Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

M. Urdampilleta; L. Hutin; B. Jadot; B. Bertrand; Heorhii Bohuslavskyi; R. Maurand; S. Barraud; C. Bauerle; M. Sanquer; X. Jehl; S. De Franceschi; T. Meunier; M. Vinet

doi:10.23919/vlsit.2017.7998163

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

M. Urdampilleta, L. Hutin, B. Jadot, B. Bertrand, Heorhii Bohuslavskyi, R. Maurand, S. Barraud, C. Bauerle, M. Sanquer, X. Jehl, S. De Franceschi, T. Meunier, M. Vinet

Not published at VTT

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.

Original language	English
Title of host publication	2017 Symposium on VLSI Technology, VLSI Technology 2017
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	T172-T173
ISBN (Electronic)	978-4-86348-605-8
DOIs	https://doi.org/10.23919/vlsit.2017.7998163
Publication status	Published - Jun 2017
MoE publication type	A4 Article in a conference publication

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Urdampilleta, M., Hutin, L., Jadot, B., Bertrand, B., Bohuslavskyi, H., Maurand, R., Barraud, S., Bauerle, C., Sanquer, M., Jehl, X., Franceschi, S. D., Meunier, T., & Vinet, M. (2017). Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. In 2017 Symposium on VLSI Technology, VLSI Technology 2017 (pp. T172-T173). Article 7998163 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.23919/vlsit.2017.7998163

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title = "Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector",

abstract = "We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.",

author = "M. Urdampilleta and L. Hutin and B. Jadot and B. Bertrand and Heorhii Bohuslavskyi and R. Maurand and S. Barraud and C. Bauerle and M. Sanquer and X. Jehl and Franceschi, {S. De} and T. Meunier and M. Vinet",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.",

year = "2017",

month = jun,

doi = "10.23919/vlsit.2017.7998163",

language = "English",

pages = "T172--T173",

booktitle = "2017 Symposium on VLSI Technology, VLSI Technology 2017",

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Urdampilleta, M, Hutin, L, Jadot, B, Bertrand, B, Bohuslavskyi, H, Maurand, R, Barraud, S, Bauerle, C, Sanquer, M, Jehl, X, Franceschi, SD, Meunier, T & Vinet, M 2017, Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. in 2017 Symposium on VLSI Technology, VLSI Technology 2017., 7998163, IEEE Institute of Electrical and Electronic Engineers, pp. T172-T173. https://doi.org/10.23919/vlsit.2017.7998163

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. / Urdampilleta, M.; Hutin, L.; Jadot, B. et al.
2017 Symposium on VLSI Technology, VLSI Technology 2017. IEEE Institute of Electrical and Electronic Engineers, 2017. p. T172-T173 7998163.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

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T1 - Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

AU - Urdampilleta, M.

AU - Hutin, L.

AU - Jadot, B.

AU - Bertrand, B.

AU - Bohuslavskyi, Heorhii

AU - Maurand, R.

AU - Barraud, S.

AU - Bauerle, C.

AU - Sanquer, M.

AU - Jehl, X.

AU - Franceschi, S. De

AU - Meunier, T.

AU - Vinet, M.

PY - 2017/6

Y1 - 2017/6

N2 - We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.

AB - We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.

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DO - 10.23919/vlsit.2017.7998163

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BT - 2017 Symposium on VLSI Technology, VLSI Technology 2017

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Urdampilleta M, Hutin L, Jadot B, Bertrand B, Bohuslavskyi H, Maurand R et al. Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. In 2017 Symposium on VLSI Technology, VLSI Technology 2017. IEEE Institute of Electrical and Electronic Engineers. 2017. p. T172-T173. 7998163 doi: 10.23919/vlsit.2017.7998163

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

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