Two-dimensional metallic state in silicon-on-insulator structures

G. Brunthaler (Corresponding Author), B. Lindner, G. Pillwein, S. Griesser, Mika Prunnila, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.
Original languageEnglish
Pages (from-to)252 - 255
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
insulators
electrical resistivity
silicon
metal oxide semiconductors
ballistics
screening
Ballistics
impurities
Temperature
Screening
Metals
scattering
Scattering
Impurities
interactions
temperature

Keywords

  • 2D metal-insulator transition
  • Si inversion layer
  • silicon-on-insulator
  • semiconductors
  • metal oxides

Cite this

Brunthaler, G. ; Lindner, B. ; Pillwein, G. ; Griesser, S. ; Prunnila, Mika ; Ahopelto, Jouni. / Two-dimensional metallic state in silicon-on-insulator structures. In: Physica E: Low-Dimensional Systems and Nanostructures. 2004 ; Vol. 22, No. 1-3. pp. 252 - 255.
@article{3495771f26ca4feeabfc48213676d55c,
title = "Two-dimensional metallic state in silicon-on-insulator structures",
abstract = "In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.",
keywords = "2D metal-insulator transition, Si inversion layer, silicon-on-insulator, semiconductors, metal oxides",
author = "G. Brunthaler and B. Lindner and G. Pillwein and S. Griesser and Mika Prunnila and Jouni Ahopelto",
year = "2004",
doi = "10.1016/j.physe.2003.11.261",
language = "English",
volume = "22",
pages = "252 -- 255",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "1-3",

}

Two-dimensional metallic state in silicon-on-insulator structures. / Brunthaler, G. (Corresponding Author); Lindner, B.; Pillwein, G.; Griesser, S.; Prunnila, Mika; Ahopelto, Jouni.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 22, No. 1-3, 2004, p. 252 - 255.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Two-dimensional metallic state in silicon-on-insulator structures

AU - Brunthaler, G.

AU - Lindner, B.

AU - Pillwein, G.

AU - Griesser, S.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2004

Y1 - 2004

N2 - In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.

AB - In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.

KW - 2D metal-insulator transition

KW - Si inversion layer

KW - silicon-on-insulator

KW - semiconductors

KW - metal oxides

U2 - 10.1016/j.physe.2003.11.261

DO - 10.1016/j.physe.2003.11.261

M3 - Article

VL - 22

SP - 252

EP - 255

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-3

ER -