Abstract
In this paper bottom gate bottom contact organic thin film transistors
utilizing R2R-processes for gate manufacturing, application of dielectric,
application of imprint resist, and hot-embossing of source-drain patterns are
demonstrated. Also the other process steps involved in the manufacturing
process i.e. dry etching, evaporation of source-drain electrodes, lift-off,
and evaporation of semiconductor can be made in a roll-to-roll fashion, thus
making the manufacturing route roll-to-roll compatible. The work presented in
this paper demonstrates that roll-to-roll NIL is applicable to create
source-drain structures with channel lengths much smaller than achieved by
other traditional R2R-printing techniques.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 8th International Conference on Multi-Material Micro Manufacture, 4M 2011 |
| Publisher | Research Publishing Services |
| Pages | 325-327 |
| ISBN (Print) | 978-981-07-0319-6 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A4 Article in a conference publication |
| Event | 8th International Conference on Multi-Material Micro Manufacture, 4M 2011 - Stuttgart, Germany Duration: 8 Nov 2011 → 10 Nov 2011 |
Conference
| Conference | 8th International Conference on Multi-Material Micro Manufacture, 4M 2011 |
|---|---|
| Abbreviated title | 4M 2011 |
| Country/Territory | Germany |
| City | Stuttgart |
| Period | 8/11/11 → 10/11/11 |
Keywords
- Organic transistor
- roll-to-roll
- printing
- hot-embossing
- NIL
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