polymers (see Figure) has been achieved with a nanoimprint lithography technique. The room‐temperature process described is time‐saving as repeated temperature cycling is not required. In addition, due to the direct patterning approach the need for further processing steps (plasma treatment) to pattern the underlying semiconducting material is eliminated.
Original languageEnglish
Pages (from-to)588-591
JournalAdvanced Materials
Volume14
Issue number8
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Semiconducting polymers
Nanoimprint lithography
Functional polymers
Electronic equipment
Plastics
Plasmas
Processing
Temperature

Cite this

Behl, M. ; Seekamp, J. ; Sankovysh, S. ; Sotomayor Torres, C.M. ; Zentel, R. ; Ahopelto, Jouni. / Towards plastic electronics : Patterning semiconducting polymers by nanoimprint lithography. In: Advanced Materials. 2002 ; Vol. 14, No. 8. pp. 588-591.
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Towards plastic electronics : Patterning semiconducting polymers by nanoimprint lithography. / Behl, M.; Seekamp, J.; Sankovysh, S.; Sotomayor Torres, C.M.; Zentel, R. (Corresponding Author); Ahopelto, Jouni.

In: Advanced Materials, Vol. 14, No. 8, 2002, p. 588-591.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Towards plastic electronics

T2 - Patterning semiconducting polymers by nanoimprint lithography

AU - Behl, M.

AU - Seekamp, J.

AU - Sankovysh, S.

AU - Sotomayor Torres, C.M.

AU - Zentel, R.

AU - Ahopelto, Jouni

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AB - The direct patterning of functional semiconducting polymers (see Figure) has been achieved with a nanoimprint lithography technique. The room‐temperature process described is time‐saving as repeated temperature cycling is not required. In addition, due to the direct patterning approach the need for further processing steps (plasma treatment) to pattern the underlying semiconducting material is eliminated.

U2 - 10.1002/1521-4095(20020418)14:8<588::AID-ADMA588>3.0.CO;2-K

DO - 10.1002/1521-4095(20020418)14:8<588::AID-ADMA588>3.0.CO;2-K

M3 - Article

VL - 14

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EP - 591

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 8

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