Two sub-band conductivity of Si quantum well

Mika Prunnila (Corresponding Author), Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

We report on two sub-band/bi-layer transport in double gate SiO2–Si–SiO2 quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between ~ 0:7x1016–3:0x1016 m-2. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.
Original languageEnglish
Pages (from-to)281-284
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume32
Issue number1-2
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

Wave functions
Semiconductor quantum wells
Carrier concentration
quantum wells
Scattering
conductivity
Electrons
Electric potential
spacing
wave functions
disorders
thresholds
Direction compound
electric potential
scattering
electrons

Keywords

  • two-dimensional electron gas
  • localization
  • resonant coupling
  • bi-layer
  • silicon
  • quantum wells

Cite this

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title = "Two sub-band conductivity of Si quantum well",
abstract = "We report on two sub-band/bi-layer transport in double gate SiO2–Si–SiO2 quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between ~ 0:7x1016–3:0x1016 m-2. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.",
keywords = "two-dimensional electron gas, localization, resonant coupling, bi-layer, silicon, quantum wells",
author = "Mika Prunnila and Jouni Ahopelto",
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language = "English",
volume = "32",
pages = "281--284",
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}

Two sub-band conductivity of Si quantum well. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, No. 1-2, 2006, p. 281-284.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Two sub-band conductivity of Si quantum well

AU - Prunnila, Mika

AU - Ahopelto, Jouni

PY - 2006

Y1 - 2006

N2 - We report on two sub-band/bi-layer transport in double gate SiO2–Si–SiO2 quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between ~ 0:7x1016–3:0x1016 m-2. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.

AB - We report on two sub-band/bi-layer transport in double gate SiO2–Si–SiO2 quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between ~ 0:7x1016–3:0x1016 m-2. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.

KW - two-dimensional electron gas

KW - localization

KW - resonant coupling

KW - bi-layer

KW - silicon

KW - quantum wells

U2 - 10.1016/j.physe.2005.12.093

DO - 10.1016/j.physe.2005.12.093

M3 - Article

VL - 32

SP - 281

EP - 284

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 1-2

ER -