Transistor noise modeling for a 60 GHz CMOS LNA

Timo Karttaavi, Mikko Kantanen, Jan Holmberg

Research output: Contribution to conferenceConference articleScientific

Abstract

Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.
Original languageEnglish
Publication statusPublished - 2010
MoE publication typeNot Eligible
EventGlobal Symposium on Millimeter Waves 2010, GSMM2010 - Incheon, Korea, Democratic People's Republic of
Duration: 14 Apr 201016 Apr 2010

Conference

ConferenceGlobal Symposium on Millimeter Waves 2010, GSMM2010
Abbreviated titleGSMM 2010
CountryKorea, Democratic People's Republic of
CityIncheon
Period14/04/1016/04/10

Fingerprint

Transistors
Low noise amplifiers
Noise figure
Millimeter waves

Cite this

Karttaavi, T., Kantanen, M., & Holmberg, J. (2010). Transistor noise modeling for a 60 GHz CMOS LNA. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.
Karttaavi, Timo ; Kantanen, Mikko ; Holmberg, Jan. / Transistor noise modeling for a 60 GHz CMOS LNA. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.
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title = "Transistor noise modeling for a 60 GHz CMOS LNA",
abstract = "Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.",
author = "Timo Karttaavi and Mikko Kantanen and Jan Holmberg",
year = "2010",
language = "English",
note = "Global Symposium on Millimeter Waves 2010, GSMM2010, GSMM 2010 ; Conference date: 14-04-2010 Through 16-04-2010",

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Karttaavi, T, Kantanen, M & Holmberg, J 2010, 'Transistor noise modeling for a 60 GHz CMOS LNA' Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of, 14/04/10 - 16/04/10, .

Transistor noise modeling for a 60 GHz CMOS LNA. / Karttaavi, Timo; Kantanen, Mikko; Holmberg, Jan.

2010. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.

Research output: Contribution to conferenceConference articleScientific

TY - CONF

T1 - Transistor noise modeling for a 60 GHz CMOS LNA

AU - Karttaavi, Timo

AU - Kantanen, Mikko

AU - Holmberg, Jan

PY - 2010

Y1 - 2010

N2 - Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.

AB - Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.

M3 - Conference article

ER -

Karttaavi T, Kantanen M, Holmberg J. Transistor noise modeling for a 60 GHz CMOS LNA. 2010. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.