Tunneling and hopping conduction in Langmuir-Blodgett thin films of poly(3-hexylthiophene)

Eero Punkka, Michael Rubner, Jeff Hettinger, James Brooks, Scott Hannahs

Research output: Contribution to journalArticleScientificpeer-review

40 Citations (Scopus)

Abstract

The electrical conductivity and field-effect mobility of undoped and NOPF6-doped Langmuir-Blodgett thin films of poly(3-hexylthiophene) have been measured as a function of temperature, electric field, and film thickness. These properties are compared with those of free-standing films. In undoped samples the conductivity is best described by variable-range hopping, whereas in the doped and dedoped states the model of charging-energy-limited tunneling between conducting islands is applicable. The data indicate metallic charge carrier densities within the conducting islands in the highly doped state. At electric fields close to the dielectric breakdown, a possible onset to Fowler-Nordheim tunneling is observed. As the samples become dedoped, the electrical properties indicate an increase in the average size of conducting islands, which are suggested to consist of polymer backbones separated by the alkyl side chains of neighboring molecules.
Original languageEnglish
Pages (from-to)9076 - 9086
Number of pages11
JournalPhysical Review B: Condensed Matter
Volume43
Issue number11
DOIs
Publication statusPublished - 1991
MoE publication typeA1 Journal article-refereed

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Electric fields
conduction
Thin films
thin films
Electric breakdown
Charge carriers
Field emission
Carrier concentration
Film thickness
Polymers
Electric properties
electric fields
Molecules
charging
charge carriers
film thickness
breakdown
electrical properties
conductivity
electrical resistivity

Cite this

Punkka, Eero ; Rubner, Michael ; Hettinger, Jeff ; Brooks, James ; Hannahs, Scott. / Tunneling and hopping conduction in Langmuir-Blodgett thin films of poly(3-hexylthiophene). In: Physical Review B: Condensed Matter. 1991 ; Vol. 43, No. 11. pp. 9076 - 9086.
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abstract = "The electrical conductivity and field-effect mobility of undoped and NOPF6-doped Langmuir-Blodgett thin films of poly(3-hexylthiophene) have been measured as a function of temperature, electric field, and film thickness. These properties are compared with those of free-standing films. In undoped samples the conductivity is best described by variable-range hopping, whereas in the doped and dedoped states the model of charging-energy-limited tunneling between conducting islands is applicable. The data indicate metallic charge carrier densities within the conducting islands in the highly doped state. At electric fields close to the dielectric breakdown, a possible onset to Fowler-Nordheim tunneling is observed. As the samples become dedoped, the electrical properties indicate an increase in the average size of conducting islands, which are suggested to consist of polymer backbones separated by the alkyl side chains of neighboring molecules.",
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Tunneling and hopping conduction in Langmuir-Blodgett thin films of poly(3-hexylthiophene). / Punkka, Eero; Rubner, Michael; Hettinger, Jeff; Brooks, James; Hannahs, Scott.

In: Physical Review B: Condensed Matter, Vol. 43, No. 11, 1991, p. 9076 - 9086.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Tunneling and hopping conduction in Langmuir-Blodgett thin films of poly(3-hexylthiophene)

AU - Punkka, Eero

AU - Rubner, Michael

AU - Hettinger, Jeff

AU - Brooks, James

AU - Hannahs, Scott

N1 - Project code: puo0005

PY - 1991

Y1 - 1991

N2 - The electrical conductivity and field-effect mobility of undoped and NOPF6-doped Langmuir-Blodgett thin films of poly(3-hexylthiophene) have been measured as a function of temperature, electric field, and film thickness. These properties are compared with those of free-standing films. In undoped samples the conductivity is best described by variable-range hopping, whereas in the doped and dedoped states the model of charging-energy-limited tunneling between conducting islands is applicable. The data indicate metallic charge carrier densities within the conducting islands in the highly doped state. At electric fields close to the dielectric breakdown, a possible onset to Fowler-Nordheim tunneling is observed. As the samples become dedoped, the electrical properties indicate an increase in the average size of conducting islands, which are suggested to consist of polymer backbones separated by the alkyl side chains of neighboring molecules.

AB - The electrical conductivity and field-effect mobility of undoped and NOPF6-doped Langmuir-Blodgett thin films of poly(3-hexylthiophene) have been measured as a function of temperature, electric field, and film thickness. These properties are compared with those of free-standing films. In undoped samples the conductivity is best described by variable-range hopping, whereas in the doped and dedoped states the model of charging-energy-limited tunneling between conducting islands is applicable. The data indicate metallic charge carrier densities within the conducting islands in the highly doped state. At electric fields close to the dielectric breakdown, a possible onset to Fowler-Nordheim tunneling is observed. As the samples become dedoped, the electrical properties indicate an increase in the average size of conducting islands, which are suggested to consist of polymer backbones separated by the alkyl side chains of neighboring molecules.

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DO - 10.1103/PhysRevB.43.9076

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JO - Physical Review B

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