Ultrafast relaxation dynamics in strain-induced quantum dots

J. Sandmann (Corresponding Author), G. von Plessen, J. Feldmann, G. Hayes, R. Phillips, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We perform time‐resolved photoluminescence experiments to study carrier relaxation in strain‐induced (GaIn)As quantum dots. A sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot transition after optical excitation of higher‐energetic barrier states is observed, which shows that carrier capture into the quantum‐dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

Original languageEnglish
Pages (from-to)251 - 254
Number of pages4
JournalPhysica Status Solidi B: Basic Research
Volume204
Issue number1
DOIs
Publication statusPublished - 1997
MoE publication typeA1 Journal article-refereed

Fingerprint

Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
Photoexcitation
optical transition
Relaxation time
Ground state
Carrier concentration
relaxation time
life (durability)
ground state
decay
excitation
Experiments

Cite this

Sandmann, J. ; Plessen, G. von ; Feldmann, J. ; Hayes, G. ; Phillips, R. ; Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni. / Ultrafast relaxation dynamics in strain-induced quantum dots. In: Physica Status Solidi B: Basic Research. 1997 ; Vol. 204, No. 1. pp. 251 - 254.
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Sandmann, J, Plessen, GV, Feldmann, J, Hayes, G, Phillips, R, Lipsanen, H, Sopanen, M & Ahopelto, J 1997, 'Ultrafast relaxation dynamics in strain-induced quantum dots', Physica Status Solidi B: Basic Research, vol. 204, no. 1, pp. 251 - 254. https://doi.org/10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

Ultrafast relaxation dynamics in strain-induced quantum dots. / Sandmann, J. (Corresponding Author); Plessen, G. von; Feldmann, J.; Hayes, G.; Phillips, R.; Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

In: Physica Status Solidi B: Basic Research, Vol. 204, No. 1, 1997, p. 251 - 254.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Ultrafast relaxation dynamics in strain-induced quantum dots

AU - Sandmann, J.

AU - Plessen, G. von

AU - Feldmann, J.

AU - Hayes, G.

AU - Phillips, R.

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

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AB - We perform time‐resolved photoluminescence experiments to study carrier relaxation in strain‐induced (GaIn)As quantum dots. A sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot transition after optical excitation of higher‐energetic barrier states is observed, which shows that carrier capture into the quantum‐dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

U2 - 10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

DO - 10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

M3 - Article

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SP - 251

EP - 254

JO - Physica Status Solidi B: Basic Solid State Physics

JF - Physica Status Solidi B: Basic Solid State Physics

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