Transistor noise modeling for a 60 GHz CMOS LNA

Timo Karttaavi, Mikko Kantanen, Jan Holmberg

    Research output: Contribution to conferenceConference articleScientific

    Abstract

    Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.
    Original languageEnglish
    Publication statusPublished - 2010
    MoE publication typeNot Eligible
    EventGlobal Symposium on Millimeter Waves 2010, GSMM2010 - Incheon, Korea, Democratic People's Republic of
    Duration: 14 Apr 201016 Apr 2010

    Conference

    ConferenceGlobal Symposium on Millimeter Waves 2010, GSMM2010
    Abbreviated titleGSMM 2010
    CountryKorea, Democratic People's Republic of
    CityIncheon
    Period14/04/1016/04/10

    Fingerprint

    Transistors
    Low noise amplifiers
    Noise figure
    Millimeter waves

    Cite this

    Karttaavi, T., Kantanen, M., & Holmberg, J. (2010). Transistor noise modeling for a 60 GHz CMOS LNA. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.
    Karttaavi, Timo ; Kantanen, Mikko ; Holmberg, Jan. / Transistor noise modeling for a 60 GHz CMOS LNA. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.
    @conference{5935d44cfcff436891945075c127efe2,
    title = "Transistor noise modeling for a 60 GHz CMOS LNA",
    abstract = "Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.",
    author = "Timo Karttaavi and Mikko Kantanen and Jan Holmberg",
    year = "2010",
    language = "English",
    note = "Global Symposium on Millimeter Waves 2010, GSMM2010, GSMM 2010 ; Conference date: 14-04-2010 Through 16-04-2010",

    }

    Karttaavi, T, Kantanen, M & Holmberg, J 2010, 'Transistor noise modeling for a 60 GHz CMOS LNA', Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of, 14/04/10 - 16/04/10.

    Transistor noise modeling for a 60 GHz CMOS LNA. / Karttaavi, Timo; Kantanen, Mikko; Holmberg, Jan.

    2010. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.

    Research output: Contribution to conferenceConference articleScientific

    TY - CONF

    T1 - Transistor noise modeling for a 60 GHz CMOS LNA

    AU - Karttaavi, Timo

    AU - Kantanen, Mikko

    AU - Holmberg, Jan

    PY - 2010

    Y1 - 2010

    N2 - Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.

    AB - Noise parameters in the 50-75 GHz range were measured from a standard 90 nm CMOS transistor. The data was used to evaluate the applicability of a simple noise model to the millimeter-wave CMOS device. The resulting model was then used in the design of a 60 GHz low-noise amplifier to further verify the modeling accuracy. The modeling provided good match with measurement results. The amplifier exhibited a maximum gain of 17 dB and a 20 GHz wide -1dB-band. The measured noise figure minimum was 6 dB at 65 GHz.

    M3 - Conference article

    ER -

    Karttaavi T, Kantanen M, Holmberg J. Transistor noise modeling for a 60 GHz CMOS LNA. 2010. Paper presented at Global Symposium on Millimeter Waves 2010, GSMM2010, Incheon, Korea, Democratic People's Republic of.