Two sub-band conductivity of Si quantum well

Mika Prunnila (Corresponding Author), Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)

    Abstract

    We report on two sub-band/bi-layer transport in double gate SiO2–Si–SiO2 quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between ~ 0:7x1016–3:0x1016 m-2. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.
    Original languageEnglish
    Pages (from-to)281-284
    Number of pages4
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume32
    Issue number1-2
    DOIs
    Publication statusPublished - 2006
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Wave functions
    Semiconductor quantum wells
    Carrier concentration
    quantum wells
    Scattering
    conductivity
    Electrons
    Electric potential
    spacing
    wave functions
    disorders
    thresholds
    Direction compound
    electric potential
    scattering
    electrons

    Keywords

    • two-dimensional electron gas
    • localization
    • resonant coupling
    • bi-layer
    • silicon
    • quantum wells

    Cite this

    @article{a67217e66b484393990127aa91800330,
    title = "Two sub-band conductivity of Si quantum well",
    abstract = "We report on two sub-band/bi-layer transport in double gate SiO2–Si–SiO2 quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between ~ 0:7x1016–3:0x1016 m-2. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.",
    keywords = "two-dimensional electron gas, localization, resonant coupling, bi-layer, silicon, quantum wells",
    author = "Mika Prunnila and Jouni Ahopelto",
    year = "2006",
    doi = "10.1016/j.physe.2005.12.093",
    language = "English",
    volume = "32",
    pages = "281--284",
    journal = "Physica E: Low-Dimensional Systems and Nanostructures",
    issn = "1386-9477",
    publisher = "Elsevier",
    number = "1-2",

    }

    Two sub-band conductivity of Si quantum well. / Prunnila, Mika (Corresponding Author); Ahopelto, Jouni.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 32, No. 1-2, 2006, p. 281-284.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Two sub-band conductivity of Si quantum well

    AU - Prunnila, Mika

    AU - Ahopelto, Jouni

    PY - 2006

    Y1 - 2006

    N2 - We report on two sub-band/bi-layer transport in double gate SiO2–Si–SiO2 quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between ~ 0:7x1016–3:0x1016 m-2. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.

    AB - We report on two sub-band/bi-layer transport in double gate SiO2–Si–SiO2 quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacing changes monotonically from 2.3 to 0.3 meV when the total electron density is adjusted by gate voltages between ~ 0:7x1016–3:0x1016 m-2. The conductivity is mapped in large gate bias window and it shows strong non-monotonic features. At symmetric well potential and high density these features are addressed to sub-band wave function delocalization in the quantization direction and to different disorder of the top and bottom interfaces of the Si well. In the gate bias regimes close to second sub-band/bi-layer threshold the non-monotonic behavior is interpreted to arise from scattering from the other electron sub-system with localized or low mobility states.

    KW - two-dimensional electron gas

    KW - localization

    KW - resonant coupling

    KW - bi-layer

    KW - silicon

    KW - quantum wells

    U2 - 10.1016/j.physe.2005.12.093

    DO - 10.1016/j.physe.2005.12.093

    M3 - Article

    VL - 32

    SP - 281

    EP - 284

    JO - Physica E: Low-Dimensional Systems and Nanostructures

    JF - Physica E: Low-Dimensional Systems and Nanostructures

    SN - 1386-9477

    IS - 1-2

    ER -