Ultra-thin free-standing single crystalline silicon membranes with strain control

Andrey Shchepetov, Mika Prunnila, F. Alzina, L. Schneider, J. Cuffe, H. Jiang, E.I. Kauppinen, C.M. Sotomayor Torres, Jouni Ahopelto (Corresponding Author)

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.
Original languageEnglish
Pages (from-to)192108-192111
Number of pages3
JournalApplied Physics Letters
Volume102
Issue number19
DOIs
Publication statusPublished - 2013
MoE publication typeA1 Journal article-refereed

Fingerprint

membranes
silicon
buckling
mechanical properties
photonics
fabrication
electronics

Keywords

  • band structure
  • buckling
  • elemental semiconductors
  • semiconductor thin films
  • silicon
  • strain control

Cite this

Shchepetov, Andrey ; Prunnila, Mika ; Alzina, F. ; Schneider, L. ; Cuffe, J. ; Jiang, H. ; Kauppinen, E.I. ; Sotomayor Torres, C.M. ; Ahopelto, Jouni. / Ultra-thin free-standing single crystalline silicon membranes with strain control. In: Applied Physics Letters. 2013 ; Vol. 102, No. 19. pp. 192108-192111.
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abstract = "We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.",
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Shchepetov, A, Prunnila, M, Alzina, F, Schneider, L, Cuffe, J, Jiang, H, Kauppinen, EI, Sotomayor Torres, CM & Ahopelto, J 2013, 'Ultra-thin free-standing single crystalline silicon membranes with strain control', Applied Physics Letters, vol. 102, no. 19, pp. 192108-192111. https://doi.org/10.1063/1.4807130

Ultra-thin free-standing single crystalline silicon membranes with strain control. / Shchepetov, Andrey; Prunnila, Mika; Alzina, F.; Schneider, L.; Cuffe, J.; Jiang, H.; Kauppinen, E.I.; Sotomayor Torres, C.M.; Ahopelto, Jouni (Corresponding Author).

In: Applied Physics Letters, Vol. 102, No. 19, 2013, p. 192108-192111.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Ultra-thin free-standing single crystalline silicon membranes with strain control

AU - Shchepetov, Andrey

AU - Prunnila, Mika

AU - Alzina, F.

AU - Schneider, L.

AU - Cuffe, J.

AU - Jiang, H.

AU - Kauppinen, E.I.

AU - Sotomayor Torres, C.M.

AU - Ahopelto, Jouni

PY - 2013

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AB - We report on fabrication and characterization of ultra-thin suspended single crystalline flat silicon membranes with thickness down to 6 nm. We have developed a method to control the strain in the membranes by adding a strain compensating frame on the silicon membrane perimeter to avoid buckling after the release. We show that by changing the properties of the frame the strain of the membrane can be tuned in controlled manner. Consequently, both the mechanical properties and the band structure can be engineered, and the resulting membranes provide a unique laboratory to study low-dimensional electronic, photonic, and phononic phenomena.

KW - band structure

KW - buckling

KW - elemental semiconductors

KW - semiconductor thin films

KW - silicon

KW - strain control

U2 - 10.1063/1.4807130

DO - 10.1063/1.4807130

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SP - 192108

EP - 192111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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