Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors

Henrik G. O. Sandberg (Corresponding Author), Gitti L. Frey (Corresponding Author), Maxim N. Shkunov (Corresponding Author), Henning Sirringhaus, Richard H. Friend, Martin Meedom Nielsen, Christian Kumpf

Research output: Contribution to journalArticleScientificpeer-review

145 Citations (Scopus)

Abstract

Ultrathin films of regioregular poly(3-hexyl thiophene) (RR-P3HT) were deposited through a dip-coating technique and utilized as the semiconducting film in field-effect transistors (FETs). Proper selection of the substrate and solution concentration enabled the growth of a monolayer-thick RR-P3HT film. Atomic force microscopy (AFM), U-V-vis absorption spectroscopy, X-ray reflectivity, and grazing incidence diffraction were used to study the growth mechanism, thickness and orientation of self-organized monolayer thick RR-P3HT films on SiO2 surfaces. Films were found to adopt a Stranski-Krastanov-type growth mode with formation of a very stable first monolayer. X-ray measurements show that the direction of pi-stacking in the films (the (010) direction) is parallel to the substrate, which is the preferred orientation for high field-effect carrier mobilities. The field-effect mobilities in all ultrathin films prepared in this study are lower than those obtained for thicker films spun on similar substrates. However, monolayer FETs provide a direct experimental system to study the charge transport at the charge accumulation layer.
Original languageEnglish
Pages (from-to)10176-10182
JournalLangmuir
Volume18
Issue number26
DOIs
Publication statusPublished - 1 Dec 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Thiophenes
Thiophene
Field effect transistors
thiophenes
Monolayers
field effect transistors
Ultrathin films
Substrates
Semiconducting films
X ray absorption spectroscopy
Coating techniques
Carrier mobility
Thick films
semiconducting films
Charge transfer
Atomic force microscopy
Diffraction
carrier mobility
grazing incidence
X rays

Keywords

  • CHARGE,CIRCUITS,CONJUGATED POLYMERS,CRYSTALS,HIGH,HIGH-MOBILITY,LANGMUIR-BLODGETT-FILMS,OLIGOTHIOPHENES,RESOLUTION

Cite this

Sandberg, H. G. O., Frey, G. L., Shkunov, M. N., Sirringhaus, H., Friend, R. H., Nielsen, M. M., & Kumpf, C. (2002). Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors. Langmuir, 18(26), 10176-10182. https://doi.org/10.1021/la0261444
Sandberg, Henrik G. O. ; Frey, Gitti L. ; Shkunov, Maxim N. ; Sirringhaus, Henning ; Friend, Richard H. ; Nielsen, Martin Meedom ; Kumpf, Christian. / Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors. In: Langmuir. 2002 ; Vol. 18, No. 26. pp. 10176-10182.
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Sandberg, HGO, Frey, GL, Shkunov, MN, Sirringhaus, H, Friend, RH, Nielsen, MM & Kumpf, C 2002, 'Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors', Langmuir, vol. 18, no. 26, pp. 10176-10182. https://doi.org/10.1021/la0261444

Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors. / Sandberg, Henrik G. O. (Corresponding Author); Frey, Gitti L. (Corresponding Author); Shkunov, Maxim N. (Corresponding Author); Sirringhaus, Henning; Friend, Richard H.; Nielsen, Martin Meedom; Kumpf, Christian.

In: Langmuir, Vol. 18, No. 26, 01.12.2002, p. 10176-10182.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors

AU - Sandberg, Henrik G. O.

AU - Frey, Gitti L.

AU - Shkunov, Maxim N.

AU - Sirringhaus, Henning

AU - Friend, Richard H.

AU - Nielsen, Martin Meedom

AU - Kumpf, Christian

PY - 2002/12/1

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N2 - Ultrathin films of regioregular poly(3-hexyl thiophene) (RR-P3HT) were deposited through a dip-coating technique and utilized as the semiconducting film in field-effect transistors (FETs). Proper selection of the substrate and solution concentration enabled the growth of a monolayer-thick RR-P3HT film. Atomic force microscopy (AFM), U-V-vis absorption spectroscopy, X-ray reflectivity, and grazing incidence diffraction were used to study the growth mechanism, thickness and orientation of self-organized monolayer thick RR-P3HT films on SiO2 surfaces. Films were found to adopt a Stranski-Krastanov-type growth mode with formation of a very stable first monolayer. X-ray measurements show that the direction of pi-stacking in the films (the (010) direction) is parallel to the substrate, which is the preferred orientation for high field-effect carrier mobilities. The field-effect mobilities in all ultrathin films prepared in this study are lower than those obtained for thicker films spun on similar substrates. However, monolayer FETs provide a direct experimental system to study the charge transport at the charge accumulation layer.

AB - Ultrathin films of regioregular poly(3-hexyl thiophene) (RR-P3HT) were deposited through a dip-coating technique and utilized as the semiconducting film in field-effect transistors (FETs). Proper selection of the substrate and solution concentration enabled the growth of a monolayer-thick RR-P3HT film. Atomic force microscopy (AFM), U-V-vis absorption spectroscopy, X-ray reflectivity, and grazing incidence diffraction were used to study the growth mechanism, thickness and orientation of self-organized monolayer thick RR-P3HT films on SiO2 surfaces. Films were found to adopt a Stranski-Krastanov-type growth mode with formation of a very stable first monolayer. X-ray measurements show that the direction of pi-stacking in the films (the (010) direction) is parallel to the substrate, which is the preferred orientation for high field-effect carrier mobilities. The field-effect mobilities in all ultrathin films prepared in this study are lower than those obtained for thicker films spun on similar substrates. However, monolayer FETs provide a direct experimental system to study the charge transport at the charge accumulation layer.

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M3 - Article

VL - 18

SP - 10176

EP - 10182

JO - Langmuir

JF - Langmuir

SN - 0743-7463

IS - 26

ER -

Sandberg HGO, Frey GL, Shkunov MN, Sirringhaus H, Friend RH, Nielsen MM et al. Ultrathin regioregular poly(3-hexyl thiophene) field-effect transistors. Langmuir. 2002 Dec 1;18(26):10176-10182. https://doi.org/10.1021/la0261444