Transport properties of silicides: effects of ion-irradiation and annealing

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The authors report on the effects of ion implantation and rapid thermal annealing on the electrical transport properties of TiSi//2 and MoSi//2. The silicide layers were formed by solid phase reactions of sputtered metal films with silicon. Some of the wafers were implanted at room temperature with arsenic. To investigate the damage recovery, one of the samples were subjected to rapid thermal annealing. The resistivities of the silicides were measured in the van der Pauw configuration. The results are presented and discussed.
Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalVide, les Couches Minces
Volume42
Issue number236
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicides
Rapid thermal annealing
Ion bombardment
Transport properties
Annealing
Arsenic
Ion implantation
Recovery
Silicon
Metals
Temperature

Keywords

  • titanium silicide
  • ion beams
  • heat treatment
  • molybdenum silicide
  • rapid thermal annealing

Cite this

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title = "Transport properties of silicides: effects of ion-irradiation and annealing",
abstract = "The authors report on the effects of ion implantation and rapid thermal annealing on the electrical transport properties of TiSi//2 and MoSi//2. The silicide layers were formed by solid phase reactions of sputtered metal films with silicon. Some of the wafers were implanted at room temperature with arsenic. To investigate the damage recovery, one of the samples were subjected to rapid thermal annealing. The resistivities of the silicides were measured in the van der Pauw configuration. The results are presented and discussed.",
keywords = "titanium silicide, ion beams, heat treatment, molybdenum silicide, rapid thermal annealing",
author = "Ilkka Suni and Leif Gr{\"o}nberg and Jaakko Saarilahti",
year = "1987",
language = "English",
volume = "42",
pages = "233--236",
journal = "La Gazette du Vide",
issn = "1638-802X",
publisher = "Societe Francaise du Vide",
number = "236",

}

Transport properties of silicides : effects of ion-irradiation and annealing. / Suni, Ilkka; Grönberg, Leif; Saarilahti, Jaakko.

In: Vide, les Couches Minces, Vol. 42, No. 236, 1987, p. 233-236.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Transport properties of silicides

T2 - effects of ion-irradiation and annealing

AU - Suni, Ilkka

AU - Grönberg, Leif

AU - Saarilahti, Jaakko

PY - 1987

Y1 - 1987

N2 - The authors report on the effects of ion implantation and rapid thermal annealing on the electrical transport properties of TiSi//2 and MoSi//2. The silicide layers were formed by solid phase reactions of sputtered metal films with silicon. Some of the wafers were implanted at room temperature with arsenic. To investigate the damage recovery, one of the samples were subjected to rapid thermal annealing. The resistivities of the silicides were measured in the van der Pauw configuration. The results are presented and discussed.

AB - The authors report on the effects of ion implantation and rapid thermal annealing on the electrical transport properties of TiSi//2 and MoSi//2. The silicide layers were formed by solid phase reactions of sputtered metal films with silicon. Some of the wafers were implanted at room temperature with arsenic. To investigate the damage recovery, one of the samples were subjected to rapid thermal annealing. The resistivities of the silicides were measured in the van der Pauw configuration. The results are presented and discussed.

KW - titanium silicide

KW - ion beams

KW - heat treatment

KW - molybdenum silicide

KW - rapid thermal annealing

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AN - SCOPUS:0023314530

VL - 42

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JO - La Gazette du Vide

JF - La Gazette du Vide

SN - 1638-802X

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