Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Victor-Tapio Rangel-Kuoppa; Sami Suihkonen; Markku Sopanen; Harri Lipsanen

doi:10.1143/JJAP.48.070201

Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Victor-Tapio Rangel-Kuoppa, Sami Suihkonen, Markku Sopanen, Harri Lipsanen

Not published at VTT

Aalto University

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m* 1- = 0:237m0 is obtained.

Original language	English
Article number	070201
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	7R
DOIs	https://doi.org/10.1143/JJAP.48.070201
Publication status	Published - Jul 2009
MoE publication type	A1 Journal article-refereed

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Cite this

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title = "Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes",

abstract = "The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m* 1- = 0:237m0 is obtained.",

author = "Victor-Tapio Rangel-Kuoppa and Sami Suihkonen and Markku Sopanen and Harri Lipsanen",

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AU - Rangel-Kuoppa, Victor-Tapio

AU - Suihkonen, Sami

AU - Sopanen, Markku

AU - Lipsanen, Harri

N1 - M1 - 070201

PY - 2009/7

Y1 - 2009/7

N2 - The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m* 1- = 0:237m0 is obtained.

AB - The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m* 1- = 0:237m0 is obtained.

U2 - 10.1143/JJAP.48.070201

DO - 10.1143/JJAP.48.070201

M3 - Article

SN - 0021-4922

VL - 48

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7R

M1 - 070201

ER -

Tunneling explanation for the temperature dependence of current-voltage characteristics of Pt/InN Schottky barrier diodes

Abstract

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