Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared

Anna Rissanen, Rami Mannila, Mikko Tuohiniemi, Jarkko Antila

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

7 Citations (Scopus)

Abstract

This paper presents a novel MOEMS Fabry-Perot interferometer (FPI) process platform for the range of 800-1050 nm. Simulation results including design and optimization of device properties in terms of transmission peak width, tuning range and electrical properties are discussed. Process flow for the device fabrication is presented, with overall process integration and backend dicing steps resulting in successful fabrication yield. The mirrors of the FPI consist of LPCVD (low-pressure chemical vapor) deposited polySi-SiN ?/4-thin film Bragg reflectors, with the air gap formed by sacrificial SiO2 etching in HF vapor. Silicon substrate below the optical aperture is removed by inductively coupled plasma (ICP) etching to ensure transmission in the visible-near infra-red (NIR), which is below silicon transmission range. The characterized optical properties of the chips are compared to the simulated values. Achieved optical aperture diameter size enables utilization of the chips in both imaging as well as single-point spectral sensors.
Original languageEnglish
Title of host publicationProceedings of SPIE
Subtitle of host publicationVolume 8977, MOEMS and Miniaturized Systems XIII, 2014
PublisherInternational Society for Optics and Photonics SPIE
Volume8977
ISBN (Print)978-0-8194-9890-8
DOIs
Publication statusPublished - 2014
MoE publication typeA4 Article in a conference publication
EventMOEMS and Miniaturized Systems XIII - San Francisco, CA, United States
Duration: 3 Feb 20146 Feb 2014

Publication series

SeriesProceedings of SPIE
Volume8977
ISSN0277-786X

Conference

ConferenceMOEMS and Miniaturized Systems XIII
CountryUnited States
CitySan Francisco, CA
Period3/02/146/02/14

Fingerprint

microoptoelectromechanical systems
Fabry-Perot interferometers
apertures
chips
vapors
fabrication
silicon
Bragg reflectors
plasma etching
low pressure
platforms
electrical properties
tuning
etching
mirrors
optical properties
optimization
sensors
air
thin films

Keywords

  • Fabry-Perot interferometers
  • microopto electromechanical systems
  • silicon
  • etching
  • microspectrometers
  • miniature hyperspectral imagers
  • MOEMS
  • near infrared

Cite this

Rissanen, A., Mannila, R., Tuohiniemi, M., & Antila, J. (2014). Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared. In Proceedings of SPIE: Volume 8977, MOEMS and Miniaturized Systems XIII, 2014 (Vol. 8977). [89770X] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 8977 https://doi.org/10.1117/12.2035732
Rissanen, Anna ; Mannila, Rami ; Tuohiniemi, Mikko ; Antila, Jarkko. / Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared. Proceedings of SPIE: Volume 8977, MOEMS and Miniaturized Systems XIII, 2014. Vol. 8977 International Society for Optics and Photonics SPIE, 2014. (Proceedings of SPIE, Vol. 8977).
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title = "Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared",
abstract = "This paper presents a novel MOEMS Fabry-Perot interferometer (FPI) process platform for the range of 800-1050 nm. Simulation results including design and optimization of device properties in terms of transmission peak width, tuning range and electrical properties are discussed. Process flow for the device fabrication is presented, with overall process integration and backend dicing steps resulting in successful fabrication yield. The mirrors of the FPI consist of LPCVD (low-pressure chemical vapor) deposited polySi-SiN ?/4-thin film Bragg reflectors, with the air gap formed by sacrificial SiO2 etching in HF vapor. Silicon substrate below the optical aperture is removed by inductively coupled plasma (ICP) etching to ensure transmission in the visible-near infra-red (NIR), which is below silicon transmission range. The characterized optical properties of the chips are compared to the simulated values. Achieved optical aperture diameter size enables utilization of the chips in both imaging as well as single-point spectral sensors.",
keywords = "Fabry-Perot interferometers, microopto electromechanical systems, silicon, etching, microspectrometers, miniature hyperspectral imagers, MOEMS, near infrared",
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Rissanen, A, Mannila, R, Tuohiniemi, M & Antila, J 2014, Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared. in Proceedings of SPIE: Volume 8977, MOEMS and Miniaturized Systems XIII, 2014. vol. 8977, 89770X, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 8977, MOEMS and Miniaturized Systems XIII, San Francisco, CA, United States, 3/02/14. https://doi.org/10.1117/12.2035732

Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared. / Rissanen, Anna; Mannila, Rami; Tuohiniemi, Mikko; Antila, Jarkko.

Proceedings of SPIE: Volume 8977, MOEMS and Miniaturized Systems XIII, 2014. Vol. 8977 International Society for Optics and Photonics SPIE, 2014. 89770X (Proceedings of SPIE, Vol. 8977).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - This paper presents a novel MOEMS Fabry-Perot interferometer (FPI) process platform for the range of 800-1050 nm. Simulation results including design and optimization of device properties in terms of transmission peak width, tuning range and electrical properties are discussed. Process flow for the device fabrication is presented, with overall process integration and backend dicing steps resulting in successful fabrication yield. The mirrors of the FPI consist of LPCVD (low-pressure chemical vapor) deposited polySi-SiN ?/4-thin film Bragg reflectors, with the air gap formed by sacrificial SiO2 etching in HF vapor. Silicon substrate below the optical aperture is removed by inductively coupled plasma (ICP) etching to ensure transmission in the visible-near infra-red (NIR), which is below silicon transmission range. The characterized optical properties of the chips are compared to the simulated values. Achieved optical aperture diameter size enables utilization of the chips in both imaging as well as single-point spectral sensors.

AB - This paper presents a novel MOEMS Fabry-Perot interferometer (FPI) process platform for the range of 800-1050 nm. Simulation results including design and optimization of device properties in terms of transmission peak width, tuning range and electrical properties are discussed. Process flow for the device fabrication is presented, with overall process integration and backend dicing steps resulting in successful fabrication yield. The mirrors of the FPI consist of LPCVD (low-pressure chemical vapor) deposited polySi-SiN ?/4-thin film Bragg reflectors, with the air gap formed by sacrificial SiO2 etching in HF vapor. Silicon substrate below the optical aperture is removed by inductively coupled plasma (ICP) etching to ensure transmission in the visible-near infra-red (NIR), which is below silicon transmission range. The characterized optical properties of the chips are compared to the simulated values. Achieved optical aperture diameter size enables utilization of the chips in both imaging as well as single-point spectral sensors.

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Rissanen A, Mannila R, Tuohiniemi M, Antila J. Tunable MOEMS Fabry-Perot interferometer for miniaturized spectral sensing in near-infrared. In Proceedings of SPIE: Volume 8977, MOEMS and Miniaturized Systems XIII, 2014. Vol. 8977. International Society for Optics and Photonics SPIE. 2014. 89770X. (Proceedings of SPIE, Vol. 8977). https://doi.org/10.1117/12.2035732