Abstract
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
Original language | English |
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Title of host publication | 2018 IEEE International Electron Devices Meeting, IEDM 2018 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 6.5.1-6.5.4 |
ISBN (Electronic) | 978-1-7281-1987-8 |
DOIs | |
Publication status | Published - Dec 2018 |
MoE publication type | A4 Article in a conference publication |