Tuning thermal transport in ultrathin silicon membranes by surface nanoscale engineering

Sanghamitra Neogi (Corresponding Author), J. Sebastian Reparaz, Luiz Felipe C. Pereira, Bartlomiej Graczykowski, Markus R. Wagner, Marianna Sledzinska, Andrey Shchepetov, Mika Prunnila, Jouni Ahopelto, Clivia M. Sotomayor-Torres, Davide Donadio

Research output: Contribution to journalArticleScientificpeer-review

68 Citations (Scopus)

Abstract

A detailed understanding of the connections of fabrication and processing to structural and thermal properties of low-dimensional nanostructures is essential to design materials and devices for phononics, nanoscale thermal management, and thermoelectric applications. Silicon provides an ideal platform to study the relations between structure and heat transport since its thermal conductivity can be tuned over 2 orders of magnitude by nanostructuring. Combining realistic atomistic modeling and experiments, we unravel the origin of the thermal conductivity reduction in ultrathin suspended silicon membranes, down to a thickness of 4 nm. Heat transport is mostly controlled by surface scattering: rough layers of native oxide at surfaces limit the mean free path of thermal phonons below 100 nm. Removing the oxide layers by chemical processing allows us to tune the thermal conductivity over 1 order of magnitude. Our results guide materials design for future phononic applications, setting the length scale at which nanostructuring affects thermal phonons most effectively.
Original languageEnglish
Pages (from-to)3820-3828
JournalACS Nano
Volume9
Issue number4
DOIs
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
thermal conductivity
Tuning
tuning
engineering
membranes
Membranes
Thermal conductivity
phonons
silicon
Phonons
Oxides
heat
oxides
Surface scattering
mean free path
platforms
Processing
thermodynamic properties
Temperature control

Keywords

  • classical molecular dynamics
  • dispersion relations
  • inelastic light scattering
  • lattice thermal transport
  • phonon engineering
  • quasi-2D system
  • Si membranes
  • two-laser Raman thermometry

Cite this

Neogi, S., Reparaz, J. S., Pereira, L. F. C., Graczykowski, B., Wagner, M. R., Sledzinska, M., ... Donadio, D. (2015). Tuning thermal transport in ultrathin silicon membranes by surface nanoscale engineering. ACS Nano, 9(4), 3820-3828. https://doi.org/10.1021/nn506792d
Neogi, Sanghamitra ; Reparaz, J. Sebastian ; Pereira, Luiz Felipe C. ; Graczykowski, Bartlomiej ; Wagner, Markus R. ; Sledzinska, Marianna ; Shchepetov, Andrey ; Prunnila, Mika ; Ahopelto, Jouni ; Sotomayor-Torres, Clivia M. ; Donadio, Davide. / Tuning thermal transport in ultrathin silicon membranes by surface nanoscale engineering. In: ACS Nano. 2015 ; Vol. 9, No. 4. pp. 3820-3828.
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author = "Sanghamitra Neogi and Reparaz, {J. Sebastian} and Pereira, {Luiz Felipe C.} and Bartlomiej Graczykowski and Wagner, {Markus R.} and Marianna Sledzinska and Andrey Shchepetov and Mika Prunnila and Jouni Ahopelto and Sotomayor-Torres, {Clivia M.} and Davide Donadio",
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Neogi, S, Reparaz, JS, Pereira, LFC, Graczykowski, B, Wagner, MR, Sledzinska, M, Shchepetov, A, Prunnila, M, Ahopelto, J, Sotomayor-Torres, CM & Donadio, D 2015, 'Tuning thermal transport in ultrathin silicon membranes by surface nanoscale engineering', ACS Nano, vol. 9, no. 4, pp. 3820-3828. https://doi.org/10.1021/nn506792d

Tuning thermal transport in ultrathin silicon membranes by surface nanoscale engineering. / Neogi, Sanghamitra (Corresponding Author); Reparaz, J. Sebastian; Pereira, Luiz Felipe C.; Graczykowski, Bartlomiej; Wagner, Markus R.; Sledzinska, Marianna; Shchepetov, Andrey; Prunnila, Mika; Ahopelto, Jouni; Sotomayor-Torres, Clivia M.; Donadio, Davide.

In: ACS Nano, Vol. 9, No. 4, 2015, p. 3820-3828.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Tuning thermal transport in ultrathin silicon membranes by surface nanoscale engineering

AU - Neogi, Sanghamitra

AU - Reparaz, J. Sebastian

AU - Pereira, Luiz Felipe C.

AU - Graczykowski, Bartlomiej

AU - Wagner, Markus R.

AU - Sledzinska, Marianna

AU - Shchepetov, Andrey

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Sotomayor-Torres, Clivia M.

AU - Donadio, Davide

PY - 2015

Y1 - 2015

N2 - A detailed understanding of the connections of fabrication and processing to structural and thermal properties of low-dimensional nanostructures is essential to design materials and devices for phononics, nanoscale thermal management, and thermoelectric applications. Silicon provides an ideal platform to study the relations between structure and heat transport since its thermal conductivity can be tuned over 2 orders of magnitude by nanostructuring. Combining realistic atomistic modeling and experiments, we unravel the origin of the thermal conductivity reduction in ultrathin suspended silicon membranes, down to a thickness of 4 nm. Heat transport is mostly controlled by surface scattering: rough layers of native oxide at surfaces limit the mean free path of thermal phonons below 100 nm. Removing the oxide layers by chemical processing allows us to tune the thermal conductivity over 1 order of magnitude. Our results guide materials design for future phononic applications, setting the length scale at which nanostructuring affects thermal phonons most effectively.

AB - A detailed understanding of the connections of fabrication and processing to structural and thermal properties of low-dimensional nanostructures is essential to design materials and devices for phononics, nanoscale thermal management, and thermoelectric applications. Silicon provides an ideal platform to study the relations between structure and heat transport since its thermal conductivity can be tuned over 2 orders of magnitude by nanostructuring. Combining realistic atomistic modeling and experiments, we unravel the origin of the thermal conductivity reduction in ultrathin suspended silicon membranes, down to a thickness of 4 nm. Heat transport is mostly controlled by surface scattering: rough layers of native oxide at surfaces limit the mean free path of thermal phonons below 100 nm. Removing the oxide layers by chemical processing allows us to tune the thermal conductivity over 1 order of magnitude. Our results guide materials design for future phononic applications, setting the length scale at which nanostructuring affects thermal phonons most effectively.

KW - classical molecular dynamics

KW - dispersion relations

KW - inelastic light scattering

KW - lattice thermal transport

KW - phonon engineering

KW - quasi-2D system

KW - Si membranes

KW - two-laser Raman thermometry

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DO - 10.1021/nn506792d

M3 - Article

VL - 9

SP - 3820

EP - 3828

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 4

ER -

Neogi S, Reparaz JS, Pereira LFC, Graczykowski B, Wagner MR, Sledzinska M et al. Tuning thermal transport in ultrathin silicon membranes by surface nanoscale engineering. ACS Nano. 2015;9(4):3820-3828. https://doi.org/10.1021/nn506792d