Transit-time model for short-channel MOSFET'S

Mikael Andersson, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)


A new analytical transit-time model for submicrometer MOS devices has been developed. The model is based on a modified SPICE level-three MOSFET DC model, and it allows the use of a physical value for the charge carrier saturation velocity. This is essential for accurate transit-time modeling. Both DC and transit-time models show good agreement with the results obtained from more complicated two-dimensional numerical simulations.
Original languageEnglish
Pages (from-to)830-832
JournalIEEE Transactions on Electron Devices
Issue number4
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed


Dive into the research topics of 'Transit-time model for short-channel MOSFET'S'. Together they form a unique fingerprint.

Cite this