Two-dimensional metallic state in silicon-on-insulator structures

G. Brunthaler (Corresponding Author), B. Lindner, G. Pillwein, S. Griesser, Mika Prunnila, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)


    In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.
    Original languageEnglish
    Pages (from-to)252 - 255
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Issue number1-3
    Publication statusPublished - 2004
    MoE publication typeA1 Journal article-refereed


    • 2D metal-insulator transition
    • Si inversion layer
    • silicon-on-insulator
    • semiconductors
    • metal oxides

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