Tungsten: Sputter deposition and plasma etching

Sami Franssila

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)

Abstract

The plasma etch behaviour of magnetron sputtered tungsten films has been studied. Structured experiments using orthogonal arrays have been conducted to study the effects of deposition pressure, magnetron power and heating on film properties. Films which have low resistivity, bulk-like density and low tensile stresses (100–500 MPa) required for integrated circuit metallization have been obtained by optimizing the deposition conditions. Density and plasma etch rate in SF6 have been measured. Plasma etch rates of tungsten films depend significantly on deposition conditions. Previously, oxygen incorporated into the film was thought to be responsible for high etch rates. Because large etch rate differences have been measured for nearly oxygen-free films, it is postulated that density, rather than incorporated oxygen, should be used to explain the differences in plasma etch rates.
Original languageEnglish
Pages (from-to)358-363
JournalApplied Surface Science
Volume53
DOIs
Publication statusPublished - 17 Aug 1991
MoE publication typeA1 Journal article-refereed

Fingerprint

Sputter deposition
Tungsten
Plasma etching
Plasmas
Oxygen
Metallizing
Tensile stress
Integrated circuits
Heating
Experiments

Keywords

  • Tungsten
  • plasma etching

Cite this

Franssila, Sami. / Tungsten : Sputter deposition and plasma etching. In: Applied Surface Science. 1991 ; Vol. 53. pp. 358-363.
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Tungsten : Sputter deposition and plasma etching. / Franssila, Sami.

In: Applied Surface Science, Vol. 53, 17.08.1991, p. 358-363.

Research output: Contribution to journalArticleScientificpeer-review

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T2 - Sputter deposition and plasma etching

AU - Franssila, Sami

PY - 1991/8/17

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AB - The plasma etch behaviour of magnetron sputtered tungsten films has been studied. Structured experiments using orthogonal arrays have been conducted to study the effects of deposition pressure, magnetron power and heating on film properties. Films which have low resistivity, bulk-like density and low tensile stresses (100–500 MPa) required for integrated circuit metallization have been obtained by optimizing the deposition conditions. Density and plasma etch rate in SF6 have been measured. Plasma etch rates of tungsten films depend significantly on deposition conditions. Previously, oxygen incorporated into the film was thought to be responsible for high etch rates. Because large etch rate differences have been measured for nearly oxygen-free films, it is postulated that density, rather than incorporated oxygen, should be used to explain the differences in plasma etch rates.

KW - Tungsten

KW - plasma etching

U2 - 10.1016/0169-4332(91)90286-S

DO - 10.1016/0169-4332(91)90286-S

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