Ultrafast relaxation dynamics in strain-induced quantum dots

J.H.H. Sandmann*, S. Grosse, G. von Plessen, J. Feldmann, G. Hayes, R. Phillips, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

*Corresponding author for this work

    Research output: Contribution to journalArticleScientificpeer-review

    14 Citations (Scopus)

    Abstract

    We perform time-resolved photoluminescence experiments to study carrier relaxation in strain-induced (GaIn)As quantum dots. A sub-picosecond onset of the photoluminescence from the lowest quantum-dot transition after optical excitation of higher-energetic barrier states is observed, which shows that carrier capture into the quantum-dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum-dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

    Original languageEnglish
    Pages (from-to)251-254
    JournalPhysica Status Solidi B: Basic Research
    Volume204
    Issue number1
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

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