Ultrafast relaxation dynamics in strain-induced quantum dots

J. Sandmann (Corresponding Author), G. von Plessen, J. Feldmann, G. Hayes, R. Phillips, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    13 Citations (Scopus)

    Abstract

    We perform time‐resolved photoluminescence experiments to study carrier relaxation in strain‐induced (GaIn)As quantum dots. A sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot transition after optical excitation of higher‐energetic barrier states is observed, which shows that carrier capture into the quantum‐dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

    Original languageEnglish
    Pages (from-to)251 - 254
    Number of pages4
    JournalPhysica Status Solidi B: Basic Research
    Volume204
    Issue number1
    DOIs
    Publication statusPublished - 1997
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Semiconductor quantum dots
    Photoluminescence
    quantum dots
    photoluminescence
    Photoexcitation
    optical transition
    Relaxation time
    Ground state
    Carrier concentration
    relaxation time
    life (durability)
    ground state
    decay
    excitation
    Experiments

    Cite this

    Sandmann, J. ; Plessen, G. von ; Feldmann, J. ; Hayes, G. ; Phillips, R. ; Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni. / Ultrafast relaxation dynamics in strain-induced quantum dots. In: Physica Status Solidi B: Basic Research. 1997 ; Vol. 204, No. 1. pp. 251 - 254.
    @article{199e96e128454cdabd5162c91b56fa4d,
    title = "Ultrafast relaxation dynamics in strain-induced quantum dots",
    abstract = "We perform time‐resolved photoluminescence experiments to study carrier relaxation in strain‐induced (GaIn)As quantum dots. A sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot transition after optical excitation of higher‐energetic barrier states is observed, which shows that carrier capture into the quantum‐dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.",
    author = "J. Sandmann and Plessen, {G. von} and J. Feldmann and G. Hayes and R. Phillips and Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",
    year = "1997",
    doi = "10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A",
    language = "English",
    volume = "204",
    pages = "251 -- 254",
    journal = "Physica Status Solidi B: Basic Solid State Physics",
    issn = "0370-1972",
    publisher = "Wiley-VCH Verlag",
    number = "1",

    }

    Sandmann, J, Plessen, GV, Feldmann, J, Hayes, G, Phillips, R, Lipsanen, H, Sopanen, M & Ahopelto, J 1997, 'Ultrafast relaxation dynamics in strain-induced quantum dots', Physica Status Solidi B: Basic Research, vol. 204, no. 1, pp. 251 - 254. https://doi.org/10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

    Ultrafast relaxation dynamics in strain-induced quantum dots. / Sandmann, J. (Corresponding Author); Plessen, G. von; Feldmann, J.; Hayes, G.; Phillips, R.; Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

    In: Physica Status Solidi B: Basic Research, Vol. 204, No. 1, 1997, p. 251 - 254.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Ultrafast relaxation dynamics in strain-induced quantum dots

    AU - Sandmann, J.

    AU - Plessen, G. von

    AU - Feldmann, J.

    AU - Hayes, G.

    AU - Phillips, R.

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Ahopelto, Jouni

    PY - 1997

    Y1 - 1997

    N2 - We perform time‐resolved photoluminescence experiments to study carrier relaxation in strain‐induced (GaIn)As quantum dots. A sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot transition after optical excitation of higher‐energetic barrier states is observed, which shows that carrier capture into the quantum‐dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

    AB - We perform time‐resolved photoluminescence experiments to study carrier relaxation in strain‐induced (GaIn)As quantum dots. A sub‐picosecond onset of the photoluminescence from the lowest quantum‐dot transition after optical excitation of higher‐energetic barrier states is observed, which shows that carrier capture into the quantum‐dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum‐dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

    U2 - 10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

    DO - 10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

    M3 - Article

    VL - 204

    SP - 251

    EP - 254

    JO - Physica Status Solidi B: Basic Solid State Physics

    JF - Physica Status Solidi B: Basic Solid State Physics

    SN - 0370-1972

    IS - 1

    ER -