Ultrafast relaxation dynamics in strain-induced quantum dots

J. Sandmann (Corresponding Author), G. von Plessen, J. Feldmann, G. Hayes, R. Phillips, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

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    13 Citations (Scopus)

    Abstract

    We perform time‐resolved photoluminescence experiments to study carrier relaxation in strain‐induced (GaIn)As quantum dots. A sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot transition after optical excitation of higher‐energetic barrier states is observed, which shows that carrier capture into the quantum‐dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

    Original languageEnglish
    Pages (from-to)251 - 254
    Number of pages4
    JournalPhysica Status Solidi B: Basic Research
    Volume204
    Issue number1
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

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  • Cite this

    Sandmann, J., Plessen, G. V., Feldmann, J., Hayes, G., Phillips, R., Lipsanen, H., Sopanen, M., & Ahopelto, J. (1997). Ultrafast relaxation dynamics in strain-induced quantum dots. Physica Status Solidi B: Basic Research, 204(1), 251 - 254. https://doi.org/10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A