We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.
|Pages (from-to)||970 - 976|
|Number of pages||7|
|Journal||Physica Status Solidi A: Applications and Materials Science|
|Publication status||Published - 2005|
|MoE publication type||A1 Journal article-refereed|
- quantum wells
- wafer bonding