Abstract
| Original language | English |
|---|---|
| Article number | 231908 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2011 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- ab initio calculations
- adsorption
- amorphous state
- catalysts
- desorption
- heat treatment
- low energy electron diffraction
- metallic thin films
- photoelectron spectra
- surface composition
- tin
Cite this
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Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides. / Laukkanen, Pekka (Corresponding Author); Punkkinen, Marko P.J.; Lång, Jouko; Tuominen, Marjukka; Kuzmin, Mikhail; Tuominen, Veikko; Dahl, Johnny; Adell, Johan; Sadowski, Janusz; Kanski, Janusz; Polojärvi, Ville; Pakarinen, Janne; Kokko, Kalevi; Guina, Mircea; Pessa, Markus; Väyrynen, Juhani.
In: Applied Physics Letters, Vol. 98, No. 23, 231908, 2011.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates
T2 - A catalyst for removal of amorphous surface oxides
AU - Laukkanen, Pekka
AU - Punkkinen, Marko P.J.
AU - Lång, Jouko
AU - Tuominen, Marjukka
AU - Kuzmin, Mikhail
AU - Tuominen, Veikko
AU - Dahl, Johnny
AU - Adell, Johan
AU - Sadowski, Janusz
AU - Kanski, Janusz
AU - Polojärvi, Ville
AU - Pakarinen, Janne
AU - Kokko, Kalevi
AU - Guina, Mircea
AU - Pessa, Markus
AU - Väyrynen, Juhani
PY - 2011
Y1 - 2011
N2 - Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
AB - Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
KW - ab initio calculations
KW - adsorption
KW - amorphous state
KW - catalysts
KW - desorption
KW - heat treatment
KW - low energy electron diffraction
KW - metallic thin films
KW - photoelectron spectra
KW - surface composition
KW - tin
U2 - 10.1063/1.3596702
DO - 10.1063/1.3596702
M3 - Article
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
M1 - 231908
ER -