Transistor noise modeling for a 60 GHz CMOS LNA

Timo Karttaavi; Mikko Kantanen; Jan Holmberg

Transistor noise modeling for a 60 GHz CMOS LNA

Timo Karttaavi, Mikko Kantanen, Jan Holmberg

Nokia Research Center

Research output: Contribution to conference › Conference article › Scientific

Abstract

Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.

Original language	English
Publication status	Published - 2010
MoE publication type	Not Eligible
Event	Global Symposium on Millimeter Waves 2010, GSMM2010 - Incheon, Korea, Democratic People's Republic of Duration: 14 Apr 2010 → 16 Apr 2010

Conference

Conference	Global Symposium on Millimeter Waves 2010, GSMM2010
Abbreviated title	GSMM 2010
Country/Territory	Korea, Democratic People's Republic of
City	Incheon
Period	14/04/10 → 16/04/10

Cite this

@conference{5935d44cfcff436891945075c127efe2,

title = "Transistor noise modeling for a 60 GHz CMOS LNA",

abstract = "Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.",

author = "Timo Karttaavi and Mikko Kantanen and Jan Holmberg",

year = "2010",

language = "English",

note = "Global Symposium on Millimeter Waves 2010, GSMM2010, GSMM 2010 ; Conference date: 14-04-2010 Through 16-04-2010",

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TY - CONF

T1 - Transistor noise modeling for a 60 GHz CMOS LNA

AU - Karttaavi, Timo

AU - Kantanen, Mikko

AU - Holmberg, Jan

PY - 2010

Y1 - 2010

N2 - Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.

AB - Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.

M3 - Conference article

T2 - Global Symposium on Millimeter Waves 2010, GSMM2010

Y2 - 14 April 2010 through 16 April 2010

ER -

Transistor noise modeling for a 60 GHz CMOS LNA

Abstract

Conference

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