Transit-time model for short-channel MOSFET'S

Mikael Andersson, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations.
Original languageEnglish
Pages (from-to)830 - 832
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume40
Issue number4
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

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MOS devices
SPICE
Charge carriers
Computer simulation

Cite this

Andersson, Mikael ; Kuivalainen, Pekka. / Transit-time model for short-channel MOSFET'S. In: IEEE Transactions on Electron Devices. 1993 ; Vol. 40, No. 4. pp. 830 - 832.
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Transit-time model for short-channel MOSFET'S. / Andersson, Mikael; Kuivalainen, Pekka.

In: IEEE Transactions on Electron Devices, Vol. 40, No. 4, 1993, p. 830 - 832.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - Transit-time model for short-channel MOSFET'S

AU - Andersson, Mikael

AU - Kuivalainen, Pekka

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AB - A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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