Abstract
We present results from 400G transceiver development based on the hybrid integration of vertical-cavity surface emitting lasers and photodiode arrays on 3 and 12 μm silicon-on-insulator (SOI) chips. The integration of waveguide circuits, amplifiers and modulators on SOI is also reported.
Original language | English |
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Title of host publication | 43rd European Conference on Optical Communication, ECOC 2017 |
Publisher | IEEE Institute of Electrical and Electronic Engineers |
Pages | 1-3 |
Number of pages | 3 |
Volume | 2017-September |
ISBN (Electronic) | 978-1-5386-5624-2 |
DOIs | |
Publication status | Published - 24 Apr 2018 |
MoE publication type | A4 Article in a conference publication |
Event | 43rd European Conference on Optical Communication, ECOC 2017 - Gothenburg, Sweden Duration: 17 Sep 2017 → 21 Sep 2017 |
Conference
Conference | 43rd European Conference on Optical Communication, ECOC 2017 |
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Country | Sweden |
City | Gothenburg |
Period | 17/09/17 → 21/09/17 |
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Transceivers for 400G based on Hybrid Integrated Thick SOI and III/V Chips. / Aalto, Timo; Harjanne, Mikko; Vehmas, Tapani; Karppinen, Mikko; Sitomaniemi, Aila; Malacarne, Antonio; Neumeyr, Christian; Bauwelinck, Johan.
43rd European Conference on Optical Communication, ECOC 2017. Vol. 2017-September IEEE Institute of Electrical and Electronic Engineers , 2018. p. 1-3.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Transceivers for 400G based on Hybrid Integrated Thick SOI and III/V Chips
AU - Aalto, Timo
AU - Harjanne, Mikko
AU - Vehmas, Tapani
AU - Karppinen, Mikko
AU - Sitomaniemi, Aila
AU - Malacarne, Antonio
AU - Neumeyr, Christian
AU - Bauwelinck, Johan
PY - 2018/4/24
Y1 - 2018/4/24
N2 - We present results from 400G transceiver development based on the hybrid integration of vertical-cavity surface emitting lasers and photodiode arrays on 3 and 12 μm silicon-on-insulator (SOI) chips. The integration of waveguide circuits, amplifiers and modulators on SOI is also reported.
AB - We present results from 400G transceiver development based on the hybrid integration of vertical-cavity surface emitting lasers and photodiode arrays on 3 and 12 μm silicon-on-insulator (SOI) chips. The integration of waveguide circuits, amplifiers and modulators on SOI is also reported.
UR - http://www.scopus.com/inward/record.url?scp=85044339982&partnerID=8YFLogxK
U2 - 10.1109/ECOC.2017.8345865
DO - 10.1109/ECOC.2017.8345865
M3 - Conference article in proceedings
AN - SCOPUS:85044339982
VL - 2017-September
SP - 1
EP - 3
BT - 43rd European Conference on Optical Communication, ECOC 2017
PB - IEEE Institute of Electrical and Electronic Engineers
ER -