Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Pekka Laukkanen (Corresponding Author), Marko P.J. Punkkinen, Jouko Lång, Marjukka Tuominen, Mikhail Kuzmin, Veikko Tuominen, Johnny Dahl, Johan Adell, Janusz Sadowski, Janusz Kanski, Ville Polojärvi, Janne Pakarinen, Kalevi Kokko, Mircea Guina, Markus Pessa, Juhani Väyrynen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
Original languageEnglish
Article number231908
JournalApplied Physics Letters
Volume98
Issue number23
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Keywords

  • ab initio calculations
  • adsorption
  • amorphous state
  • catalysts
  • desorption
  • heat treatment
  • low energy electron diffraction
  • metallic thin films
  • photoelectron spectra
  • surface composition
  • tin

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  • Cite this

    Laukkanen, P., Punkkinen, M. P. J., Lång, J., Tuominen, M., Kuzmin, M., Tuominen, V., Dahl, J., Adell, J., Sadowski, J., Kanski, J., Polojärvi, V., Pakarinen, J., Kokko, K., Guina, M., Pessa, M., & Väyrynen, J. (2011). Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides. Applied Physics Letters, 98(23), [231908]. https://doi.org/10.1063/1.3596702