Transistor noise modeling for a 60 GHz CMOS LNA

Timo Karttaavi, Mikko Kantanen, Jan Holmberg

    Research output: Contribution to conferenceConference articleScientific

    Abstract

    Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.
    Original languageEnglish
    Publication statusPublished - 2010
    MoE publication typeNot Eligible
    EventGlobal Symposium on Millimeter Waves 2010, GSMM2010 - Incheon, Korea, Democratic People's Republic of
    Duration: 14 Apr 201016 Apr 2010

    Conference

    ConferenceGlobal Symposium on Millimeter Waves 2010, GSMM2010
    Abbreviated titleGSMM 2010
    CountryKorea, Democratic People's Republic of
    CityIncheon
    Period14/04/1016/04/10

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  • Cite this

    Karttaavi, T., Kantanen, M., & Holmberg, J. (2010). Transistor noise modeling for a 60 GHz CMOS LNA. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.