Two-dimensional metallic state in silicon-on-insulator structures

G. Brunthaler (Corresponding Author), B. Lindner, G. Pillwein, S. Griesser, Mika Prunnila, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.
    Original languageEnglish
    Pages (from-to)252 - 255
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume22
    Issue number1-3
    DOIs
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon
    insulators
    electrical resistivity
    silicon
    metal oxide semiconductors
    ballistics
    screening
    Ballistics
    impurities
    Temperature
    Screening
    Metals
    scattering
    Scattering
    Impurities
    interactions
    temperature

    Keywords

    • 2D metal-insulator transition
    • Si inversion layer
    • silicon-on-insulator
    • semiconductors
    • metal oxides

    Cite this

    Brunthaler, G. ; Lindner, B. ; Pillwein, G. ; Griesser, S. ; Prunnila, Mika ; Ahopelto, Jouni. / Two-dimensional metallic state in silicon-on-insulator structures. In: Physica E: Low-Dimensional Systems and Nanostructures. 2004 ; Vol. 22, No. 1-3. pp. 252 - 255.
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    title = "Two-dimensional metallic state in silicon-on-insulator structures",
    abstract = "In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.",
    keywords = "2D metal-insulator transition, Si inversion layer, silicon-on-insulator, semiconductors, metal oxides",
    author = "G. Brunthaler and B. Lindner and G. Pillwein and S. Griesser and Mika Prunnila and Jouni Ahopelto",
    year = "2004",
    doi = "10.1016/j.physe.2003.11.261",
    language = "English",
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    Two-dimensional metallic state in silicon-on-insulator structures. / Brunthaler, G. (Corresponding Author); Lindner, B.; Pillwein, G.; Griesser, S.; Prunnila, Mika; Ahopelto, Jouni.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 22, No. 1-3, 2004, p. 252 - 255.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Two-dimensional metallic state in silicon-on-insulator structures

    AU - Brunthaler, G.

    AU - Lindner, B.

    AU - Pillwein, G.

    AU - Griesser, S.

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    PY - 2004

    Y1 - 2004

    N2 - In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.

    AB - In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.

    KW - 2D metal-insulator transition

    KW - Si inversion layer

    KW - silicon-on-insulator

    KW - semiconductors

    KW - metal oxides

    U2 - 10.1016/j.physe.2003.11.261

    DO - 10.1016/j.physe.2003.11.261

    M3 - Article

    VL - 22

    SP - 252

    EP - 255

    JO - Physica E: Low-Dimensional Systems and Nanostructures

    JF - Physica E: Low-Dimensional Systems and Nanostructures

    SN - 1386-9477

    IS - 1-3

    ER -