Ultra-thin free-standing single crystalline silicon membranes with strain control

Andrey Shchepetov, Mika Prunnila, F. Alzina, L. Schneider, J. Cuffe, H. Jiang, E.I. Kauppinen, C.M. Sotomayor Torres, Jouni Ahopelto (Corresponding Author)

    Research output: Contribution to journalArticleScientificpeer-review

    42 Citations (Scopus)

    Abstract

    We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.
    Original languageEnglish
    Pages (from-to)192108-192111
    Number of pages3
    JournalApplied Physics Letters
    Volume102
    Issue number19
    DOIs
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    membranes
    silicon
    buckling
    mechanical properties
    photonics
    fabrication
    electronics

    Keywords

    • band structure
    • buckling
    • elemental semiconductors
    • semiconductor thin films
    • silicon
    • strain control

    Cite this

    Shchepetov, Andrey ; Prunnila, Mika ; Alzina, F. ; Schneider, L. ; Cuffe, J. ; Jiang, H. ; Kauppinen, E.I. ; Sotomayor Torres, C.M. ; Ahopelto, Jouni. / Ultra-thin free-standing single crystalline silicon membranes with strain control. In: Applied Physics Letters. 2013 ; Vol. 102, No. 19. pp. 192108-192111.
    @article{ceae37301fbf44f1b389940319dca670,
    title = "Ultra-thin free-standing single crystalline silicon membranes with strain control",
    abstract = "We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.",
    keywords = "band structure, buckling, elemental semiconductors, semiconductor thin films, silicon, strain control",
    author = "Andrey Shchepetov and Mika Prunnila and F. Alzina and L. Schneider and J. Cuffe and H. Jiang and E.I. Kauppinen and {Sotomayor Torres}, C.M. and Jouni Ahopelto",
    year = "2013",
    doi = "10.1063/1.4807130",
    language = "English",
    volume = "102",
    pages = "192108--192111",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "19",

    }

    Shchepetov, A, Prunnila, M, Alzina, F, Schneider, L, Cuffe, J, Jiang, H, Kauppinen, EI, Sotomayor Torres, CM & Ahopelto, J 2013, 'Ultra-thin free-standing single crystalline silicon membranes with strain control', Applied Physics Letters, vol. 102, no. 19, pp. 192108-192111. https://doi.org/10.1063/1.4807130

    Ultra-thin free-standing single crystalline silicon membranes with strain control. / Shchepetov, Andrey; Prunnila, Mika; Alzina, F.; Schneider, L.; Cuffe, J.; Jiang, H.; Kauppinen, E.I.; Sotomayor Torres, C.M.; Ahopelto, Jouni (Corresponding Author).

    In: Applied Physics Letters, Vol. 102, No. 19, 2013, p. 192108-192111.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Ultra-thin free-standing single crystalline silicon membranes with strain control

    AU - Shchepetov, Andrey

    AU - Prunnila, Mika

    AU - Alzina, F.

    AU - Schneider, L.

    AU - Cuffe, J.

    AU - Jiang, H.

    AU - Kauppinen, E.I.

    AU - Sotomayor Torres, C.M.

    AU - Ahopelto, Jouni

    PY - 2013

    Y1 - 2013

    N2 - We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.

    AB - We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.

    KW - band structure

    KW - buckling

    KW - elemental semiconductors

    KW - semiconductor thin films

    KW - silicon

    KW - strain control

    U2 - 10.1063/1.4807130

    DO - 10.1063/1.4807130

    M3 - Article

    VL - 102

    SP - 192108

    EP - 192111

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 19

    ER -