Transit-time model for short-channel MOSFET'S

Mikael Andersson, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations.
Original languageEnglish
Pages (from-to)830 - 832
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume40
Issue number4
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

Fingerprint Dive into the research topics of 'Transit-time model for short-channel MOSFET'S'. Together they form a unique fingerprint.

  • Cite this