Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates

A catalyst for removal of amorphous surface oxides

Pekka Laukkanen (Corresponding Author), Marko P.J. Punkkinen, Jouko Lång, Marjukka Tuominen, Mikhail Kuzmin, Veikko Tuominen, Johnny Dahl, Johan Adell, Janusz Sadowski, Janusz Kanski, Ville Polojärvi, Janne Pakarinen, Kalevi Kokko, Mircea Guina, Markus Pessa, Juhani Väyrynen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
Original languageEnglish
Article number231908
JournalApplied Physics Letters
Volume98
Issue number23
DOIs
Publication statusPublished - 2011
MoE publication typeA1 Journal article-refereed

Fingerprint

catalysts
oxides
air
electron diffraction
desorption
photoelectron spectroscopy
adsorption
heating
oxygen
spectroscopy
energy

Keywords

  • ab initio calculations
  • adsorption
  • amorphous state
  • catalysts
  • desorption
  • heat treatment
  • low energy electron diffraction
  • metallic thin films
  • photoelectron spectra
  • surface composition
  • tin

Cite this

Laukkanen, P., Punkkinen, M. P. J., Lång, J., Tuominen, M., Kuzmin, M., Tuominen, V., ... Väyrynen, J. (2011). Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides. Applied Physics Letters, 98(23), [231908]. https://doi.org/10.1063/1.3596702
Laukkanen, Pekka ; Punkkinen, Marko P.J. ; Lång, Jouko ; Tuominen, Marjukka ; Kuzmin, Mikhail ; Tuominen, Veikko ; Dahl, Johnny ; Adell, Johan ; Sadowski, Janusz ; Kanski, Janusz ; Polojärvi, Ville ; Pakarinen, Janne ; Kokko, Kalevi ; Guina, Mircea ; Pessa, Markus ; Väyrynen, Juhani. / Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides. In: Applied Physics Letters. 2011 ; Vol. 98, No. 23.
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title = "Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides",
abstract = "Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.",
keywords = "ab initio calculations, adsorption, amorphous state, catalysts, desorption, heat treatment, low energy electron diffraction, metallic thin films, photoelectron spectra, surface composition, tin",
author = "Pekka Laukkanen and Punkkinen, {Marko P.J.} and Jouko L{\aa}ng and Marjukka Tuominen and Mikhail Kuzmin and Veikko Tuominen and Johnny Dahl and Johan Adell and Janusz Sadowski and Janusz Kanski and Ville Poloj{\"a}rvi and Janne Pakarinen and Kalevi Kokko and Mircea Guina and Markus Pessa and Juhani V{\"a}yrynen",
year = "2011",
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language = "English",
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journal = "Applied Physics Letters",
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Laukkanen, P, Punkkinen, MPJ, Lång, J, Tuominen, M, Kuzmin, M, Tuominen, V, Dahl, J, Adell, J, Sadowski, J, Kanski, J, Polojärvi, V, Pakarinen, J, Kokko, K, Guina, M, Pessa, M & Väyrynen, J 2011, 'Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides', Applied Physics Letters, vol. 98, no. 23, 231908. https://doi.org/10.1063/1.3596702

Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates : A catalyst for removal of amorphous surface oxides. / Laukkanen, Pekka (Corresponding Author); Punkkinen, Marko P.J.; Lång, Jouko; Tuominen, Marjukka; Kuzmin, Mikhail; Tuominen, Veikko; Dahl, Johnny; Adell, Johan; Sadowski, Janusz; Kanski, Janusz; Polojärvi, Ville; Pakarinen, Janne; Kokko, Kalevi; Guina, Mircea; Pessa, Markus; Väyrynen, Juhani.

In: Applied Physics Letters, Vol. 98, No. 23, 231908, 2011.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates

T2 - A catalyst for removal of amorphous surface oxides

AU - Laukkanen, Pekka

AU - Punkkinen, Marko P.J.

AU - Lång, Jouko

AU - Tuominen, Marjukka

AU - Kuzmin, Mikhail

AU - Tuominen, Veikko

AU - Dahl, Johnny

AU - Adell, Johan

AU - Sadowski, Janusz

AU - Kanski, Janusz

AU - Polojärvi, Ville

AU - Pakarinen, Janne

AU - Kokko, Kalevi

AU - Guina, Mircea

AU - Pessa, Markus

AU - Väyrynen, Juhani

PY - 2011

Y1 - 2011

N2 - Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.

AB - Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.

KW - ab initio calculations

KW - adsorption

KW - amorphous state

KW - catalysts

KW - desorption

KW - heat treatment

KW - low energy electron diffraction

KW - metallic thin films

KW - photoelectron spectra

KW - surface composition

KW - tin

U2 - 10.1063/1.3596702

DO - 10.1063/1.3596702

M3 - Article

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 231908

ER -