Ultrafast relaxation dynamics in strain-induced quantum dots

J.H.H. Sandmann; S. Grosse; G. von Plessen; J. Feldmann; G. Hayes; R. Phillips; Harri Lipsanen; Markku Sopanen; Jouni Ahopelto

doi:10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

Ultrafast relaxation dynamics in strain-induced quantum dots

J.H.H. Sandmann^*, S. Grosse, G. von Plessen, J. Feldmann, G. Hayes, R. Phillips, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

14 Citations (Scopus)

Abstract

We perform time-resolved photoluminescence experiments to study carrier relaxation in strain-induced (GaIn)As quantum dots. A sub-picosecond onset of the photoluminescence from the lowest quantum-dot transition after optical excitation of higher-energetic barrier states is observed, which shows that carrier capture into the quantum-dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum-dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

Original language	English
Pages (from-to)	251-254
Journal	Physica Status Solidi B: Basic Research
Volume	204
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A
Publication status	Published - 1997
MoE publication type	A1 Journal article-refereed

Access to Document

10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

Cite this

@article{199e96e128454cdabd5162c91b56fa4d,

title = "Ultrafast relaxation dynamics in strain-induced quantum dots",

abstract = "We perform time-resolved photoluminescence experiments to study carrier relaxation in strain-induced (GaIn)As quantum dots. A sub-picosecond onset of the photoluminescence from the lowest quantum-dot transition after optical excitation of higher-energetic barrier states is observed, which shows that carrier capture into the quantum-dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum-dot transition and the interlevel relaxation time are extracted from the photoluminescence decay. ",

author = "J.H.H. Sandmann and S. Grosse and \{von Plessen\}, G. and J. Feldmann and G. Hayes and R. Phillips and Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",

year = "1997",

doi = "10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A",

language = "English",

volume = "204",

pages = "251--254",

journal = "Physica Status Solidi B: Basic Research",

issn = "0370-1972",

publisher = "Wiley",

number = "1",

}

TY - JOUR

T1 - Ultrafast relaxation dynamics in strain-induced quantum dots

AU - Sandmann, J.H.H.

AU - Grosse, S.

AU - von Plessen, G.

AU - Feldmann, J.

AU - Hayes, G.

AU - Phillips, R.

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

PY - 1997

Y1 - 1997

N2 - We perform time-resolved photoluminescence experiments to study carrier relaxation in strain-induced (GaIn)As quantum dots. A sub-picosecond onset of the photoluminescence from the lowest quantum-dot transition after optical excitation of higher-energetic barrier states is observed, which shows that carrier capture into the quantum-dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum-dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

AB - We perform time-resolved photoluminescence experiments to study carrier relaxation in strain-induced (GaIn)As quantum dots. A sub-picosecond onset of the photoluminescence from the lowest quantum-dot transition after optical excitation of higher-energetic barrier states is observed, which shows that carrier capture into the quantum-dot ground state can be extremely fast at high carrier densities. The recombination lifetime of the lowest quantum-dot transition and the interlevel relaxation time are extracted from the photoluminescence decay.

U2 - 10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

DO - 10.1002/1521-3951(199711)204:1<251::AID-PSSB251>3.0.CO;2-A

M3 - Article

SN - 0370-1972

VL - 204

SP - 251

EP - 254

JO - Physica Status Solidi B: Basic Research

JF - Physica Status Solidi B: Basic Research

IS - 1

ER -

Ultrafast relaxation dynamics in strain-induced quantum dots

Abstract

Access to Document

Fingerprint

Cite this