Transport properties of double‐gate SiO2–Si–SiO2 quantum well

Mika Prunnila (Corresponding Author), Jouni Ahopelto, H. Sakaki

    Research output: Contribution to journalArticleScientificpeer-review

    8 Citations (Scopus)

    Abstract

    We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.
    Original languageEnglish
    Pages (from-to)970 - 976
    Number of pages7
    JournalPhysica Status Solidi A: Applications and Materials Science
    Volume202
    Issue number6
    DOIs
    Publication statusPublished - 2005
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Galvanomagnetic effects
    Transport properties
    Semiconductor quantum wells
    Carrier concentration
    transport properties
    quantum wells
    Wafer bonding
    wafers
    Magnetic fields
    Fabrication
    fabrication
    electrical resistivity
    Substrates
    magnetic fields
    Temperature
    temperature

    Keywords

    • quantum wells
    • wafer bonding

    Cite this

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    title = "Transport properties of double‐gate SiO2–Si–SiO2 quantum well",
    abstract = "We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.",
    keywords = "quantum wells, wafer bonding",
    author = "Mika Prunnila and Jouni Ahopelto and H. Sakaki",
    year = "2005",
    doi = "10.1002/pssa.200460707",
    language = "English",
    volume = "202",
    pages = "970 -- 976",
    journal = "Physica Status Solidi A: Applications and Materials Science",
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    Transport properties of double‐gate SiO2–Si–SiO2 quantum well. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni; Sakaki, H.

    In: Physica Status Solidi A: Applications and Materials Science, Vol. 202, No. 6, 2005, p. 970 - 976.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Transport properties of double‐gate SiO2–Si–SiO2 quantum well

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    AU - Sakaki, H.

    PY - 2005

    Y1 - 2005

    N2 - We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.

    AB - We report on fabrication and low temperature transport properties of double‐gate SiO2–Si–SiO2 quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport properties of the device are characterized by low field Hall and high field magnetotransport measurements at 4.2 K and at 0.38 K, respectively. Top (back) Si–SiO2 interface peak mobility of 1.9 m2/Vs (1.0 m2/Vs) is measured at 4.2 K. When both gates have a (large) positive bias the Hall carrier density is observed to fall below the value of the expected total carrier density, which is interpreted to arise from the occupancy of the second sub‐band in the Si well. This is confirmed by the high field magnetotransport measurements. In quantizing magnetic fields the longitudinal resistivity minima show Landau level filling factor behavior which is typical for weakly coupled bi‐layers.

    KW - quantum wells

    KW - wafer bonding

    U2 - 10.1002/pssa.200460707

    DO - 10.1002/pssa.200460707

    M3 - Article

    VL - 202

    SP - 970

    EP - 976

    JO - Physica Status Solidi A: Applications and Materials Science

    JF - Physica Status Solidi A: Applications and Materials Science

    SN - 1862-6300

    IS - 6

    ER -