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Trends in the valence band electronic structures of mixed uranium oxides

  • Kristina O. Kvashnina*
  • , Piotr M. Kowalski
  • , Sergei M. Butorin
  • , Gregory Leinders
  • , Janne Pakarinen
  • , René Bès
  • , Haijian Li
  • , Marc Verwerft
  • *Corresponding author for this work
  • European Synchrotron Radiation Facility ESRF
  • Helmholtz Centre Dresden-Rossendorf (HZDR)
  • Forschungszentrum Jülich GmbH (FZJ)
  • Jülich Aachen Research Alliance (JARA)
  • Uppsala University
  • Belgian Nuclear Research Centre (SCK CEN)
  • Aalto University

Research output: Contribution to journalArticleScientificpeer-review

Abstract

The valence band electronic structures of mixed uranium oxides (UO2, U4O9, U3O7, U3O8, and β-UO3) have been studied using the resonant inelastic X-ray scattering (RIXS) technique at the U M5 edge and computational methods. We show here that the RIXS technique and recorded U 5f-O 2p charge transfer excitations can be used to test the validity of theoretical approximations.

Original languageEnglish
Pages (from-to)9757-9760
Number of pages4
JournalChemical Communications
Volume54
Issue number70
DOIs
Publication statusPublished - 28 Aug 2018
MoE publication typeA1 Journal article-refereed

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