Transport properties of silicides: effects of ion-irradiation and annealing

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Abstract

The authors report on the effects of ion implantation and rapid thermal annealing on the electrical transport properties of TiSi//2 and MoSi//2. The silicide layers were formed by solid phase reactions of sputtered metal films with silicon. Some of the wafers were implanted at room temperature with arsenic. To investigate the damage recovery, one of the samples were subjected to rapid thermal annealing. The resistivities of the silicides were measured in the van der Pauw configuration. The results are presented and discussed.
Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalVide, les Couches Minces
Volume42
Issue number236
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed

Keywords

  • titanium silicide
  • ion beams
  • heat treatment
  • molybdenum silicide
  • rapid thermal annealing

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