Transport properties of double‐gate SiO2–Si–SiO2 quantum well

Mika Prunnila (Corresponding Author), Jouni Ahopelto, H. Sakaki

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)

Abstract

We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.
Original languageEnglish
Pages (from-to)970 - 976
Number of pages7
JournalPhysica Status Solidi A: Applications and Materials Science
Volume202
Issue number6
DOIs
Publication statusPublished - 2005
MoE publication typeA1 Journal article-refereed

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Galvanomagnetic effects
Transport properties
Semiconductor quantum wells
Carrier concentration
transport properties
quantum wells
Wafer bonding
wafers
Magnetic fields
Fabrication
fabrication
electrical resistivity
Substrates
magnetic fields
Temperature
temperature

Keywords

  • quantum wells
  • wafer bonding

Cite this

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title = "Transport properties of double‐gate SiO2–Si–SiO2 quantum well",
abstract = "We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.",
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author = "Mika Prunnila and Jouni Ahopelto and H. Sakaki",
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Transport properties of double‐gate SiO2–Si–SiO2 quantum well. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Sakaki, H.

In: Physica Status Solidi A: Applications and Materials Science, Vol. 202, No. 6, 2005, p. 970 - 976.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Transport properties of double‐gate SiO2–Si–SiO2 quantum well

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Sakaki, H.

PY - 2005

Y1 - 2005

N2 - We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.

AB - We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.

KW - quantum wells

KW - wafer bonding

U2 - 10.1002/pssa.200460707

DO - 10.1002/pssa.200460707

M3 - Article

VL - 202

SP - 970

EP - 976

JO - Physica Status Solidi A: Applications and Materials Science

JF - Physica Status Solidi A: Applications and Materials Science

SN - 1862-6300

IS - 6

ER -