Ultra-wideband shielded vertical via transitions from DC up to the V-band

T. Kangasvieri; J. Halme; J. Vähäkangas; Markku Lahti

doi:10.1109/EMICC.2006.282686

Ultra-wideband shielded vertical via transitions from DC up to the V-band

T. Kangasvieri, J. Halme, J. Vähäkangas, Markku Lahti

University of Oulu

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

15 Citations (Scopus)

Abstract

This paper presents three shielded vertical via transition designs applicable in millimeter-wave module packaging from DC up to the V-band. The optimized transition structures were fabricated using a standard low-temperature co-fired ceramic (LTCC) process. The measured scattering parameter results of the back-to-back via transition structures showed an exceptionally wide bandwidth with return losses better than 18 dB up to 50 GHz. The extracted insertion loss values of the single transitions were less than about 0.4 dB at 50 GHz. Moreover, full-wave electromagnetic (EM) simulations demonstrated the high potential of two of these via transitions up to 70 GHz.

Original language	English
Title of host publication	Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006
Subtitle of host publication	Manchester, UK, 11 - 15 Sept. 2006
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	476-479
ISBN (Print)	2-9600551-8-7
DOIs	https://doi.org/10.1109/EMICC.2006.282686
Publication status	Published - 2006
MoE publication type	A4 Article in a conference publication

Keywords

Low-loss
Low-temperature co-fired ceramic (LTCC)
Transition
Wideband

Access to Document

10.1109/EMICC.2006.282686

Cite this

Kangasvieri, T., Halme, J., Vähäkangas, J., & Lahti, M. (2006). Ultra-wideband shielded vertical via transitions from DC up to the V-band. In Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006: Manchester, UK, 11 - 15 Sept. 2006 (pp. 476-479). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/EMICC.2006.282686

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title = "Ultra-wideband shielded vertical via transitions from DC up to the V-band",

abstract = "This paper presents three shielded vertical via transition designs applicable in millimeter-wave module packaging from DC up to the V-band. The optimized transition structures were fabricated using a standard low-temperature co-fired ceramic (LTCC) process. The measured scattering parameter results of the back-to-back via transition structures showed an exceptionally wide bandwidth with return losses better than 18 dB up to 50 GHz. The extracted insertion loss values of the single transitions were less than about 0.4 dB at 50 GHz. Moreover, full-wave electromagnetic (EM) simulations demonstrated the high potential of two of these via transitions up to 70 GHz.",

keywords = "Low-loss, Low-temperature co-fired ceramic (LTCC), Transition, Wideband",

author = "T. Kangasvieri and J. Halme and J. V{\"a}h{\"a}kangas and Markku Lahti",

year = "2006",

doi = "10.1109/EMICC.2006.282686",

language = "English",

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Ultra-wideband shielded vertical via transitions from DC up to the V-band. / Kangasvieri, T.; Halme, J.; Vähäkangas, J. et al.
Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006: Manchester, UK, 11 - 15 Sept. 2006. IEEE Institute of Electrical and Electronic Engineers, 2006. p. 476-479.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Ultra-wideband shielded vertical via transitions from DC up to the V-band

AU - Kangasvieri, T.

AU - Halme, J.

AU - Vähäkangas, J.

AU - Lahti, Markku

PY - 2006

Y1 - 2006

N2 - This paper presents three shielded vertical via transition designs applicable in millimeter-wave module packaging from DC up to the V-band. The optimized transition structures were fabricated using a standard low-temperature co-fired ceramic (LTCC) process. The measured scattering parameter results of the back-to-back via transition structures showed an exceptionally wide bandwidth with return losses better than 18 dB up to 50 GHz. The extracted insertion loss values of the single transitions were less than about 0.4 dB at 50 GHz. Moreover, full-wave electromagnetic (EM) simulations demonstrated the high potential of two of these via transitions up to 70 GHz.

AB - This paper presents three shielded vertical via transition designs applicable in millimeter-wave module packaging from DC up to the V-band. The optimized transition structures were fabricated using a standard low-temperature co-fired ceramic (LTCC) process. The measured scattering parameter results of the back-to-back via transition structures showed an exceptionally wide bandwidth with return losses better than 18 dB up to 50 GHz. The extracted insertion loss values of the single transitions were less than about 0.4 dB at 50 GHz. Moreover, full-wave electromagnetic (EM) simulations demonstrated the high potential of two of these via transitions up to 70 GHz.

KW - Low-loss

KW - Low-temperature co-fired ceramic (LTCC)

KW - Transition

KW - Wideband

U2 - 10.1109/EMICC.2006.282686

DO - 10.1109/EMICC.2006.282686

M3 - Conference article in proceedings

SN - 2-9600551-8-7

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BT - Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Ultra-wideband shielded vertical via transitions from DC up to the V-band

Abstract

Keywords

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