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Tungsten: Sputter deposition and plasma etching
Sami Franssila
VTT Technical Research Centre of Finland
Research output
:
Contribution to journal
›
Article
›
Scientific
›
peer-review
4
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Citations (Scopus)
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INIS
plasma
100%
deposition
100%
films
100%
sputtering
100%
tungsten
100%
etching
100%
density
50%
oxygen
50%
magnetrons
33%
heating
16%
optimization
16%
power
16%
pressure range mega pa
16%
integrated circuits
16%
Keyphrases
Tungsten
100%
Plasma Etching
100%
Sputter Deposition
100%
Etching Rate
80%
Deposition Conditions
40%
Tungsten Film
40%
Magnetron Sputtering
20%
Integrated Circuits
20%
Oxygen-free
20%
Metallization
20%
Film Properties
20%
Free-standing Film
20%
Low Resistivity
20%
Magnetron
20%
Rate Difference
20%
Deposition Pressure
20%
High Etch Rate
20%
Orthogonal Array
20%
Low Tensile Stress
20%
Material Science
Tungsten
100%
Plasma Etching
100%
Sputter Deposition
100%
Film
100%
Density
50%
Electrical Resistivity
16%
Electronic Circuit
16%
Ultimate Tensile Strength
16%
Physics
Blood Plasma
100%
Plasma Etching
100%
Magnetron
50%
Ultimate Tensile Strength
25%
Integrated Circuit
25%
Metallizing
25%
Engineering
Etch Rate
100%
Deposition Condition
40%
Magnetron
40%
Tensile Stress σ
20%
Metallizations
20%
Film Property
20%
Integrated Circuit
20%
Chemical Engineering
Sputter Deposition
100%
Film
100%
Metallizing
16%