Abstract
We perform time-resolved photoluminescence experiments to study carrier relaxation in strain-induced (GaIn)As quantum dots. A sub-picosecond onset of the photoluminescence from the lowest quantum-dot transition after optical excitation of higher-energetic barrier states is observed, which shows that carrier capture into the quantum-dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum-dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.
Original language | English |
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Pages (from-to) | 251-254 |
Journal | Physica Status Solidi B: Basic Research |
Volume | 204 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1997 |
MoE publication type | A1 Journal article-refereed |