Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

M. Urdampilleta; L. Hutin; B. Jadot; B. Bertrand; Heorhii Bohuslavskyi; R. Maurand; S. Barraud; C. Bauerle; M. Sanquer; X. Jehl; S. De Franceschi; T. Meunier; M. Vinet

doi:10.23919/vlsit.2017.7998163

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

M. Urdampilleta
, L. Hutin
, B. Jadot
, B. Bertrand
, Heorhii Bohuslavskyi
, R. Maurand
, S. Barraud
, C. Bauerle
, M. Sanquer
, X. Jehl
, S. De Franceschi
, T. Meunier
, M. Vinet

Not published at VTT

Laboratoire d'électronique des technologies de l'information (LETI)
Institute for Nanoscience and Cryogenics (INAC)
Institut Néel

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

1 Citation (Scopus)

Abstract

We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.

Original language	English
Title of host publication	2017 Symposium on VLSI Technology, VLSI Technology 2017
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	T172-T173
ISBN (Electronic)	978-4-86348-605-8
DOIs	https://doi.org/10.23919/vlsit.2017.7998163
Publication status	Published - Jun 2017
MoE publication type	A4 Article in a conference publication

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10.23919/vlsit.2017.7998163

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Urdampilleta, M., Hutin, L., Jadot, B., Bertrand, B., Bohuslavskyi, H., Maurand, R., Barraud, S., Bauerle, C., Sanquer, M., Jehl, X., Franceschi, S. D., Meunier, T., & Vinet, M. (2017). Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. In 2017 Symposium on VLSI Technology, VLSI Technology 2017 (pp. T172-T173). Article 7998163 IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.23919/vlsit.2017.7998163

@inproceedings{f30b2e1f8eec49dbb6320088928a3a4f,

title = "Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector",

abstract = "We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.",

author = "M. Urdampilleta and L. Hutin and B. Jadot and B. Bertrand and Heorhii Bohuslavskyi and R. Maurand and S. Barraud and C. Bauerle and M. Sanquer and X. Jehl and Franceschi, \{S. De\} and T. Meunier and M. Vinet",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.",

year = "2017",

month = jun,

doi = "10.23919/vlsit.2017.7998163",

language = "English",

pages = "T172--T173",

booktitle = "2017 Symposium on VLSI Technology, VLSI Technology 2017",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

}

Urdampilleta, M, Hutin, L, Jadot, B, Bertrand, B, Bohuslavskyi, H, Maurand, R, Barraud, S, Bauerle, C, Sanquer, M, Jehl, X, Franceschi, SD, Meunier, T & Vinet, M 2017, Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. in 2017 Symposium on VLSI Technology, VLSI Technology 2017., 7998163, IEEE Institute of Electrical and Electronic Engineers, pp. T172-T173. https://doi.org/10.23919/vlsit.2017.7998163

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. / Urdampilleta, M.; Hutin, L.; Jadot, B. et al.
2017 Symposium on VLSI Technology, VLSI Technology 2017. IEEE Institute of Electrical and Electronic Engineers, 2017. p. T172-T173 7998163.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

AU - Urdampilleta, M.

AU - Hutin, L.

AU - Jadot, B.

AU - Bertrand, B.

AU - Bohuslavskyi, Heorhii

AU - Maurand, R.

AU - Barraud, S.

AU - Bauerle, C.

AU - Sanquer, M.

AU - Jehl, X.

AU - Franceschi, S. De

AU - Meunier, T.

AU - Vinet, M.

PY - 2017/6

Y1 - 2017/6

N2 - We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.

AB - We report the first demonstration of real-time monitoring of a single spin in a Quantum Dot (QD) using foundry-compatible Si MOS technology and a Split-Gate design with built-in charge detector. Since single-shot readout is an indispensable step in the pursuit of Si-based fault-tolerant quantum computing, this work contributes to asserting the fabrication of Si spin qubits in a MOS technology platform as a viable and promising option.

UR - https://www.scopus.com/pages/publications/85028066623

U2 - 10.23919/vlsit.2017.7998163

DO - 10.23919/vlsit.2017.7998163

M3 - Conference article in proceedings

SP - T172-T173

BT - 2017 Symposium on VLSI Technology, VLSI Technology 2017

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Urdampilleta M, Hutin L, Jadot B, Bertrand B, Bohuslavskyi H, Maurand R et al. Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector. In 2017 Symposium on VLSI Technology, VLSI Technology 2017. IEEE Institute of Electrical and Electronic Engineers. 2017. p. T172-T173. 7998163 doi: 10.23919/vlsit.2017.7998163

Towards quantum computing in Si MOS technology: Single-shot readout of spin states in a FDSOI split-gate device with built-in charge detector

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