Transit-time model for short-channel MOSFET'S

Mikael Andersson; Pekka Kuivalainen

doi:10.1109/16.202799

Transit-time model for short-channel MOSFET'S

Mikael Andersson, Pekka Kuivalainen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations.

Original language	English
Pages (from-to)	830-832
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	4
DOIs	https://doi.org/10.1109/16.202799
Publication status	Published - 1993
MoE publication type	A1 Journal article-refereed

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10.1109/16.202799

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title = "Transit-time model for short-channel MOSFET'S",

abstract = "A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations.",

author = "Mikael Andersson and Pekka Kuivalainen",

note = "Project code: PUO1008",

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AU - Kuivalainen, Pekka

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N2 - A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations.

AB - A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations.

U2 - 10.1109/16.202799

DO - 10.1109/16.202799

M3 - Article

SN - 0018-9383

VL - 40

SP - 830

EP - 832

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

Transit-time model for short-channel MOSFET'S

Abstract

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