Two-dimensional metallic state in silicon-on-insulator structures

G. Brunthaler; B. Lindner; G. Pillwein; S. Griesser; Mika Prunnila; Jouni Ahopelto

doi:10.1016/j.physe.2003.11.261

Two-dimensional metallic state in silicon-on-insulator structures

G. Brunthaler^*
, B. Lindner
, G. Pillwein
, S. Griesser
, Mika Prunnila
, Jouni Ahopelto

^*Corresponding author for this work

Johannes Kepler University of Linz

Research output: Contribution to journal › Article › Scientific › peer-review

2 Citations (Scopus)

Abstract

In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm² / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.

Original language	English
Pages (from-to)	252-255
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	22
Issue number	1-3
DOIs	https://doi.org/10.1016/j.physe.2003.11.261
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

Keywords

2D metal-insulator transition
Si inversion layer
silicon-on-insulator
semiconductors
metal oxides

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10.1016/j.physe.2003.11.261

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title = "Two-dimensional metallic state in silicon-on-insulator structures",

abstract = "In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.",

keywords = "2D metal-insulator transition, Si inversion layer, silicon-on-insulator, semiconductors, metal oxides",

author = "G. Brunthaler and B. Lindner and G. Pillwein and S. Griesser and Mika Prunnila and Jouni Ahopelto",

year = "2004",

doi = "10.1016/j.physe.2003.11.261",

language = "English",

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pages = "252--255",

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number = "1-3",

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TY - JOUR

T1 - Two-dimensional metallic state in silicon-on-insulator structures

AU - Brunthaler, G.

AU - Lindner, B.

AU - Pillwein, G.

AU - Griesser, S.

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2004

Y1 - 2004

N2 - In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.

AB - In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of 25,000 cm2 / V s a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.

KW - 2D metal-insulator transition

KW - Si inversion layer

KW - silicon-on-insulator

KW - semiconductors

KW - metal oxides

U2 - 10.1016/j.physe.2003.11.261

DO - 10.1016/j.physe.2003.11.261

M3 - Article

SN - 1386-9477

VL - 22

SP - 252

EP - 255

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-3

ER -

Two-dimensional metallic state in silicon-on-insulator structures

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Keywords

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