Abstract
The authors report on the effects of ion implantation and rapid thermal annealing on the electrical transport properties of TiSi2 and MoSi2. The silicide layers were formed by solid phase reactions of sputtered metal films with silicon. Some of the wafers were implanted at room temperature with arsenic. To investigate the damage recovery, one of the samples were subjected to rapid thermal annealing. The resistivities of the silicides were measured in the van der Pauw configuration. The results are presented and discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 233-236 |
| Journal | Vide, les Couches Minces |
| Volume | 42 |
| Issue number | 236 |
| Publication status | Published - 1987 |
| MoE publication type | A1 Journal article-refereed |
Keywords
- titanium silicide
- ion beams
- heat treatment
- molybdenum silicide
- rapid thermal annealing